Sharp Kabushiki Kaisha Corporation

Fumiyoshi Yoshioka

Hiroshi Iwata

Akihide Shibata

Masayuki Nakano

Akira Takahashi

Kenji Komiya

Tetsu Negishi

A metal lineis formed in a linear area S of an insulative substrate, and moreover a metal lineis formed generally parallel to the metal linewith a specified distance thereto. The metal lineis connected to an n-type semiconductor coreof bar-like structure light-emitting elementsA toD, and the metal lineis connected to a p-type semiconductor layer. By dividing the insulative substrateinto a plurality of divisional substrates, a plurality of light-emitting devices in each of which a plurality of bar-like structure light-emitting elementsare placed on the divisional substrates are formed.

Light-emitting device manufacturing method, light-emitting device, lighting device, backlight, liquid-crystal panel, display device, display device manufacturing method, display device drive method and liquid-crystal display device

A semiconductor memory device includes: a gate electrode formed on a semiconductor layer via a gate insulating film; a channel region disposed under the gate electrode; diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region; and memory functional units formed on both sides of the gate electrode and having the function of retaining charges, wherein each of the diffusion regions has: a high-concentration impurity region disposed so as to be offset from the gate electrode; and a low-concentration impurity region disposed in contact with the high-concentration impurity region so as to overlap with the gate electrode, and an amount of current flowing from one of the diffusion regions to the other diffusion region is changed when a voltage is applied to the gate electrode in accordance with an amount of charges retained in the memory functional units.

Semiconductor memory device and portable electronic apparatus

A gate oxide film ( ), a gate electrode ( ) and a gate cap insulating film ( ) are stacked on an active region of a p-type semiconductor substrate ( ), and an insulating side wall ( ) is formed, followed by BF ion implantation. Thus, a surface of the p-type semiconductor substrate becomes amorphous so that single-crystal silicon is prevented from epitaxially growing in the next process of depositing polysilicon ( ). Halo regions ( ) are formed using the BF ions having the opposite conductivity to a source/drain to reduce the short-channel effect. The substrate is then passed through a nitrogen purge chamber having a dew point kept at &minus;100&deg; C. to remove water molecules completely, and polysilicon ( ) is deposited. Because native oxide is prevented from growing at an interface between the active region and the polysilicon, source/drain regions ( ) formed later by implantation and diffusion of n-type impurity ions achieve a uniform junction depth.

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Tenri, Japan

Fumiyoshi Yoshioka