Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Fumitaka Tametani

Takahiro Inoue

Rei Yoneyama

Shinji Hatae

Shiori Uota

Ken Takanashi

Hiroshi Yoshida

Gourab Majumdar

Manabu Matsumoto

Akihisa Yamamoto

Kazuaki Hiyama

Takashi Igarashi

Mitsutaka Iwasaki

Toru Iwagami

Takao Tsurimoto

Khalid Hassan Hussein

Hiroki Shiota

Teruaki Nagahara

Kenichi Morokuma

Shoichi Orita

Seiichi Oshima

Motonobu Joko

Kenichi Suga

Haruhiko Takemoto

Jun Yamagata

The present invention relates to a semiconductor device and it is an object of the present invention to provide a semiconductor device that makes it easy to change a specification on driving of a power semiconductor element or control of a protection operation thereof. The semiconductor device includes a power semiconductor element, a main electrode terminal of the power semiconductor element, a sensor section that emits a signal corresponding to a physical state of the power semiconductor element, a sensor signal terminal connected to the sensor section, a drive terminal that supplies power to drive the power semiconductor element and a case that accommodates the power semiconductor element, the main electrode terminal, the sensor section, the sensor signal terminal and the drive terminal, and the sensor signal terminal and the drive terminal are provided so as to be connectable from outside the case.

Semiconductor device, intelligent power module and power conversion apparatus

A life estimation circuit includes a temperature detector configured to detect temperature of a power element unit, an inflection point detection unit configured to detect an inflection point of temperature variation in the power element unit based on an output signal from the temperature detector, an operation unit configured to determine an absolute value of a difference between the temperature of the power element unit at an inflection point detected this time and the temperature of the power element unit at an inflection point detected last time, a count circuit configured to count the number of times that the absolute value of the difference in temperature has reached a threshold temperature, and a signal generation unit configured to output, when a count value from the count circuit reaches a threshold number of times, an alarm signal indicating that the power element is about to reach the end of its life.

Life estimation circuit and semiconductor device made using the same

A signal transmission insulating device includes: a first coil; a second coil opposing the first coil to form a transformer together with the first coil; a first insulating film provided between the opposing first coil and second coil and made of a first dielectric material; a second insulating film surrounding the first coil and made of a second dielectric material having a lower resistivity or a higher permittivity than the first dielectric material; and a third insulating film surrounding the second coil and made of a third dielectric material having a lower resistivity or a higher permittivity than the first dielectric material.

Signal transmission insulative device and power semiconductor module

A life prediction wireis connected to an emitter-wire bonding padof a semiconductor device. Wire deterioration is detected by checking whether or not an electric current flows from the life prediction wireto the emitter-wire bonding pad. Thus, by directly checking a deterioration state of the semiconductor device, the life of the semiconductor device is predicted.

Semiconductor device, and life prediction circuit and life prediction method for semiconductor device

A display panel for displaying an image, a drive circuit for driving the display panel and a rear plate for supporting the display panel are provided. The drive circuit includes a circuit board fixed on the rear plate, semiconductor devices surface-mounted on the circuit board to be connected to a plurality of electrodes formed on the display panel and radiator plates attached to the other surfaces of the semiconductor devices opposite to the surfaces mounted on the circuit board so as to be almost in parallel with the rear plate.

Flat panel display and semiconductor device for use therein

A power module is provided with an insulating substrate with a heat sink being bonded to one surface thereof and a circuit pattern being formed on the other surface. The circuit pattern is formed by an electrode layer. A switching semiconductor element and a free wheeling diode that is connected to a switching semiconductor element in anti-parallel therewith are placed on the circuit pattern. A controlling IC for controlling the switching semiconductor element is placed on the free wheeling diode. Thus, it is possible to make the entire power module compact, and it becomes possible to provide an inexpensive power module which can prevent the controlling IC from malfunctioning due to heat generated by the switching semiconductor element.

Power module

To prevent malfunction or breakdown due to a surge voltage in a power converter for converting DC into AC or the like so as to supply electric power to a load, not only a control signal is transmitted via a level shift circuit which is provided correspondingly to each of switching semiconductor elements forming a main circuit and shifts a level of a reference potential at its output side so as to follow variations of a reference potential of the switching semiconductor element to the switching semiconductor element, but a DC control power source for supplying electric power to the level shift circuit and a negative pole of the switching semiconductor element are connected to each other through at least one of an inductor and a resistance.

Power converter

In a circuit board having four-layered conductive pattern on which a control circuit is arranged, wiring sub-patterns 133a in the first layer are divided into four areas A1-A3 and A8, for respective sets of circuit parts having same power potentials. Respective sub-patterns belonging to the areas A1-A3 are partially or fully surrounded by wiring sub-patterns PEa1 PEa3 connected to negative power potentials of circuit parts belonging to respective areas, respectively. Similarly, at least part of a wiring patten Pa2 for transmitting an input signal to a semiconductor active element is surrounded by a wiring pattern PEa4. Penetration of electric noises to the wiring patterns for the control circuit, in particular to the wiring pattern for transmitting the input signal to semiconductor element, is decreased to thereby prevent misoperation due to electric noises.

Noise resistant semiconductor power module

Growing community of inventors

Tokyo, Japan

Fumitaka Tametani