Micron Technology Incorporated

Fumitomo Watanabe

Keiyo Kusanagi

Masanori Yoshida

Mitsuhisa Watanabe

Semiconductor device assemblies with molded support substrates and associated methods are disclosed herein. In one embodiment, a semiconductor device assembly includes a support substrate, a first semiconductor die embedded within the support substrate, a second semiconductor die coupled to the support substrate, and a third semiconductor die coupled to the support substrate. The assembly can also include a redistribution network formed on a first and/or second side of the support substrate, and a plurality of conductive contacts electrically coupled to at least one of the first, second or third semiconductor dies.

Semiconductor device assemblies with molded support substrates

Several aspects of the present technology are directed toward fan-out packaged semiconductor devices having an integrated shield. The shield can include a conductive wall and a conductive cap over a redistribution structure. The shield can surround or at least partially enclose circuits placed or formed on the redistribution structure. The circuits and/or the conductive cap can be covered by an encapsulant, and the conductive cap can be on an upper surface of an encapsulant.

Shielded fan-out packaged semiconductor device and method of manufacturing

Stacked semiconductor die assemblies with die substrate extensions are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first die mounted to the package substrate, and a second die mounted to the first die. The first die includes a first die substrate, and the second die includes a second die substrate attached to the first die substrate. At least one of the first and second dies includes a semiconductor substrate and a die substrate extension adjacent the semiconductor substrate. The die substrate extension comprises a mold material that at least partially defines a planform.

Stacked semiconductor die assemblies with die substrate extensions

Several aspects of the present technology are directed toward fan-out packaged semiconductor devices having an integrated shield to protect against electromagnetic interference and methods of manufacturing such devices. The shield can be constructed by forming a conductive wall on a redistribution structure and disposing a conductive cap on an upper surface of an encapsulant. The conductive wall and the conductive cap are electrically connected to each other. By forming the conductive wall directly on the redistribution structure and separately disposing the conductive cap onto an upper surface of the encapsulant, an electromagnetic shield can be readily formed using wafer-level or panel-level processing techniques that are efficient and cost-effective. Several embodiments of semiconductor devices in accordance with the present technology accordingly shield the integrated circuitry of semiconductor dies from electromagnetic interference.

Semiconductor device assemblies with molded support substrates and associated methods are disclosed herein. In one embodiment, a semiconductor device assembly includes a support substrate formed from a molded material, a first semiconductor die at least partially embedded within the support substrate, a plurality of interconnects extending at least partially through the molded material, a second semiconductor die coupled to the support substrate, and a third semiconductor die coupled to the support substrate. The assembly can also include a redistribution network formed on a first and/or second side of the support substrate, and a plurality of conductive contacts electrically coupled to at least one of the first, second and third semiconductor dies.

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Akita, Japan

Fumitomo Watanabe