Sharp Kabushiki Kaisha Corporation

Sharp Life Science (eu) Limited

Sharp Life Science Corporation

Fumitoshi Yasuo

Shinya Kadono Kadono

Kenichi Kitoh

Junichi Inukai

Takeshi Hara

Tomohiro Kosaka

Tomoko Teranishi

Yasumori Fukushima

Tohru Ueda

Akihiko Nakano

Hao Li

Chihiro Tachino

Juxian Li

Manabu Daio

Kayoko Mori

Shinya Kadono

A cell signal measurement electrode plate includes a first transistor including a gate terminal connected to a first selection line and a source terminal connected to a second selection line, a second transistor including a gate terminal connected to a drain terminal of the first transistor, a source terminal connected to an electrode, and a drain terminal connected to a common wiring line, and a first capacitor including one capacitance electrode connected to the drain terminal of the first transistor and another capacitance electrode connected to a capacitance element potential fixing wiring line.

Cell signal measurement electrode plate and information processing device provided with same

A liquid crystal device includes a first substrate (TFT substrate) including a first dielectric substrate, a second substrate (slot substrate) including a second dielectric substrate, a liquid crystal layer provided between the first substrate and the second substrate and in all of an effective region and a portion of a non-effective region, a sealing seal portion configured to define the maximum value of the area of the liquid crystal layer when viewed from a normal direction of the first or second dielectric substrate, a cell gap control seal portion configured to define the minimum value of the thickness of the liquid crystal layer in the effective region, and a buffer portion provided in contact with the liquid crystal layer in the non-effective region and that deforms more easily due to external force than the first and second dielectric substrates in the effective region. The buffer portion includes a sheet and a joining section that joins the sheet and the first or second dielectric substrate. The sheet deforms more easily due to external force than the first and second dielectric substrates in the effective region, and/or at least a portion of the joining section deforms more easily due to external force than the cell gap control seal portion.

Scanned antenna and liquid crystal device

Provided is a microfluidic device that, as compared with a conventional microfluidic device, (i) is smoother in surface of a water-repellent layer provided above a segment electrode and (ii) makes it easier for microfluid provided in the surface of the water-repellent layer to slide. A microfluidic device () includes: an array substrate () including a plurality of electrodes (); and a counter substrate () including at least one electrode (), the array substrate () and the counter substrate () having therebetween an internal space () in which to cause an electroconductive droplet () to move across the plurality of electrodes (), and the plurality of electrodes () being provided on a first flattening resin layer () and each being a light-blocking metal electrode.

Microfluidic device

A scanning antenna includes a TFT substrate including a plurality of patch electrodes, a slot substrate including a slot electrode, and a liquid crystal layer provided between the TFT substrate and the slot substrate. The slot electrode includes a plurality of slots disposed corresponding to the plurality of patch electrodes and a solid portion not including the plurality of slot. When viewed from a normal direction of the substrate, the patch electrode is disposed across the slot in a first direction and overlaps the solid portion at both ends of the slot in each of a plurality of antenna units, and when viewed from the normal direction of the substrate, at least one of a periphery of the solid portion and a periphery of the patch electrode includes a recessed portion or a protruding portion in at least one antenna unit of the plurality of antenna units.

Scanned antenna and method of inspecting scanned antenna

A TFT substrate includes a dielectric substrate and a plurality of antenna unit regions arranged on the dielectric substrate. Each of the plurality of antenna unit regions has a TFT and a patch electrode electrically connected to the drain electrode of the TFT. The patch electrode includes a first electrode layer formed of the same conductive film as the gate electrode of the TFT and a second electrode layer formed of the same conductive film as the source electrode of the TFT.

TFT substrate, scanned antenna having TFT substrate, and method for manufacturing TFT substrate

A scanning antenna including a transmission and/or reception region including a plurality of antenna units arranged in the transmission and/or reception region and a non-transmission and/or reception region includes a TFT substrate including a plurality of first TFTs supported by a first dielectric substrate and a plurality of patch electrodes, a slot substrate including a slot electrode including a plurality of slots, a liquid crystal layer provided between the TFT substrate and the slot substrate, and a plurality of inspection electrode sections disposed while not overlapping the plurality of antenna units when viewed from a normal direction of the first dielectric substrate. Each of a plurality of inspection electrode sections includes a second TFT supported by the TFT substrate and including a source electrode connected to the source bus line and a gate electrode connected to the gate bus line, a transparent electrode supported by the TFT substrate and connected to a drain electrode of the second TFT, and a slot electrode extending while opposing the transparent electrode with the liquid crystal layer interposed therebetween.

Scanning antenna, method for inspecting scanning antenna, and method for manufacturing scanning antenna

There is provided a microstructure producing method capable of achieving satisfactory uniformity and reproducibility of the growth position, size and density of a minute particle or thin line and materializing a semiconductor device which can reduce the cost through simple processes without using any special microfabrication technique and has superior characteristics appropriate for mass-production with high yield and high productivity as well as a semiconductor device employing the microstructure. An oxide film,having a region,of a great film thickness and a region,of a small film thickness are formed on the surface of a semiconductor substrate,. Next, a microstructure that is a thin line,made of silicon Si is selectively formed only on the surface of the small-film-thickness region,of the oxide film

Microstructure producing method capable of controlling growth position of minute particle or thin and semiconductor device employing the microstructure

A region on a surface side of a sample is irradiated with a Ga ion beam to form a first laminar portion having a thickness of 50-200 nm small enough to allow the transmission electron microscopic observation. While the sample is being heated within a transmission electron microscope, a process in which silicide is being formed is observed at the first laminar portion. Thereafter, a second laminar portion is formed in a thick region of the sample, similarly to the first laminar portion. Then, the first and second laminar portions are comparatively observed in a non-heated state with the transmission electron microscope. If observation results of the two laminar portions in the non-heated state are the same, a result of observing the first laminar portion during the heating is taken to represent a phenomenon in a bulk state. If observation results of the two laminar portions are different from each other, the result of observing the first laminar portion during the heating is taken to represent a unique phenomenon resulting from the heating of the sample in a thin film state. Thus, a transmission electron microscopic observation involving the simultaneous heat treatment is correctly carried out with a few samples.

Method for observing a reaction process by transmission electron

In an electron spectroscopy analyzer for obtaining an electron spectroscopy spectrum by applying to a sample an X-ray or electron beam from a first beam source and by analyzing the energy of secondary electrons emitted from the sample, an amount of energy shift of a reflected beam from the sample is obtained by applying a charging beam from second beam source, and a shift of the electron spectroscopy spectrum is corrected in accordance with the amount of energy shift. With this structure, a shift of a spectral line due to charges on the sample surface caused by the application of the X-ray or electron beam is corrected, thereby improving accuracy of the measurement of values and intensity of energy.

Growing community of inventors

Sakai, Japan

Fumitoshi Yasuo