Chinese Academy of Sciences

Corning Incorporated

Beijing University

Fuqiang Huang

Zhen Song

Xinyuan Liu

Tongping Xiu

Hui Bi

Yufeng Tang

Zhou Wang

Yaoming Wang

Wujie Dong

Zichao Liu

Chongyin Yang

Xiangli Che

The invention relates to a class of electrochemical energy storage materials and a preparation method and application thereof. A porous metal oxide-based electrochemical energy storage material at least comprises a host metal oxide with a hierarchical pore structure; wherein, the host metal oxide is a single crystal, quasicrystal, or twin crystal structure with ordered atomic lattice arrangement, the crystal is rich in oxygen atom vacancy defects, the structural general formula is MO, wherein M is selected from one or more combinations of niobium element, molybdenum element, titanium element, vanadium element, manganese element, iron element, cobalt element, nickel element, copper element, zinc element, tungsten element, tantalum element, and zirconium element; and 1≤x≤2, 1≤y≤5, and 0.1≤z≤0.9, preferably NbO.

Class of porous metal oxide-based electrochemical energy storage materials and preparation method and application thereof

Disclosed herein are methods for forming a graphene film on a substrate, the methods comprising depositing graphene on a surface of the substrate by a first vapor deposition step to form a discontinuous graphene crystal layer; depositing a graphene oxide layer on the discontinuous graphene crystal layer to form a composite layer; and depositing graphene on the composite layer by a second vapor deposition step, wherein the graphene oxide layer is substantially reduced to a graphene layer during the second vapor deposition step. Transparent coated substrates comprising such graphene films are also disclosed herein, wherein the graphene films have a resistance of less than about 10 KΩ/sq.

Method for producing a graphene film

Disclosed herein are methods for forming a graphene film on a substrate, the methods comprising depositing graphene on a surface of the substrate by a first vapor deposition step to form a discontinuous graphene crystal layer; depositing a graphene oxide layer on the discontinuous graphene crystal layer to form a composite layer; and depositing graphene on the composite layer by a second vapor deposition step, wherein the graphene oxide layer is substantially reduced to a graphene layer during the second vapor deposition step. Transparent coated substrates comprising such graphene films are also disclosed herein, wherein the graphene films have a resistance of less than about 10 K&#x3a9;/sq.

A titanium oxide-based supercapacitor electrode material and a method of manufacturing same. A reactive substance of the titanium oxide-based supercapacitor electrode material is a conductive titanium oxide. The conductive titanium oxide is a sub-stoichiometric titanium oxide, reduced titanium dioxide, or doped reduced titanium dioxide obtained by further doping an element in reduced titanium dioxide. The titanium oxide-based supercapacitor electrode material has a carrier concentration greater than 10cm, and the titanium oxide-based supercapacitor electrode material has a specific capacitance 20 F/g to 1,740 F/g at a charge/discharge current of 1 A/g.

Titanium oxide-based supercapacitor electrode material and method of manufacturing same

A preparation method of the light absorption layer of a copper-indium-gallium-sulfur-selenium film solar cell is provided. The method employs a non-vacuum liquid-phase chemical technique, which comprises following steps: forming source solution containing copper, indium, gallium, sulfur and selenium; using the solution to form a precursor film on a substrate by a non-vacuum liquid-phase process; drying and annealing the precursor film. Thus, a compound film of copper-indium-gallium-sulfur-selenium is gained.

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Shanghai, China

Fuqiang Huang