Fuji Photo Film Company, Limited

Fujifilm Corporation

Fusao Yamanaka

Makoto Nagao

Yoji Okazaki

Akira Nahara

Teruhiko Kuramachi

Kazuhiko Nagano

Kunihiko Sano

Chiaki Goto

Kazuhiko Morita

Yasuyuki Yamada

Hiroshi Hashimoto

Tsutomu Okita

Toshiaki Fukunaga

Yasuo Nishikawa

Jun Nakagawa

Mikihiko Kato

Toshio Kawamata

Shinichi Shimotsu

Yuichi Teramura

Toshiaki Kuniyasu

Takao Ohya

In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350&#x2dc;450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350&#x2dc;450 nm, optical components whose organic volatile gas generation measured by GC/MS is 10 &#x3bc;g/g or less at 150&#xb0; C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 100 &#x3bc;g/g or less at 150&#xb0; C.

Laser module

A laser module includes a semiconductor laser that emits laser light within a wavelength range of 350 to 450 nm, and hermetically sealing members, in which the semiconductor is sealed. The amount of organic adhesive utilized within the volume of the sealed sealing members is 1.0 g/ml or less, thereby causing a saturation concentration of outgas components generated from the adhesive to be less than 1000 ppm following a deaerating process. At least one optical component (e.g., a collimating lens) is adhesively fixed to a fixing member (e.g., a collimating lens holder) by inserting an adhesive composition including an alicyclic epoxy compound, a compound having an oxytanyl group, and a catalytic amount of an onium salt photoreaction initiator therebetween at an adhesive thickness of 0.05 &#x3bc;m or greater and 5 &#x3bc;m or less. Thereafter, the adhesive composition is cured by an activated energy beam to fix the optical component to the fixing member.

Laser module and method of manufacture thereof

(Problem to be solved) To provide a laser beam synthesizing apparatus which is small in size and high in output power. (Means for solving the problem) A convergent angle transforming optical systemis disposed further upstream of the upstream-most position Pa in the positions where the optical axes of beam bundles La, Lb, Lc . . . which are radiated from a plurality of semiconductor lasersA,B,C . . . and converged in the fast axis view by a converging/dispersion lensintersect each other in the fast axis view, and the whole beam bundle made up of the beam bundles La, Lb, Lc . . . passed through the converging/dispersion lensis converged in the fast axis view by the convergent angle transforming optical systemso that the angle of convergence of the whole beam bundle is made smaller in the fast axis view, and introduced into the coreof an optical fiber

Apparatus for synthesizing laser beams

In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350&#x2dc;450 nm, generation of organic volatile gas is suppressed in the container and life of the module is prolonged. In a laser module comprising a hermetically sealed container having inside a semiconductor laser device whose emission wavelength is 350&#x2dc;450 nm and whose life is 5500 hours or more, optical components whose organic volatile gas generation measured by GC/MS is 10 &#x3bc;g/g or less at 150&#xb0; C. are positioned in the container. In addition, as an organic adhesive to fix the optical components such as a collimating lens is used an organic adhesive whose organic volatile gas generation measured by GC/MS is 300 &#x3bc;g/g or less at 15&#xb0; C.

In a laser module, a laser beam which is emitted from a laser element is focused by a condensing optical system and caused to enter an incidence end of an optical fiber. A laser device is provided with a plurality of these laser modules. Emission end portions of the optical fibers are bundled to form a laser emission portion. A thickness of cladding h of each optical fiber is set to a value calculated in accordance with the following equation: As a result, it is possible to emit a laser-beam with a high intensity that is required for functionality as a laser light source, for the purpose of raising resolution of an exposure apparatus.

Laser device and exposure device using the same

In a method for producing a laser element, a brazing material is placed between a nitride-based semiconductor laser bar and a fixation surface of a heat sink, where the brazing material contains gold and one of tin and silicon as main components, the nitride-based semiconductor laser bar has at least three light-emission points formed on a substrate, the heat sink is made of copper or copper alloy, and the fixation surface has a predetermined shape. Then, the nitride-based semiconductor laser bar is fixed to the fixation surface of the heat sink by melting and solidifying the brazing material while pressing the nitride-based semiconductor laser bar toward the heat sink with a tool having a shape corresponding to the predetermined shape of the fixation surface.

Laser element, method of producing the laser element, and a laser module employing the laser element

In a disclosed laser module, a usage amount of organic adhesive is set to no more than 1.0 g/ml. Thus, an equilibrium density of outgas components from the adhesive after an air removal treatment is less than 1000 ppm. In another laser module, a heat sink at which a semiconductor laser element is adhered on a submount, an electrode terminal wire-connected with the laser element, a photodiode wire-connected with the electrode terminal, and a zeolite adsorbent are fixedly provided on a stem. These are ring-welded in a container in a dry air atmosphere (80% nitrogen, 20% oxygen). In still another laser module, sixteen multiplexed lasers are disposed in a container. The container is connected with an air circulation apparatus, which is provided with a filter for removing contaminants, a rotary pump for circulating inert gas, and a valve for controlling replenishment of the gas.

