Sony Corporation

Fumiyo Narui

Masafumi Ozawa

Satoshi Ito

A light emitting device is formed of a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, and a second cladding layer on the active layer. A carrier blocking layer also serving as an etching stopping layer during formation of the second cladding layer is provided between the active layer and the second cladding layer. Both sides of the second cladding layer are filled by a semiconductor layer having a resistance substantially higher than the other layers which the filler layer is in contact with. The first and second cladding layers, active layer, carrier blocking layer, and semiconductor layer of higher resistance comprise a II-VI compound semiconductor.

Light emitting device having first and second cladding layers with an

When a ZnSe, ZnTe or ZnSSe or Zn.sub.1-a Mg.sub.a S.sub.b Se.sub.1-b (0&lt;a&lt;1, 0&lt;b&lt;1) layer provided on a Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y (0&lt;x&lt;1, 0&lt;y&lt;1, a&lt;x) layer is selectively etched by a dry etching method such as an RIE method, the Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y layer is used as an etching stoppig layer. Thus, selective etching of the ZnSe, ZnTe, ZnSSe or Zn.sub.1-a Mg.sub.a S.sub.b Se.sub.1-b layer can be conducted with excellent controllability and reproducibility.

Selective etching method, optoelectronic device and its fabricating

When a ZnSe, ZnTe or ZnSSe or Zn.sub.1-a Mg.sub.a S.sub.b Se.sub.1-b (0&lt;a&lt;1, 0&lt;b&lt;1) layer provided on a Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y (0&lt;x&lt;1, 0&lt;y&lt;1, a&lt;x) layer is selectively etched by a dry etching method such as an RIE method, the Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y layer is used as an etching stopping layer. Thus, selective etching of the ZnSe, ZnTe, ZnSSe or Zn.sub.1-a Mg.sub.a S.sub.b Se.sub.1-b layer can be conducted with excellent controllability and reproducibility.

Optoelectronic semiconductor laser device having compound semiconductor

An ohmic electrode to p-type II-VI compound semiconductor and its fabricating method are disclosed. The ohmic electrode comprises: a layer made of Pd or an alloy containing Pd; and a metal layer provided thereon. The fabricating method of an ohmic electrode comprises the steps of: providing a layer made of Pd or an alloy containing Pd on a p-type II-VI compound semiconductor layer; and providing a metal layer on the layer made of Pd or an alloy containing Pd. Light emitting devices such as a semiconductor laser and a light emitting diode which use the ohmic electrode as the p-side electrode are also disclosed.

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Kanagawa, Japan

Fumiyo Narui