Wako Pure Chemical Industries, Inc.

Matsushita Electric Industrial Co., Ltd.

Nippon Telegraph and Telephone Corporation

Sumitomo Chemical Company, Limited

Matsushita Electrical Industrial Co., Ltd.

Matsushita Electronic Industrial Co., Ltd

Fumiyoshi Urano

Keiji Oono

Hirotoshi Fujie

Masayuki Endo

Masaaki Nakahata

Takaaki Negishi

Akiko Katsuyama

Tsuneaki Maesawa

Hiroshi Matsuda

Takanori Yasuda

Motoshige Sumino

Yoshiyuki Tani

Kazuhiro Yamashita

Shigeki Ishibashi

Satoshi Kobayashi

Kazufumi Ogawa

Koji Ichikawa

Masaru Sasago

Naoki Takeyama

Tohru Maruno

Motoaki Tanaka

Shigeaki Imazeki

Kouzaburou Nakamura

Shogo Kobayashi

Kazunori Sakamoto

Kazuhito Fukasawa

Naoki Katano

Tomoko Kiryu

Takaai Negishi

Jiro Sugimoto

Masao Morita

Komei Mizuno

The present invention relates to a novel bisimide compound useful as an acid generator for a chemically amplified resist composition used in manufacturing of semiconductor element and the like or a raw material for synthesizing heat resistant polymers, an acid generator and a resist composition using said compound and a method for pattern formation using said composition, and further relates to a synthetic n intermediate for a bisimide compound and a bis(N-hydroxy)phthalimide compound useful as an intermediate for a functional compound such as a heat resistant polymer or photosensitive material, and provides a bisimide compound shown by the general formula [1]: (wherein R and Aare as defined in claim).

Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition

wherein Ris a Cbranched or cyclic alkyl group, and Ris a Cstraight-chain, branched or cyclic alkyl group, is effective as a photoacid generator when used in a photoresist material for light of 300 nm or less.

Diazodisulfones

The present invention relates to a resist composition for practical use with high resolution, high sensitivity, superior pattern profile and no outgas in energy irradiation under high vacuum, suitable to an ultra-fine processing technology represented by use of electron beam and the like, and provides: (1) a resist composition comprising at least one kind of polymer containing, as components thereof, a monomer unit represented by the following general formula [1]: a monomer unit represented by the following general formula [2]: and a monomer unit represented by the following general formula [3]: at least one kind of compound to generate an acid by irradiation of radioactive ray, represented by the following general formula [4]; an organic basic compound; and a solvent, (2) the resist composition in accordance with (1), further containing a polymer unit represented by the following general formula [13]: and, (3) the resist composition in accordance with (1) and (2), further containing a compound represented by the following general formula [4]: as a compound to generate an acid by irradiation of radioactive ray.

Resist compositions

Sulfonium salt compounds

A resist composition comprising (a) at least two kinds of polymers which become alkali-soluble by the action of an acid, (b) as a photoacid generator, a combination of an alkylsulfonyl diazomethane compound and a triarylsulfonium arylsulfonate compound or a diaryliodonium arylsulfonate compound, and (c) a solvent is excellent as a chemically amplified resist composition to give excellent pattern shape and very fine line-and-space, particularly when exposed to lights having a wavelength of 300 nm or less.

Resist composition

Agent for reducing substrate dependence

A polymer of polyhydroxystyrene derivative containing an acetal or ketal group which can easily be eliminated in the presence of an acid in the molecule and having a very narrow molecular weight distribution gives a resist material suitable for forming ultrafine patterns excellent in resolution, heat resistance, mask linearity, and other properties without causing problems of delay time and the like.

Polymer and resist material

A polymer composition comprising (i) a polymer (a) having a monomer unit containing a functional group A which becomes alkali-soluble by heating in the presence of an acid, (ii) a polymer (b) having a monomer unit containing a functional group B which also becomes alkali-soluble, but less easily than the functional group A, by heating in the presence of an acid, and if necessary in addition to (i) and (ii) or in place of (ii), (iii) a phenolic compound having a weight-average molecular weight of 300 to 15,000 gives together with an photoacid generator a resist material suitable for forming a pattern excellent in sensitivity, resolution, mask linearity and other properties.

Polymer composition and resist material

To provide a polymer comprising as a structural unit a monomer unit containing a hydroxy group or other hydrophilic radical and other functional group in the molecule which is useful in medical, cosmetic and electric industries. A polymer comprising as a structural unit a monomer unit shown by the general formfula [1] ##STR1## (wherein R.sup.1 and R.sup.2 are, independently, a hydrogen atom or a halogen atom, R.sup.3 is a hydrophilic radical and R.sup.4 is a cyano group or a carboxyl group which may he esterified).

Functional polymers

A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.

Fine pattern forming process using a resist composition sensitive to

Resist composition for deep ultraviolet light

A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.

Process for forming a pattern on a semiconductor substrate using a deep

A resist composition comprising (a) a polymer having at least repeating units of the formulae: ##STR1## (b) a photoacid generator and (c) a solvent, has high sensitivity to light, excellent heat resistance, adhesiveness to a substrate and suitable for pattern formation with high resolution.

Pattern formation process

A photoresist composition comprising (a) a difficultly alkali-soluble special resin, (b) a photo-sensitive compound capable of generating a carboxylic acid, and (c) a solvent, is effective for pattern formation using deep ultraviolet light, KrF excimer laser beams, etc.

Resist material

Deep ultraviolet absorbent composition

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Kawagoe, Japan

Fumiyoshi Urano