Denso Corporation

National Institute of Advanced Industrial Science and Technology

Other

Toyota Jidosha Kabushiki Kaisha

Nippondenso Co., Ltd.

Kabushiki Kaisha Toyota Chuo Kenkyusho

Flosfia Inc.

Fusao Hirose

Kazukuni Hara

Shoichi Onda

Naohiro Sugiyama

Tomohisa Kato

Atsuto Okamoto

Masami Naito

Daisuke Nakamura

Shinichi Nishizawa

Emi Oguri

Masahiro Sugimoto

Yoshiaki Fukushima

Kunihiko Hara

Takashi Shinohe

Nobuo Kamiya

Isao Takahashi

Hiroyuki Kondo

Toshihiko Tani

Ayumu Adachi

Koichi Nishikawa

Hiroaki Wakayama

Hideo Matsuki

Itaru Gunjishima

Makoto Takagi

Kazutoshi Kojima

Hideyuki Uehigashi

Masao Nagakubo

Jun Kojima

Nozomu Okumura

Kouki Futatsuyama

Junji Ohara

Toru Imura

Hideshi Mori

Yasuo Kitoh

Haruyoshi Kuriyama

Takashi Onoda

Tatsuya Toriyama

Takeshi Hasegawa

A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

Crystalline oxide semiconductor

A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2&#xd7;10cmor higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.

Silicon carbide single crystal and manufacturing method of the same

A silicon carbide manufacturing device includes a graphite crucible, in which a seed crystal is disposed, a gas-inducing pipe coupled with the graphite crucible, and an attachment prevention apparatus. The gas-inducing pipe has a column-shaped hollow part, through which a source gas flows into the graphite crucible. The attachment prevention apparatus includes a rod extending to a flow direction of the source gas, and a revolving and rotating element for revolving the rod along an inner wall of the gas-inducing pipe while rotating the rod on an axis of the rod in parallel to the flow direction.

Silicon carbide manufacturing device and method of manufacturing silicon carbide

A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.

Apparatus for manufacturing single crystal

When a SiC substrate is heated up to around 1800&#xb0;C., sublimation of SiC occurs from the SiC substrate. Moreover, temperature of the front surface of the SiC substrate is lower than that of the back surface of the SiC substrate. Therefore, sublimation gas sublimed from a back-surface vicinity of the substrate, where temperature is high, moves to a front-surface vicinity of the substrate, where temperature is low, through the hollow micro-pipe defect. Epitaxial growth proceeds on the front surface of the substrate while the sublimation gas is recrystallized at the front-surface vicinity of the substrate, so that the micro-pipe defect is occluded.

Manufacturing method of silicon carbide single crystals

A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a seed crystal with a screw dislocation generation region; and growing the single crystal on a growth surface of the seed crystal. The generation region occupies equal to or smaller than 50% of the growth surface, which has an offset angle equal to or smaller than 60 degrees. The screw dislocation density in the single crystal generated from the generation region is higher than that in the other region. The single crystal includes a flat C-surface facet disposed on a growing surface of the single crystal. The C-surface facet overlaps at least one of parts of the growing surface provided by projecting the generation region in a direction perpendicular to the growth surface and in a direction parallel to a &#x3c;&#x3e; axis, respectively.

Method for manufacturing silicon carbide single crystal from dislocation control seed crystal

Method and apparatus for manufacturing single crystal

It is the purpose of the present invention to prevent a macroscopic defect in the production of an SiC single crystal. SiC source material powder and an SiC seed crystal are disposed inside a graphite crucible, and the SiC source material powder is thermally sublimated and recrystallized on a front surface of the SiC seed crystal to grow an SiC single crystal. In this sublimation-recrystallization method, a protection layer is provided on a back surface of the SiC seed crystal. The SiC seed crystal is mechanically supported by a supporting part disposed on the graphite crucible without bonding. Thereby, it is possible to improve the thermal maldistribution on the back surface of the SiC seed crystal and possible to suppress damage of the protection layer due to the thermal maldistribution. Thus, macroscopic defects in the grown SiC single crystal are preferably suppressed.

Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal

When a SiC substrate is heated up to around 1800&deg; C., sublimation of SiC occurs from the SiC substrate. Moreover, temperature of the front surface of the SiC substrate is lower than that of the back surface of the SiC substrate. Therefore, sublimation gas sublimed from a back-surface vicinity of the substrate, where temperature is high, moves to a front-surface vicinity of the substrate, where temperature is low, through the hollow micro-pipe defect. Epitaxial growth proceeds on the front surface of the substrate while the sublimation gas is recrystallized at the front-surface vicinity of the substrate, so that the micro-pipe defect is occluded.

A crucible for growing a single crystal therein has a seed crystal attachment portion and a peripheral portion surrounding the seed crystal attachment portion through a gap provided therebetween. The seed crystal attachment portion has a support surface for holding a seed crystal on which the single crystal is to be grown, and the support surface is recessed from a surface of the peripheral portion. The seed crystal is attached to the support surface to cover an entire area of the support surface. Accordingly, no poly crystal is formed on the seed crystal attachment portion, and the single crystal can be grown on the seed crystal with high quality.

Method and apparatus for fabricating high quality single crystal

Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened on the surface of the silicon carbide single crystal (SiC substrate) is sealed up with a coating material. Then heat treatment is performed so as to saturate the inside of the micropipe defects with silicon carbide vapors. By this, the micropipe defects existing in the SiC substrate can be closed within the SiC substrate, not in a newly grown layer. Further, the micropipe defects can be efficiently closed by filling the micropipe defects with a silicon carbide material by preliminarily using super critical fluid and the like.

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same

A strain sensor for detecting strain in automobiles, robots, and the like includes a magnetostrictive layer. The magnetostrictive layer is formed by irradiating an alloy layer with a high energy density beam (such as a laser) to form a magnetostrictive layer having an amorphous structure. The resulting magnetostrictive layer has a magnetic inductance in the direction of irradiation that is much higher than in a perpendicular direction thereof. Using such a sensor, it is possible to selectively detect components of stresses and strains in a given direction.

Method of formation of magnetostrictive layer and strain sensor using

Growing community of inventors

Obu, Japan

Fusao Hirose