Kabushiki Kaisha Toshiba

Nichia Corporation

Toshiba Hokuto Electronics Corporation

Toshiba Tungaloy Co., Ltd.

Fumio Ueno

Akihiro Horiguchi

Mitsuo Kasori

Hiroyasu Sumino

Yoshiko Goto

Motomasa Imai

Naoki Shutoh

Katsuyoshi Oh-Ishi

Kazuo Shinozaki

Akihiko Tsuge

Mituo Kasori

Kairi Makita

Hiroshi Endo

Hiroshi Inoue

Mitsuyoshi Endo

Hiroshi Komorita

Kazuo Kimura

Kazuo Anzai

Takeshi Takano

Jun Monma

Naoki Takojima

Hiroshi Imagawa

Hideki Sato

Masaki Kobayashi

Iwao Mitsuishi

Nobuyuki Mizunoya

Shun-ichiro Tanaka

Masaru Hayashi

Hideyasu Andoh

Shoji Kozuka

Hideo Ohkuma

Yoshiko Sato

Naoki Shuto

Ashraf Uddin

Yuji Katsumura

Toshiyuki Takahashi

A light emitting device, according to the present embodiment, has a light emitting panel, a flexible wiring substrate, a mold resin and a protective tape. The light emitting panel has a first substrate, which is transparent to light, a plurality of conductor patterns, which are formed on a surface of the first substrate, a plurality of light emitting elements, which are connected to any of the conductor patterns, and a resin layer, which holds the light emitting elements on the first substrate. The flexible wiring substrate has a circuit pattern that is electrically connected with an exposed part of the conductor patterns. The mold resin covers the exposed part of the conductor patterns and an exposed part of the circuit pattern. The protective tape covers the mold resin, and is wound around a joint part of the light emitting panel and the flexible wiring substrate.

Light emitting device, method of manufacturing light emitting device, and lighting tool for vehicle

A light-emitting device according to an embodiment is provided with: a light-emitting panel including a first board that is light transmissive and flexible, a plurality of conductor patterns formed on a surface of the first board, a plurality of light-emitting elements connected to one of the conductor patterns, and a second board that is light transmissive and flexible and that holds the light-emitting elements relative to the first board; and a flexible wiring board including a circuit pattern that is electrically connected via an anisotropic conductive layer to an exposed part of the conductor patterns formed on the first board, the exposed part being exposed by the end of the second board.

Light emitting device, and method for manufacturing light emitting device

Disclosed are a circuit substrate which comprises a silicon nitride ceramic plate 1 having a thermal conductivity at room temperature of 80 W/mK or more and a metal plate 2 joined to the silicon nitride ceramic plate 1 through a glass layer 3, and a semiconductor device in which the circuit substrate is mounted.

Silicon nitride ceramic circuit substrate and semiconductor device using

Disclosed is a silicon nitride circuit substrate, a manufacturing procee thereof, and a semiconductor device therewith. The circuit substrate comprises: a silicon nitride substrate; a metal circuit plate; and a intermediate layer being interposed between the silicon nitride board and the metal circuit plate for joining the silicon nitride substrate and the metal circuit plate, and having a compound containing an aluminum oxide component. The concentration of the aluminum oxide component in the intermediate layer is higher in the side of the metal circuit plate than in the side of the silicon nitride board.

Silicon nitride circuit substrate and semiconductor device containing

Disclosed are a high thermal conductivity silicon nitride circuit substrate which comprises a silicon nitride ceramic plate having a thermal conductivity at 25.degree. C. of 60 W/m.multidot.K or more and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least one element selected from the group consisting of titanium, zirconium, hafnium, niobium and aluminum, and a semiconductor device using the same.

High thermal conductivity silicon nitride circuit substrate and

A circuit board having at least one insulator layer and at least one conductor layer which includes at least one of the whole insulator layers in a sintered body containing .beta.-Si.sub.3 N.sub.4 as a main component and at least one element selected from the group consisting of a rare earth element and an alkaline earth element, and at least one of the whole conductor layers contains at least one element selected from the group of IVb, Vb and VIb group of the periodic table, and at least one element selected from the group of a rare earth element and an alkaline earth element, and a Si element.

