Mitsubishi Denki Kabushiki Kaisha

Shimadzu Corporation

Mitsubishi Denki Kabushiki Kaihsa

Fusaoki Uchikawa

Shigeru Matsuno

Akira Yamada

Hisao Watarai

Hideharu Tanaka

Shinichi Kinouchi

Shoji Miyashita

Mutsuo Sekiya

Takehiko Sato

Kenji Nomura

Tatsushi Kawamoto

Toshio Umemura

Chisako Maeda

Naoki Yoshioka

Mitsushi Kawao

Toshio Kobayashi

Takayuki Nagai

Yoshio Kubo

Hiroko Higuma

Kunihiko Egawa

Yasufumi Ohata

Hisashi Shiota

Hiroaki Urushibata

Masao Morita

Shusou Wadaka

Koichiro Misu

Tetsuo Mitani

Toshihisa Honda

Takeyuki Maegawa

Kozo Shimamoto

Shouichi Yokoyama

Morihisa Takeuchi

Kimio Momiyama

Kunihiko Miyao

Kenji Yoshida

Minoru Hashimoto

Takeharu Kuroiwa

Tsuyoshi Horikawa

Kiyohide Sakai

Takaaki Kawahara

Masayoshi Tarutani

Sadayuki Matsumoto

Mikio Yamamuka

Masakazu Takabayashi

Takahide Ishikawa

Tsutomu Nagatsuka

Junichiro Hoshizaki

Hajime Takeya

Kiichi Yoshiara

Koji Ibata

Ayumi Nozaki

Shin-ichi Kinouchi

Fumio Fujiwara

Mutuo Sekiya

Matsuo Sekiya

Takashi Higaki

Sigeru Matsuno

In a liquid substance supply device, a three port two valve directional control valve is provided in a transfer line, and a substance container and the transfer line are connected together by a four port three valve directional control valve in such a way that the four port three valve directional control valve and the substance container can be removed from the transfer line as a unit. Furthermore, in a vaporizer, an orifice member is provided to surround the end portion of an internal conduit in which flows a mixture substance consisting of a gas and a liquid substance mixed therewith, and gas for atomization is spouted into a vaporization chamber through a gap defined between the internal conduit and the orifice member. Yet further, the temperature of a vaporization surface in the vaporization chamber can be controlled independently in correspondence with the nature of the liquid substance.

Liquid substance supply device for vaporizing system, vaporizer, vaporization performance appraisal method

Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method

A multilayer electrode battery which restrains temperature rise produced by an internal short circuit and has a compact size and a large battery capacity. The battery is a multilayer electrode battery which uses an electrode formed by providing positive temperature coefficient characteristics to at least one of an active material and an electronic conductive material in contact with the active material, and a collector of at least one of a positive electrode and a negative electrode, and which has a plurality of layers of multilayer electrode bodies.

Lithium ion secondary battery

There is provided a film bulk acoustic wave device comprising: a silicon substrate , a dielectric film including a silicon nitride formed on the substrate and a silicon oxide on the silicon nitride , a bottom electrode formed on the dielectric film , a piezoelectric film formed on the bottom electrode , and a top electrode formed on the piezoelectric film , wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate which is opposite to a region including a part where the top electrode exists is removed from the bottom surface of the silicon substrate to a boundary surface with the silicon nitride

Film bulk acoustic wave device

A waveguide grating device controlling Bragg wavelength after manufacture of the device includes an optical waveguide on a substrate. A variable stress is applied to a waveguide grating in part of the waveguide to bend at least the portion of the substrate including the waveguide grating, changing the Bragg wavelength.

Waveguide grating device and method of controlling Bragg wavelength of waveguide grating

A CVD source material which can be stably tramsported to a reactor in order to form a platinum metal, Cu, or an oxide of them as an electrode. An organometallic compound including a platinum metal (Ru, Pt, Ir, Pd, Os, Rh, Re) or Cu, is dissolved into tetrahydrofuran or a solvent containing tetrahydrofuran to obtain the CVD source material. In this material, the amount of moisture is preferably not more than 200 ppm. A film is formed by CVD employing this source material, the material is supplied stably, and the properties of the electrode film are improved. The capacitance property of the film is improved. Wiring of an electrical device may be formed by employing source material.

CVD source material for forming an electrode, and electrode and wiring film for capacitor formed therefrom

A process of preparation capable of easily preparing cathode materials having a homogeneous composition in a good mass productivity, a cathode material obtained by this process, and a secondary lithium ion battery using the cathode material. Aqueous solutions of each of a lithium salt, a transition metal salt, and a complexing agent are prepared and mixed in a stoichiometric ratio of a cathode material, and therefrom water is removed by spray-drying to give a precursor which is then sintered. High performance secondary lithium ion batteries are obtained by using the obtained cathode material in the positive electrode.

Cathode materials, process for the preparation thereof and secondary lithium ion battery using the cathode materials

A process for manufacturing a plurality of dielectric thin film devices by forming a lower layer on a substrate, coating a dielectric thin film on the lower layer, forming the dielectric thin film into a plurality of predetermined shapes, and, if desired, forming an upper structure on each of the plurality of dielectric thin films, wherein the dielectric thin film is divisionally formed on the lower layer by using a mask after the lower layer is formed to have a stress in a direction opposite to that of the dielectric thin film, or alternatively the dielectric thin film is divided into predetermined shapes after being formed.

Dielectric thin film element and process for manufacturing the same

An electrode in which an active material or , an electron conducting material or a current collector or has PTC characteristics is used as at least one of positive and negative electrodes and

Electrode having PTC characteristic

A vaporizing device for chemical vapor deposition (CVD) source materials includes a vaporizer for vaporizing introduced CVD source materials by heating, a spray nozzle of which an end portion is fixedly attached to the vaporizer for spraying the CVD source materials into the vaporizer, a cooling mechanism for cooling the spray nozzle, and a heat conduction restrictor attached to the end portion, proximate of the end portion, or to the vaporizer. Generation of non-vaporized residues and particles is decreased, improving productivity owing to prolongation of continuous operation time of the apparatus and a decrease in film defects.

Vaporizing device for CVD source materials and CVD apparatus employing the same

A piezoelectric thin film device which is composed mainly of a substrate, a piezoelectric thin film formed on the substrate, and thin film electrodes formed on both the upper and lower surfaces of the thin film. The thin film is resonated by applying an AC voltage across the electrodes. A substrate removed section is formed by partially or entirely removing the substrate below the thin film and opened to both the front and rear surfaces of the substrate through openings so as to relieve the pressure variation in the substrate removed section below a resonant structure.

Piezoelectric thin film device

A capacitor comprising a metal oxide dielectric film deposited by chemical vapor deposition includes dissolving at least one organometallic CVD precursor compound in a solvent system including tetrahydrofuran to form a liquid solution; vaporizing the liquid solution including the at least one organometallic compound; and forming the metal oxide dielectric thin film by depositing at least a portion of the at least one organometallic compound from the vaporized solution on a substrate.

Capacitor

A source material for chemical vapor deposition of a lead zirconate titanate ferroelectric thin film, the source material including a solution of organometallic compounds containing lead, zirconium, and titanium dissolved in solvent including tetrahydrofuran.

Chemical vapor deposition source for depositing lead zirconate titanate film

Growing community of inventors

Tokyo, Japan

Fusaoki Uchikawa