Samsung Electronics Co., Ltd.

Industry-university Cooperation Foundation

Fushan Li

Young-Ho Kim

Tae-Whan Kim

Jae-Hun Jung

A nonvolatile organic bistable memory device includes a substrate, a lower electrode disposed on the substrate, a lower charge injection layer disposed on the lower electrode, an insulating polymer layer including nanoparticles disposed on the lower charge injection layer, an upper charge injection layer disposed on the insulating polymer layer, and an upper electrode disposed on the upper charge injection layer. The lower and upper charge injection layers each include fullerenes and/or carbon nanotubes.

Growing community of inventors

Seoul, South Korea

Fushan Li