Renesas Electronics Corporation

Fumitoshi Takahashi

Yotaro Goto

Takeshi Kamino

Tatsuya Kunikiyo

Hidenori Sato

The performances of a semiconductor device are improved. A semiconductor device has a transfer transistor and a photodiode. The photodiode has an n type semiconductor region, an ntype semiconductor region, and a second p type semiconductor region surrounded by a first p type semiconductor region of an interpixel isolation region. The ntype semiconductor region is formed on the main surface side of the semiconductor substrate, and the n type semiconductor region is formed under the ntype semiconductor region via the second p type semiconductor region. In the channel length direction of the transfer transistor, in the n type semiconductor region, an ntype semiconductor region having a lower impurity density than that of the n type semiconductor region is arranged, to improve the transfer efficiency of electric charges accumulated in the photodiode.

Semiconductor device and a manufacturing method thereof

In order to improve the performance of a solid-state imaging device, the solid-state imaging device has a pixel including a photoelectric conversion unit and a transfer transistor, and fluorine is introduced to a gate electrode and a drain region (extension region and n-type semiconductor region) of the transfer transistor included in the pixel.

Solid-state imaging device and its manufacturing method

A reduction is achieved in the power consumption of a solid-state imaging element including a photoelectric conversion element which converts incident light to charge and a transistor which converts the charge obtained in the photoelectric conversion element to voltage. A photodiode and a charge read transistor which are included in a pixel in the CMOS solid-state imaging element are provided in a semiconductor substrate, while an amplification transistor included in the foregoing pixel is provided in a semiconductor layer provided over the semiconductor substrate via a buried insulating layer. In the semiconductor substrate located in a buried insulating layer region, a p-type back-gate semiconductor region for controlling a threshold voltage of the amplification transistor is provided.

Growing community of inventors

Ibaraki, Japan

Fumitoshi Takahashi