Laser module and production process thereof

In a laser apparatus, a plurality of semiconductor laser elements respectively emit laser beams; a multimode optical fiber has a light-entrance end and a light-emission end; an optical condensing system collects the laser beams emitted from the plurality of semiconductor laser elements, and couples the collected laser beams to the light-entrance end of the multimode optical fiber; and a protection member is arranged at the light-emission end of the multimode optical fiber, protects the light-emission end from the atmosphere, and has a light-emission window located at at least a predetermined distance from the light-emission end.

Laser apparatus having protection member at light-emission end of multimode optical fiber

A semiconductor laser element includes: a stack of layers having resonator facets; and at least one protection layer formed on at least one of the resonator facets. Each of the at least one protection layer includes at least first, second, and third sublayers. The first sublayer is formed nearest to the stack among the at least first, second, and third sublayers, and made of a material not containing oxygen (or nitrogen) as a constituent element. The second sublayer is made of an oxide (or nitride) produced by oxidizing (or nitriding) a portion of the first sublayer. The third sublayer is formed farthest from the stack among the at least first, second, and third sublayers, and made of an oxide (or nitride). The thickness dof the second sublayer and the total thickness dof the first and second sublayers satisfy a relationship, 0.1&#x2266;d/d&#x2266;0.9.

Semiconductor laser element having end-facet protection layer which includes unoxidized or unnitrided first sublayer formed on end facet and second sublayer produced by oxidizing or nitriding the surface of the first sublayer

In a laser light multiplexing apparatus: a collimating optical system collimates light beams emitted from semiconductor lasers so that the slow axes of the light beams become coplanar, and optical axes of the light beams become parallel to each other; a light beam rearrangement optical system constituted by prisms respectively arranged in correspondence with the light beams rearranges the light beams in such a manner that directions of the fast axes of the light beams are changed at different locations along a direction in which the light beams propagate, and the fast axes of the light beams become coplanar; and a convergence optical system converges a bundle of the light beams rearranged by the light beam rearrangement optical system, in directions of the fast axes and the slow axes of the light beams, and makes the converged bundle of the light beams enter an optical fiber.

Laser multiplexing apparatus

An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiOfilm is formed on the entire surface. After a window is formed in a portion of the SiOfilm corresponding to a ridge portion, a p-electrode is formed on a region of the SiOfilm other than the device perimeter.

Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof

In a semiconductor laser device: a multilayer structure including a plurality of semiconductor layers is formed on a substrate; and at least one dielectric layer is formed on each of two end facets of the multilayer structure, where the at least one dielectric layer on each of the two end facets includes a reflectance control layer. In addition, at least one portion of the multilayer structure in at least one vicinity of at least one of the two end facets contains 10 to 1,500 times more oxygen than the other portions of the multilayer structure.

Semiconductor laser device containing controlled interface oxygen at both end facets

A semiconductor laser device constituted by a stack of semiconductor layers formed on a substrate. The semiconductor layers include a first cladding layer of a first conductive type, an electric-to-optical conversion layer, and a second cladding layer of a second conductive type, formed in this order. In the semiconductor laser device, resonator surfaces are formed at opposite ends of the stack, and the end facet of the electric-to-optical conversion layer at each of at least one of the opposite ends of the stack protrudes outward from the shortest current path between the end facets of the first cladding layer and the second cladding layer at the end of the stack through semiconductor layers located between the first cladding layer and the second cladding layer.

Semiconductor laser device in which end of electric-to-optical conversion layer protrudes outward from shortest current path between end facets of cladding layers

In a semiconductor laser device including a multilayered structure being formed of a plurality of semiconductor layers made of a plurality of group III-V compounds, and having a pair of opposite light-exit end facets; and a reflectance control layer being formed on at least one of the pair of light-exit end facets, and having at least two sublayers. In the semiconductor laser device, a region near a boundary between the multilayered structure and one of the at least two sublayers closest to the semiconductor layers of the reflectance control layer has an oxygen concentration of 15 atomic percent (atm %) or below.

Semiconductor laser device having controlled oxygen concentration at boundary between semiconductor layers and reflectance control layer formed on end facet

In a semiconductor laser element including a multilayered structure being formed of a plurality of semiconductor layers made of a plurality of group III-V compounds, and having at least a pair of cleaved end surfaces as a pair of light resonator surfaces, a first reflectance control layer, made of an oxygen gettering material which has a function of gettering oxygen, is formed on at least one of the pair of light resonator surfaces, and a second reflectance control layer made of a nitride of a group III material is formed on the first reflectance control layer.

Growing community of inventors

Kaisei-machi, Japan

Fusao Yamanaka