Hitachi, Ltd.

Hitachi Micro Eng. Ltd.

Fumiyuki Kobayashi

Takahiro Daikoku

Shizuo Zushi

Norio Sengoku

Tasao Soga

Masahide Okamoto

Mitsuo Miyamoto

Yutaka Watanabe

Ryohei Satoh

Satoru Ogihara

Noriyuki Ashiwake

Akio Takahashi

Hiroyuki Kojima

Akio Mukoh

Masahide Harada

Kenji Takeda

Hideaki Sasaki

Toshio Hatada

Fumio Nakano

Masahiro Okamura

Kenichi Kasai

Tsuyoshi Fujita

Mitugu Shirai

Hiroaki Hachino

Hirayoshi Tanei

Takayuki Atarashi

Tamotsu Tsukaguchi

Masato Nakamura

Mamoru Sawahata

Takaji Takenaka

Shoichi Iwanaga

Shousaku Ishihara

Keizou Kawamura

Toshio Hatsuda

Tetsuo Ogata

Hiroshi Kozai

Kousaku Morita

Fumikazu Tagami

Akira Nagai

Osamu Yamada

Haruo Akahoshi

Yutaka Sugita

Takashi Inoue

Hitoshi Yokono

Kenji Miyata

Hideo Suzuki

Tadakatsu Nakajima

Kazuji Yamada

Tadahiko Miyoshi

Motohiro Sato

Wataru Nakayama

Nobuyuki Ushifusa

Tetsuya Hayashida

Seigou Yukutake

Akio Yasukawa

Akira Masaki

Kunio Miyazaki

Shunichi Numata

Takaya Suzuki

Junichi Katagiri

Hirokazu Inoue

Takashi Nishida

Hideo Arima

Akio Idei

Minoru Yamada

Kuninori Imai

Kousuke Nakamura

Mitsuru Ura

Yasutoshi Kurihara

Keiichirou Nakanishi

Hideho Yamamura

Masakazu Yamamoto

Tsutomu Imai

Yasuo Matsushita

Toshihiko Ohta

Shigeo Kuroda

Takao Terabayashi

Osamu Miura

Kiyoshi Matsui

Susumu Iwai

Shigekazu Kieda

Hironori Kodama

Tadao Kushima

Toshiki Iino

Masao Sekibata

Toshitada Netsu

Tositada Netsu

Nobuo Kawasaki

Hideki Watanabe

Minoru Tanaka

Toshio Mori

Hiroshi Go

Akihiro Ando

Yoshiyuki Ohzawa

Yoshito Hayashi

Satomi Kobayashi

Keizo Kawamura

Nobuaki Ohki

Masahiro Gooda

Yoshiaki Horita

Ceramic circuit substrate which is sintered at 900 to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850 to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.

Circuit substrate and manufacture thereof, ceramic composition for

Ceramic circuit substrate which is sintered at 900.degree. to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850.degree. to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.

Circuit substrate and electronics computer, using sintered glass ceramics

A cooling device of a multi-chip module has micropackages that are independent of thermal deformation and easy to assembly and disassembly. The multi-chip module includes a multi-layer substrate on which the micropackages, each encasing an LSI chip, are mounted, and a housing formed integrally with a cooler. Each of the micropackages includes a first heat conduction member, having a cap portion for receiving the LSI chip and a first fin made of the same material as the cap portion to be integral therewith, and a substrate fixed to the cap portion of the first heat conduction member, the LSI chip being mounted on the substrate which is securely fixed to the cap portion of the heat conduction member while being fixedly joined at the back surface thereof to an inner surface of the cap portion of the first heat conduction member. Second heat conduction members, each including a base portion and a second fin, are disposed to engage with the first fins and be pressed against the cooler by a spring, respectively.

Cooling device of multi-chip module

In an electronic circuit device having an input/output pin junction electrode, in order to remarkably improve the junction characteristics such as wettability and junction strength and to drastically simplify the production process, in forming an electronic circuit board in which glass ceramics is used for board material and a wiring conductor and junction electrode wherein the Cu is sized to extend beyond the pin hole so that solder only contacts it and not the ceramic circuit board. The wiring and junction electrode is formed in a same process while forming a cover coat on the electrode using board material, and Au or Au--Ni laminated film is formed on this electrode as occasion demands, and then an electronic component is connected thereto using a solder such a Au--Sn or Au--Ge.