Circuit board with high strength and high reliability and process for

Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.

Sintered aluminum nitride and circuit substrate using sintered aluminum

Disclosed is a power resistor which has a large heat capacity per unit volume and an appropriate and stable electrical resistance, and in which the resistance changes little with time due to surge absorption. This power resistor includes a sintered body containing aluminum oxide and carbon, and a pair of electrodes formed on the two opposing surfaces of the sintered body. This sintered body consists of first regions containing a small amount of carbon or not containing carbon and second regions containing a larger amount of carbon than in the first regions and so arranged as to be connected to the electrodes.

Power resistor, method of manufacturing the same, and power circuit

Disclosed is a circuit substrate and a semiconductor device to which the circuit substrate is applied. The circuit substrate has an insulating layer and an electrically conductive layer. The insulating layer is composed of a sintered aluminum nitride composition containing: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of group IIa elements and group IIIa elements of the periodic table; a second component given by either a simple boron or a boron compound; and a third component give by either a simple manganese or a manganese compound. The electrically conductive layer contains: a conductive component given by a metal or an electrically conductive compound for exhibiting electric conductivity; aluminum nitride; the first component; the second component; and the third component. The semiconductor device has the above circuit substrate, a semiconductor element mounted on the circuit substrate, and a cap being tightly bonded to the circuit substrate with a sealing glass to cover the semiconductor element.

Circuit substrate including insulating layer of aluminum nitride and

A radiation detector includes a photodiode composed of an .alpha.-SiC substrate of a first conductivity type, a first .alpha.-SiC layer of the first conductivity type epitaxially formed on the .alpha.-SiC substrate, a second .alpha.-SiC layer of a second conductivity type having higher carriers concentration than the first .alpha.-SiC layer and epitaxially formed on the first .alpha.-SiC layer, a first electrode formed on the .alpha.-SiC substrate in ohmic contact, and a second electrode formed on the second .alpha.-SiC layer in ohmic contact; and a phosphor layer disposed on the photodiode to emit ultraviolet-rays by exposure of radiations.

Radiation detector

A metal oxide resistor for suppressing variations in resistivity in use in an atmosphere at a high temperature or humidity. Such a metal oxide resistor includes a sintered body in which carbon particles having an average grain size of 1 .mu.m or less exist in the grain boundaries of metal oxide particles in an amount of 0.05 to 3 wt %, and electrodes formed on at least two opposing surfaces of the sintered body.

Metal oxide resistor, power resistor, and power circuit breaker

Disclosed is an aluminum nitride sintered body which has a high thermal conductivity and a high strength and which can be manufactured through low-temperature, short-time sintering. This aluminum nitride sintered body has an average grain size of aluminum nitride grains of 2 .mu.m or less, a thermal conductivity of 80 W/m.K or more, and a relative density of 98% or more.

Method for manufacturing an aluminum nitride sintered body

Aluminum nitride sintered body, method for manufacturing the same, and

A compact power circuit breaker having a large breaking capacity and stable breaking performance by using a compact closing resistor unit having high performance. The power circuit breaker includes a main switch arranged in a current path, an auxiliary switch connected to the current path parallel with respect to the main switch and turned on prior to an ON state of the main switch, and a closing resistor unit connected in series with the auxiliary switch and incorporated with a resistor having a sintered body consisting of a Zn--Ti--Co--O--based oxide and having metal components consisting of titanium calculated as titanium oxide (TiO.sub.2) in an amount of 0.5 to 25 mol %, cobalt calculated as cobalt oxide (CoO) in an amount of 0.5 to 30 mol %, and Zn as substantially the balance.

Power circuit breaker and power resistor

Growing community of inventors

Yokohama, Japan

Fumio Ueno