Semiconductor Energy Laboratory Co., Ltd.

Fumito Isaka

Sho Kato

Akihisa Shimomura

Shunpei Yamazaki

Junpei Momo

Hisao Ikeda

Yasuhiro Jinbo

Koji Dairiki

Satoshi Toriumi

Ryu Komatsu

Kosei Nei

Hidekazu Miyairi

Junya Maruyama

Tetsuya Kakehata

Masaki Koyama

Jiro Nishida

Hideto Ohnuma

Hiromichi Godo

Tatsuya Mizoi

Koichiro Tanaka

Tetsuhiro Tanaka

Yuji Egi

Eiji Higa

Yoshikazu Hiura

Takashi Hirose

Masahiro Takahashi

Yu Arita

Shuntaro Kochi

A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and is located between the first conductor and the second conductor; a sixth insulator over the fifth insulator; a seventh insulator over the sixth insulator, and a third conductor over the seventh insulator. The third conductor includes a region overlapping with the oxide, the fifth insulator has a region that is in contact with each of the oxide, the first conductor, the second conductor, and the first to fourth insulators, and the sixth insulator contains hydrogen, nitrogen, oxygen, and silicon.

Semiconductor device and manufacturing method of semiconductor device

A novel display panel that is highly convenient, useful, or reliable is provided. The display panel includes a display region and includes a first pixel, a second pixel, a third pixel, and a filter. The first pixel emits light with a spectrum having a local maximum at a first wavelength, the second pixel emits light with a spectrum having a local maximum at a second wavelength, and the third pixel emits light with a spectrum having a local maximum at a third wavelength. The filter includes a region overlapping with the first pixel, a region overlapping with the second pixel, and a region overlapping with the third pixel, and the filter has a transmittance spectrum having local minimums at a fourth wavelength and a fifth wavelength. The second wavelength is longer than the first wavelength. The third wavelength is longer than the second wavelength. The fourth wavelength is between the first wavelength and the second wavelength. The fifth wavelength is between the second wavelength and the third wavelength.

Display panel, display device, input/output device, data processing device

A display device includes a display panel and a control portion. The control portion has a function of receiving image data, and a function of generating and supplying first data and second data on the basis of the image data. The display panel includes a pixel and an optical element. The pixel includes a first display element and a second display element. The second display element includes a region adjacent to the first display element. The optical element includes a first region overlapping with the second display element. The first region has a function of directing light which enters a region overlapping with the second display element to the first display element. The first display element is a reflective display element. The second display element is a light-emitting element.

Display device, input/output device, and data processing device

To display a high-quality video regardless of a usage environment. To provide a display device which is lightweight and less likely to be broken. To reduce power consumption of the display device. The display device includes a first display element, a first transistor connected to the first display element, a second display element, and a second transistor connected to the second display element. The first display element is a reflective display element. The first display element and the first transistor are bonded to the second display element and the second transistor with an adhesive layer. Light from the second display element is extracted to the display surface on the first display element side. The light is condensed or guided by a light-condensing means or a light-guiding means provided in a path of the light from the second display element to the display surface.

Display device including light-emitting element and light-condensing means

A light extraction efficiency is increased in a display device having a plurality of display elements. The display device includes a first display element and a second display element over the first display element, and the first display element has a convex-concave shape. The convex-concave shape overlaps with a first opening provided in a reflective electrode of the second display element. A user can see an image that combines the display from the first display element and the display from the second display element. The convex-concave shape increases the light extraction efficiency of the first display element. The second display element is electrically connected to a transistor through a second opening provided in any layer of the first display element. The second display element can be provided close to the first display element.

Display device

A photoelectric conversion device in photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance on a back electrode side is provided between the back electrode and the crystalline silicon substrate, The light-transmitting conductive film includes an organic compound and an inorganic compound. The organic compound includes 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine. The inorganic compound includes an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table.

Photoelectric conversion device

It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6&#xd7;10/&#xb0; C. to 38&#xd7;10/&#xb0; C., preferably 6&#xd7;10/&#xb0; C. to 31.8&#xd7;10/&#xb0; C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is &#x2212;500 N/m to +50 N/m, preferably &#x2212;150 N/m to 0 N/m after the heating step.

Semiconductor device

An object is to provide a photoelectric conversion device which has little loss of light absorption in a window layer and has high conversion efficiency. A photoelectric conversion device including a crystalline silicon substrate having n-type conductivity and a light-transmitting semiconductor layer having p-type conductivity between a pair of electrodes is formed. In the photoelectric conversion device, a p-n junction is formed between the crystalline silicon substrate and the light-transmitting semiconductor layer, and the light-transmitting semiconductor layer serves as a window layer. The light-transmitting semiconductor layer includes an organic compound and an inorganic compound. As the organic compound and the inorganic compound, a material having a high hole-transport property and a transition metal oxide having an electron-accepting property are respectively used.

A photoelectric conversion device has a structure that includes a first amorphous silicon layer and a second amorphous silicon layer that are in contact with a single crystalline silicon substrate, and a first microcrystalline silicon layer with one conductivity type and a second microcrystalline silicon layer with a conductivity type that is opposite the one conductivity type that are in contact with the first and second amorphous silicon layers, respectively. The first and second microcrystalline silicon layers are formed using a plasma CVD apparatus that is suitable for high pressure film formation conditions.

Manufacturing method of photoelectric conversion device

A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.

Method for manufacturing semiconductor device

An object is to provide a photoelectric conversion element with high conversion efficiency. In a photoelectric conversion element with a fine periodic structure on a light-receiving surface side, focus is given to the traveling direction of light that is reflected off another surface. The photoelectric conversion element may be given a structure in which a textured structure that reflects light to the other surface is provided, and light that travels from the light-receiving surface side to the other surface side is reflected so that a component that travels along the photoelectric conversion layer increases. By the distance traveled by the reflected light inside the photoelectric conversion layer increasing, the light that enters the photoelectric conversion element is more easily absorbed by the photoelectric conversion layer and less easily released from the light-receiving surface side, and a photoelectric conversion element with high conversion efficiency can be provided.

Photoelectric conversion element

A photoelectric conversion device including a single crystal silicon substrate; a first amorphous silicon layer in contact with a surface (a light-receiving surface) of the single crystal silicon substrate; a first polarity (p-type) impurity diffusion layer in contact with the first amorphous silicon layer; a second amorphous silicon layer in contact with a back surface of the single crystal silicon substrate; and a second polarity (n-type) impurity diffusion layer in contact with the second amorphous silicon layer, in which the first and second polarity impurity diffusion layers are microcrystalline silicon layers formed under a deposition condition where a pressure in a reaction chamber is adjusted to be greater than or equal to 450 Pa and less than or equal to 10000 Pa is provided.

Photoelectric conversion device and manufacturing method thereof

A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.

Method of manufacturing photoelectric conversion device

A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved.

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Zama, Japan

Fumito Isaka