Electronic circuit device

A thin film multilayer wiring material excellent in reliability, yield, productivity, and higher positioning accuracy includes an insulation organic film having a wiring pattern on one surface and an adhesive layer on another principal surface. The insulation organic film is a polyimide film having a heat resistance at a pyrolysis beginning temperature of 350.degree. to 550.degree. C., a dielectric constant of 3.5-2.2 and a flame retardance of V-0 or V-1 according to the UL-94 standard. The adhesive layer contains an ether bismaleimide compound.

Method for producing thin film multilayer wiring board

An electronic apparatus having a plurality of semiconductor devices which produce heat during operation, with a heat sink having a plurality of tabular or pin-type fins is provided on each semiconductor device. Nozzles are associated with the heat sinks so as to supply a cooling fluid into the heat sinks. The heat sinks are so arranged that all these heat sinks guide and discharge the cooling fluid in the same direction. A breadth of the respective nozzles, as measured in the direction (x-direction) of the flow and discharge of the cooling fluid determined by the heat sink is less than that of the associated heat sink. A width of the nozzle, as measured in the direction (y-direction) perpendicular to the x-direction is smaller than that of the associated heat sink. A space between adjacent nozzles provide a discharge passage of an ample cross-section which reduces resistance encountered by the heated cooling medium to be discharged therethrough.

Electronic apparatus

An LSI mounting substrate having a multilayered thin film wiring portion, with the thin film wiring portion being divided into wiring units each composed of a plurality of wiring layers, with the wirings between the units being electrically connected through connecting pads defined in the same surface as that of a surface conductive layer of the unit.

Mounting substrate

A semiconductor chip carrier, an electronic module having the semiconductor chip carrier mounted therein, and an electronic device incorporating the electronic module. A semiconductor chip carrier comprises a multi-layer wiring substrate including a multi-layer ceramic board, and a thin film circuit mounted on said multi-layer ceramic board, and a semiconductor chip mounted and connected to the thin film circuit, wherein a low-resistance conductor path is provided on the surface of or in the multi-layer wiring substrate to connect between signal terminals which need to be connected with a low-resistance wire in the semiconductor chip, thereby realizing signal transmission at low resistance between the signal terminals of the semiconductor chip by this conductor path. This arrangement makes it possible to shorten the signal delay time of a semiconductor chip, and achieve higher speed signal processing in modules and electronic equipment in which a thus-improved semiconductor chip is used.

Semiconductor chip carrier, module having same chip carrier mounted

A method of producing a sintered multi-layer ceramic body used for ceramic parts of various electronic devices such as multi-layer substrates for LSI packaging and highly functional structural materials and by applying a pressure and/or constraining force to an outermost surface of the laminate. The method is featured by the shape of the surfaces to which a pressure and/or constraining force are not applied, ranges of the pressure and/or the constraining force, and the like.

Method for producing multilayer ceramic body with convex side faces

A semiconductor module comprises a substrate, a plurality of semiconductor chips mounted on the substrate, a plurality of heat conduction members mounted on the back surfaces of the plurality of semiconductor chips, respectively, and a cooling jacket, on which the plurality of heat conduction members are bonded with heat conductive bonding agent, sealed with the substrate, wherein, in a surface of each of the plurality of heat conduction members adjacent to the cooling jacket and in a surface of the cooling jacket adjacent to the heat conduction members, around a portion corresponding to the back surface of each of the semiconductor chip is formed a portion which has non-affinity for the heat conductive bonding agent. Further, it is preferred that a reservoir having an affinity for the heat conductive bonding agent and serving to receive an excessive bonding agent is formed around each of the non-affinity portions of the plurality of heat conduction members and the cooling jacket.

