Renesas Electronics Corporation

Nec Electronics Corporation

Fumiyoshi Kawashiro

Akira Yajima

Takehiko Maeda

Satoshi Itou

An improvement is achieved in the reliability of a semiconductor device. Over a semiconductor substrate, an interlayer insulating film is formed and, over the interlayer insulating film, a pad is formed. Over the interlayer insulating film, an insulating film is formed so as to cover the pad. In the insulating film, an opening is formed to expose a part of the pad. The pad is a pad to which a copper wire is to be electrically coupled and which includes an Al-containing conductive film containing aluminum as a main component. Over the Al-containing conductive film in a region overlapping the opening in plan view, a laminated film including a barrier conductor film, and a metal film over the barrier conductor film is formed. The metal film is in an uppermost layer. The barrier conductor film is a single-layer film or a laminated film including one or more layers of films selected from the group consisting of a Ti film, a TiN film, a Ta film, a TaN film, a W film, a WN film, a TiW film, and a TaW film. The metal film is made of one or more metals selected from the group consisting of Pd, Au, Ru, Rh, Pt, and Ir.

Semiconductor device and method of manufacturing the same

A semiconductor device includes: an interconnection substrate on which a semiconductor chip is mounted; electrodes formed on a surface of the interconnection substrate; and solder bumps formed on the electrodes. The solder bump includes a base section and a surface layer section that covers the base section. The surface layer section includes conductive metal selected from the group consisting of Cu, Ni, Au, and Ag, and Sn at least and a ratio of the number of atoms of the conductive metal to the number of Sn atoms per a unit volume is more than 0.01.

Semiconductor device

A semiconductor device includes a substrate, a metal layer, an alloy layer and a Sn&#x2014;Ag&#x2014;Cu-based solder ball. The metal layer is configured to be formed on the substrate. The alloy layer is configured to be formed on the metal layer. The Sn&#x2014;Ag&#x2014;Cu-based solder ball is configured to be placed on the alloy layer. The alloy layer includes Ni and Zn as essential elements.

Semiconductor device with solder balls having high reliability

In one embodiment, a semiconductor device has a semiconductor element made up of a semiconductor chip, first solder balls provided on the semiconductor chip and a BGA substrate on which the semiconductor chip is mounted via the first solder balls. Furthermore, the semiconductor device has external terminals on a surface of the BGA substrate opposing to a surface on which the semiconductor chip is mounted. The external terminals include oxide films provided with through holes.

Growing community of inventors

Kanagawa, Japan

Fumiyoshi Kawashiro