Sharp Kabushiki Kaisha Corporation

Fumio Yamashita

Mototaka Taneya

Shigetoshi Ito

Toshiyuki Kawakami

Kunihiro Takatani

Susumu Ohmi

Shuichiro Yamamoto

In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.

Nitride semiconductor laser chip and fabrication method thereof

On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.

Nitride semiconductor laser element and fabrication method thereof

Growing community of inventors

Nara, Japan

Fumio Yamashita