Bonding structure of thermal conductive members for a multi-chip module

The present invention provides a multistep electronic circuit device comprising a plurality of parts and elements mechanically or electrically bonded in sequence to each other and to a substrate with a plurality of solders, which comprises as the parts and elements the substrate, input and output pins and LSI chips, and optionally packages and a cooler bonded through multistep bonding, the bondings of the parts and elements including at least one CCB bonding and at least one sealing, the solders each having a lower melting point than the heatproof temperature of the part or element to be bonded with the solder, and one of the solders having a melting point of at least 10.degree. C. lower than that of the other solder used at the bonding step immediately before. The solders used are selected from Au10-15wt%Ge alloy (melting point: 356.degree.-450.degree. C.), Pb1-5wt%Sn alloy (melting point: 314.degree.-325.degree. C.), Pb10-13wt%Sn alloy (melting point: 270.degree.-300.degree. C.), Au20wt%Sn alloy (melting point: 280.degree. C.), Sn3-6wt%Sb alloy (melting point: 232.degree.-243.degree. C.), Sn2-8wt%Ag alloy (melting point: 221.degree.-235.degree. C.), Sn35-55wt%Pb alloy (melting point: 183.degree. -200.degree. C.) and Sn45wt%Pb18wt%Bi (melting point: 135.degree.-160.degree. C.).

Electronic circuit device and method of producing the same

An electronic circuit device comprising an electronic part having a gold-plated connecting terminal arranged thereon connected through a solder to a circuit substrate on the predetermined connecting element thereof, in which the connecting terminal of the electronic part and the solder-connected portion of the circuit substrate are constituted by an alloy composition consisting of 1.0 to 8.0 wt. % of Ag, 0.1 to 6.0 wt % of Au and the balance of Sn, is provided. The device is made by using a solder for use in connecting a gold-plated connecting terminal which consists of 1.0 to 8.0 wt % of Ag and the balance of Sn and a method of connecting an electronic part having a gold-plated connecting terminal arranged thereon to a circuit substrate, which comprises the steps of placing the electronic part and the gold-plated connected terminal so as to face each other via a solder and then melting the solder to connect and fix the connecting terminal to the circuit substrate onto the predetermined element thereof, the composition of said solder consisting of 1.0 to 8.0 wt % Ag and the balance of Sn.

Electronic circuit device, method of connecting with solder and solder

A cooling device for cooling semiconductor elements by removing heat generated from the semiconductor elements such as, for example, semiconductor integrated chips in a large-sized electronic computer. The cooling device is fashioned of a composite AlN-BN sintered material having a Vickers hardness not higher than one-fifth of that of an AlN material, and an anisotropic property of thermal conductivity in a two dimensional direction is higher than that of AlN which is isotropic in thermal conductivity. The cooling device may be mass-produced while nevertheless having a high transfer performance matching the quantity of heat generated for each semiconductor element even if the composite sintered material is uniform in shape and size. The composite sintered material is formed by a mixture of a hexagonal BN powder having an average particle diameter of not less than 1 .mu.m and an AlN powder having an average particle diameter of about 2 .mu.m, with a sintering aid being added and the powdery mixture being subjected to a hot press sintering whereby the sintered material is low in thermal conductivity in a direction parallel to an axis of a shaft of the hot press.

Cooling arrangement for semiconductor devices and method of making the

A cooling structure for cooling a multi-chip module by a heat sink is disclosed in which the heat sink is disposed above the multi-chip module in a state that heat-conductive grease is sandwiched between the heat sink and the module cap of the multi-chip module, and the heat sink, the module cap and the wiring board of the multi-chip module are clamped as one body by clamp member, and in which a heat-sink pushing member for pressing the heat sink against the module cap by a constant force is attached to the clamp members.

Mounting mechanism for mounting heat sink on multi-chip module

In a semiconductor module including a wiring substrate having one or a plurality of semiconductor devices electrically connected thereon, a housing constituted of a sealing frame and a ceiling board to enclose the semiconductor devices therein, and a cooling jacket to cool the semiconductor devices. The semiconductor module comprises an elastic arm placed on the cooling jacket for exerting pressure to cause the cooling jacket to be uniformly contacted with the housing ceiling board, and clamping jigs press the cooling jacket and the ceiling board through the elastic arm, so that the clamping jigs may serve to press the respective intermediate positions of the four sides of the cooling jacket through the elastic arm, or screw fasteners may be provided on the elastic arm for controlling the displacements and pressing force.

Semiconductor module

Growing community of inventors

Sagamihara, Japan

Fumiyuki Kobayashi