Fujitsu Corporation

Fumiyo Takeuchi

Nobuo Sasaki

Akito Hara

Kenichi Yoshino

An a-Si film is patterned into a linear shape (ribbon shape) or island shape on a glass substrate. The upper surface of the a-Si film or the lower surface of the glass substrate is irradiated and scanned with an energy beam output continuously along the time axis from a CW laser in a direction indicated by an arrow, thereby crystallizing the a-Si film. This implements a TFT in which the transistor characteristics of the TFT are made uniform at high level, and the mobility is high particularly in a peripheral circuit region to enable high-speed driving in applications to a system-on glass and the like.

Semiconductor device, manufacturing method therefor, and semiconductor manufacturing apparatus

A semiconductor manufacturing apparatus emits an energy beam for crystallizing a semiconductor film formed on a substrate. The apparatus can output a plurality of energy beams continuously in relation to time and move the energy beams to scan a target to be irradiated. The output instability of the energy beam is smaller than &plusmn;1%/h. The noise (optical noise) indicating the instability of the energy beam can be not more than 0.1 rms %.

Growing community of inventors

Kawasaki, Japan

Fumiyo Takeuchi