Nitto-denko Corporation

Fumiteru Asai

Naohide Takamoto

Goji Shiga

Yuji Hotta

Miho Yamaguchi

Tomokazu Takahashi

Toshio Shintani

Yoshio Terada

Ichiro Suehiro

Akiyoshi Yamamoto

Takashi Habu

Toshimasa Sugimura

Hirokuni Hashimoto

Takeshi Matsumura

Sadahito Misumi

Masao Abe

Keisuke Kii

Masakatsu Urairi

Kazuyuki Kiuchi

Eiichi Imoto

Shuhei Murata

Yutaka Kishii

Yutaka Yamamura

Yuta Shimazaki

Kouji Akazawa

Yuji Okawa

Yusuke Komoto

Kouichi Hashimoto

Akinori Nishio

Kazuhiro Aoyagi

Syouji Yamamoto

Takatoshi Sasaki

Masato Noro

Koji Mizuno

Tsubasa Miki

Noriyoshi Kawashima

Keiko Maekawa

The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface including an adhesive layer and a protective layer laminated on the adhesive layer, in which the protective layer is constituted of a heat-resistant resin having a glass transition temperature of 200&#xb0; C. or more or a metal.

Film for flip chip type semiconductor back surface and its use

The present invention relates to a film for semiconductor device production, which includes: a separator; and a plurality of adhesive layer-attached dicing tapes each including a dicing tape and an adhesive layer laminated on the dicing tape, which are laminated on the separator at a predetermined interval in such a manner that the adhesive layer attaches to the separator, in which the separator has a cut formed along the outer periphery of the dicing tape, and the depth of the cut is at most &#x2154; of the thickness of the separator.

Film for semiconductor device production, method for producing film for semiconductor device production, and method for semiconductor device production

The present invention provides a dicing tape-integrated film for semiconductor back surface, including a film for flip chip type semiconductor back surface for protecting a back surface of a semiconductor element flip chip-connected onto an adherend, and a dicing tape, the dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material, the film for flip chip type semiconductor back surface being formed on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer whose pressure-sensitive adhesive force toward the film for flip chip type semiconductor back surface is decreased by irradiation with a radiation ray.

Dicing tape-integrated film for semiconductor back surface

An object of the present invention is to provide a method of manufacturing a flip-chip type semiconductor device with a simplified process, in which various types of information are supplied in a visually recognizable manner. The present invention relates to a method of manufacturing a flip-chip type semiconductor device comprising: a step A of laminating on a semiconductor wafer a film for the backside of a flip-chip type semiconductor, in which the film is to be formed on the backside of a semiconductor element that is flip-chip connected onto an adherend; a step B of dicing the semiconductor wafer; and a step C of laser marking the film for the backside of a flip-chip type semiconductor, wherein the film for the backside of a flip-chip type semiconductor in the step C is uncured.

Method of manufacturing flip-chip type semiconductor device

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, in which the film for flip chip type semiconductor back surface before thermal curing has, at the thermal curing thereof, a volume contraction ratio within a range of 23&#xb0; C. to 165&#xb0; C. of 100 ppm/&#xb0; C. to 400 ppm/&#xb0; C.

Film for flip chip type semiconductor back surface, dicing tape-integrated film for semiconductor back surface, process for producing semiconductor device, and flip chip type semiconductor device

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface containing an inorganic filler in an amount within a range of 70% by weight to 95% by weight based on the whole of the film for flip chip type semiconductor back surface.

The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm.

Dicing tape-integrated film for semiconductor back surface, and process for producing semiconductor device

The present invention relates to a thermally releasable sheet-integrated film for semiconductor back surface, which includes: a pressure-sensitive adhesive sheet including a base material layer and a pressure-sensitive adhesive layer, and a film for semiconductor back surface formed on the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet, in which the pressure-sensitive adhesive sheet is a thermally releasable pressure-sensitive adhesive sheet whose peel force from the film for semiconductor back surface decreases upon heating.

Thermally releasable sheet-integrated film for semiconductor back surface, method of collecting semiconductor element, and method of producing semiconductor device

The present invention provides a dicing tape-integrated film for semiconductor back surface including: a dicing tape including a base material and a pressure-sensitive adhesive layer on the base material; and a film for flip chip type semiconductor back surface, which is provided on the pressure-sensitive adhesive layer, in which at least a part of the pressure-sensitive adhesive layer has been cured beforehand by irradiation with a radiation ray.

The present invention provides a pressure-sensitive adhesive sheet for protecting a semiconductor wafer, which does not cause curve (warpage) in the semiconductor wafer, when the semiconductor wafer is ground, is excellent in followability to a pattern, has adequate stress dispersibility in a grinding operation, suppresses the crack in a wafer and chipping in a wafer edge, and does not leave a residue of a tackiness agent on the surface of the wafer. The protective sheet has one face having tackiness, does not have an interface existing between a substrate and the tackiness agent and is made of one layer, and the pressure-sensitive adhesive sheet has different tack strengths on both faces from each other.

Pressure-sensitive adhesive sheet for protecting semiconductor wafer

The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on the back surface of a semiconductor element to be flip chip-connected onto an adherend, the film containing a resin and a thermoconductive filler, in which the content of the thermoconductive filler is at least 50% by volume of the film, and the thermoconductive filler has an average particle size relative to the thickness of the film of at most 30% and has a maximum particle size relative to the thickness of the film of at most 80%.

Film for flip chip type semiconductor back surface containing thermoconductive filler

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film having a light transmittance at a wavelength of 532 nm or 1064 nm of 20% or less, and having a contrast between a marking part and a part other than the marking part after laser marking of 20% or more.

Growing community of inventors

Osaka, Japan

Fumiteru Asai