Japan Display Inc.

Magnolia White Corporation

Fumiya Kimura

Isao Suzumura

Hitoshi Tanaka

Akihiro Hanada

Hajime Watakabe

Kazuhide Mochizuki

Ryo Onodera

Marina Mochizuki

Kenichi Akutsu

Atsuko Shimada

Junko Nagasawa

Atsuko Imoto

Toshiki Kaneko

A semiconductor device includes a substrate, an oxide semiconductor layer over the substrate, a gate insulating layer over the oxide semiconductor layer, a metal oxide layer over the gate insulating layer, and a gate electrode over the metal oxide layer. A first side surface of the metal oxide protrudes from a second side surface of the gate electrode in a plan view.

Semiconductor device having metal oxide layer with tapered side surface

The present invention provides a technology which realizes a reliable semiconductor device including a photosensor device by preventing pent roofs of edges of a Player from being generated and a metal wiring installed over the Player from coming down while securing the electrical conductivity of the Player. The semiconductor device includes a photosensor including a photodiode formed on a substrate. The photodiode includes: a cathode electrode; a laminated structure that is formed on the cathode electrode and in which an Nlayer, an I layer, and a Player are laminated in this order; an anode electrode formed on the Player; a first insulating film formed so as to cover a portion of the anode electrode and edges of the laminated structure; and a metal wiring connected to the anode electrode. The edges of the laminated structure are formed in forward tapered shapes in a cross-sectional view.

Semiconductor device and method of manufacturing semiconductor device

A display device is provided and includes a substrate on which a TFT is formed. The display device including an organic film formed on the TFT, the organic film having a through hole, and a first common electrode, an upper pixel electrode and a second common electrode which are stacked in this order above the organic passivation film, a filler being filled in the through hole, and wherein the upper pixel electrode is electrically connected with the TFT, and an edge of the upper pixel electrode is located directly on the filler.

Display device

According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer and a plurality of transparent conductive layers. The transparent conductive layers include a pixel electrode, a first conductive layer and a second conductive layer. The pixel electrode is in contact with the second conductive layer. The second conductive layer is in contact with the first conductive layer. The first conductive layer is brought into contact with a second region of the semiconductor layer through a first contact hole.

Display device and semiconductor device

According to one embodiment, a display device includes a signal line, a scanning line, a semiconductor layer, a first insulating layer which covers the semiconductor layer, a color filter above the first insulating layer, a pixel electrode above the color filter and a common electrode. The first insulating layer includes a first contact hole for connecting the semiconductor layer and the pixel electrode to each other. The first contact hole is provided at a position displaced from the color filter in plan view.

According to one embodiment, a display device includes a semiconductor layer, a first insulating layer, a gate electrode, a second insulating layer, a third insulating layer, a color filter, and transparent conductive layers including a pixel electrode, a first conductive layer, and a second conductive layer. The first conductive layer is located between the second insulating layer and the third insulating layer, and is in contact with a second area of the semiconductor layer. The second conductive layer is located on the color filter and is in contact with the first conductive layer. The pixel electrode is located on the second conductive layer and is in contact with the second conductive layer.

The purpose of the present invention is to obviate patterning defects of electrodes in through-holes formed in an organic passivation film for connection between TFTs and pixel electrodes in an ultra-high definition display device. To achieve the foregoing, the present invention has a configuration such as the following. This display device, in which a TFT (thin-film transistor) is formed on a substrate, an organic passivation film is formed covering the TFT, and a first pixel electrode, a first common electrode, a second pixel electrode, and a second common electrode are formed on the organic passivation film, is characterized in that the first pixel electrode is connected to the TFT via a through-hole formed in the organic passivation film, the through-hole is filled with a filler, and an end of the second pixel electrode is present on the upper side of the filler.

Growing community of inventors

Tokyo, Japan

Fumiya Kimura