Fujifilm Corporation

Fuji Photo Film Company, Limited

Fumiyuki Nishiyama

Kunihiko Kodama

Toru Fujimori

Hiromi Kanda

Shinichi Kanna

Shiro Tan

Kenichiro Sato

Hidenori Takahashi

Yasumasa Kawabe

Yoshimasa Aotani

Kana Fujii

Hyou Takahashi

Yasunori Takata

A resist composition includes a resin (A) containing any of repeating units (a) of general formulae (I-a) and (I-b) below and any of repeating units (b) of general formula (II) below but containing substantially no repeating unit in which an alcoholic hydroxyl group is introduced, and any of compounds (B) of general formulae (III-a) and (III-b) below. 

Resist composition, resist film therefrom and method of forming negative pattern using the composition

A positive resist composition comprises: (A) a resin that has a repeating unit represented by general formula (a1) and increases its solubility in an alkali developer by action of an acid; (B) a compound which generates an acid upon irradiation with an actinic ray or a radiation; and (C) a resin that has at least one of a fluorine atom and a silicon atom and has a group selected from the group consisting of (x), (y) and (z); and (D) a solvent: wherein R represents a hydrogen atom or a methyl group, Rxa represents an alkyl group or a cycloalkyl group, and n represents an integer of 1 to 8.

Positive resist composition and pattern-forming method

A positive photosensitive composition comprising: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B1) a resin of which solubility in an alkali developer increases under an action of an acid; and (B2) a resin that has at least one group selected from (a) an alkali-soluble group and (b) a group capable of decomposing under an action of an alkali to produce an alkali-soluble group, and the resin (B2) does not have a group capable of decomposing under an action of an acid; and a pattern forming method using the same.

Positive photosensitive composition and pattern forming method using the same

A positive resist composition comprising (A) resin having a monocyclic or polycyclic alicyclic hydrocarbon structure and capable of decomposing by the action of an acid to increase the solubility in an alkaline developer, (B) a compound capable of generating an acid upon treatment with one of an actinic ray and radiation and (F) a specific surfactant containing a fluorine atom in an amount of from 30 to 60 mass %, and a pattern-forming method using the same.

Positive resist composition and pattern-forming method using the same

A positive resist composition comprising: (A) a resin insoluble or sparingly soluble in an alkali but capable of decomposing under an action of an acid to increase a solubility in an alkali developer, the resin having a &#x3b2;-(meth)acroyloxy-&#x3b3;-butyrolactone repeating unit represented by the following formula (1) containing a lactone ring which may have a substituent; and (B) a compound capable of generating an organic acid represented by the formula (2), (3), (3'), (4) or (5) as defined herein upon irradiation of actinic rays or radiation.

Positive resist composition and pattern forming method using the resist composition

A positive-working photosensitive composition that includes (A) a resin containing repeating units having diamantane structures and capable of decomposing under action of an acid to increase solubility in an alkali developer, (B) a compound capable of generating a specific organic acid upon irradiation with an actinic ray or radiation, and (C) a solvent.

Positive-working photosensitive composition and pattern forming method using the same

A resist composition for immersion, comprises: (A) a resin of which solubility in an alkali developer increases under an action of an acid; (B) a photoacid generator; and (C) a mixed solvent containing an alkylene glycol alkyl ether carboxylate and a propylene glycol monomethyl ether.

Resist composition for immersion exposure and pattern formation method using the same

A positive resist composition comprising: (A) a resin having alicyclic hydrocarbon groups in side chains, containing specified two types of repeating units, which increases the solubility in an alkali developing solution by the action of an acid; and (B) a particular sulfonium compound having a specified structure and capable of generating an acid upon irradiation with an actinic ray or radiation.

Positive resist composition and pattern formation method using the same

A positive resist composition comprises (A) a resin capable of decomposing by the action of an acid to increase solubility in an alkali developer, and (B) a compound capable of generating an aromatic sulfonic acid substituted with at least one group containing a fluorine atom upon irradiation with one of an actinic ray and radiation.

Positive resist composition

A positive resist composition comprising a resin (A), which is decomposed by the action of an acid to increase solubility in an alkali developing solution, containing a structural unit including a group represented by formula (X) defined in the specification and/or a resin (B), which is decomposed by the action of an acid to increase solubility in an alkali developing solution, containing a structural unit including a group represented by formula (Y) defined in the specification, and a resin (C), which is decomposed by the action of an acid to increase solubility in an alkali developing solution, containing a structural unit including a group represented by formula (Q) defined in the specification; and a compound that generates an acid upon irradiation of an actinic ray or radiation.

A positive photoresist composition is disclosed, comprising a resin having a structural unit containing a specific group and capable of decomposing under the action of an acid to increase the solubility in an alkali developer, a resin having a structural unit containing a specific group and capable of decomposing under the action of an acid to increase the solubility in an alkali developer, and a compound capable of generating an acid upon irradiation with actinic rays or radiation.

Positive photoresist composition

A positive photoresist composition for exposure to a far ultraviolet ray which comprises (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, (B) a resin which contains a repeating unit corresponding to hydroxystyrene and solubility of which increases in an alkaline developing solution by the action of an acid, and (C) (1) at least one solvent selected from the group consisting of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether propionate, and (2) at least one solvent selected from the group consisting of propylene glycol monomethyl ether and ethoxyethyl propionate. The positive photoresist composition of the present invention is suitable for exposure to a far ultraviolet ray, particularly a KrF excimer laser beam, is improved in line edge roughness and micro grain, is excellent in uniformity of carting on a substrate and has less particles in its resist solution.

Growing community of inventors

Shizuoka, Japan

Fumiyuki Nishiyama