Fuji Chemical Company, Limited

Canon Kabushiki Kaisha

National Institute for Materials Science

Fuji Kagaku Corporation

Kyocera Corporation

Public University Corporation Nagoya City University

Nagoya City University

Fumio Uchida

Chiemi Shimizu

Makoto Kubota

Kenji Maeda

Motokazu Kobayashi

Shinji Eritate

Hisato Yabuta

Satoshi Kawanaka

Takanori Matsuda

Kanako Oshima

Miki Ueda

Junpei Yamanaka

Akiko Toyotama

Hiroki Imai

Kenji Takashima

Mikio Shimada

Hisao Suzuki

Hiroshi Fudoji

Tsutomu Sawada

Sachiko Onda

Seiichi Furumi

Jumpei Hayashi

Yoshinori Kotani

Yoshihiro Ohashi

Toshiya Yuasa

Minako Nakasu

Keiko Abe

Naoyuki Koketsu

Yuji Nakano

Tohru Okuzono

Masakatsu Yonese

Masaaki Yamamoto

Yoshiyuki Kawasumi

Mariko Shinohara

Koki Yoshizawa

Tooru Okuzono

A piezoelectric material includes: an oxide containing Na, Ba, Nb, Ti, and Mn, in which the oxide has a perovskite-type structure, a total amount of metal elements other than Na, Ba, Nb, Ti, and Mn contained in the piezoelectric material is 0.5 mol % or less with respect to a total amount of Na, Ba, Nb, Ti, and Mn, a molar ratio x of Ti to a total molar amount of Nb and Ti is 0.05&#x2264;x&#x2264;0.12, a molar ratio y of Na to Nb is 0.93&#x2264;y&#x2264;0.98, a molar ratio z of Ba to Ti is 1.09&#x2264;z&#x2264;1.60, a molar ratio m of Mn to the total molar amount of Nb and Ti is 0.0006&#x2264;m&#x2264;0.0030, and 1.07&#x2264;y&#xd7;z&#x2264;1.50 is satisfied.

Piezoelectric material, piezoelectric element, and electronic equipment

A lead-free piezoelectric material includes perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg and indicates excellent piezoelectric properties. The piezoelectric material satisfies the following relational expression (1): 0.430&#x2264;a&#x2264;0.460, 0.433&#x2264;b&#x2264;0.479, 0.040&#x2264;c&#x2264;0.070, 0.0125&#x2264;d&#x2264;0.0650, 0.0015&#x2264;e&#x2264;0.0092, 0.9&#xd7;3e&#x2264;c&#x2212;d&#x2264;1.1&#xd7;3e, a+b+c+d+e=1, where a, b, c, d, and e denote the relative numbers of Na, Nb, Ba, Ti, and Mg atoms, respectively.

Provided is a lead-free piezoelectric material reduced in dielectric loss tangent, and achieving both a large piezoelectric constant and a large mechanical quality factor. A piezoelectric material according to at least one embodiment of the present disclosure is a piezoelectric material including a main component formed of a perovskite-type metal oxide represented by the general formula (1): Na(BiBa)NbTiO(where 0.84&#x2264;x&#x2264;0.92, 0.84&#x2264;y&#x2264;0.92, 0.002&#x2264;(w+s)(1&#x2212;y)&#x2264;0.035, and 0.9&#x2264;w/s&#x2264;1.1), and a Mn component, wherein the content of the Mn is 0.01 mol % or more and 1.00 mol % or less with respect to the perovskite-type metal oxide.

Provided is a coating liquid for forming a piezoelectric thin film containing lead zirconate titanate, the coating liquid including a complex precursor containing at least three kinds of metal elements of Pb, Ti, and Zr, the coating liquid being free from an exothermic peak at a temperature of 450&#xb0; C. or more, or having a heat generation amount at a temperature of from 400&#xb0; C. to 450&#xb0; C., which is larger than a heat generation amount at a temperature of from 450&#xb0; C. to 500&#xb0; C., in differential thermal analysis of the coating liquid.

Coating liquid for forming piezoelectric thin film, method of producing coating liquid for forming piezoelectric thin film, piezoelectric thin film, method of manufacturing piezoelectric thin film, and liquid ejection head

Provided is use of an oriented piezoelectric film including of a perovskite-type crystal represented by the following general formula (1): BaCaTiZrO(0&#x2264;x&#x2264;0.2, 0&#x2264;y&#x2264;0.2) (1). The oriented piezoelectric film is formed on an oriented underlayer oriented in a (111) plane and contains first crystals oriented in the (111) plane with respect to a film surface and randomly oriented second crystal grains. The first crystal grains have an average grain diameter of from 300 nm to 600 nm and the second crystal grains have an average grain diameter of from 50 nm to 200 nm.

Oriented piezoelectric film and method of manufacturing same, and liquid ejection head

[Problem] To provide a method for producing a colloidal crystal, wherein the method is easily controlled and is capable of dealing with a wide range of types of colloidal particle. [Solution] The method for producing a colloidal crystal in the present invention is characterized by comprising a preparation step of preparing a colloidal dispersion liquid, in which colloidal particles are dispersed in a liquid comprising an ionic surfactant and a colloidal crystal can be formed due to temperature changes, and a crystallization step of formation of a colloidal crystal by changing the temperature of the colloidal dispersion liquid from a temperature region in which the colloidal crystal is not formed to a temperature region in which the colloidal crystal is formed.

Method for producing colloidal crystal and colloidal crystal

A sheet of colloidal crystals immobilized in resin exhibiting intense structural color and allowing easy observation thereof from squarely facing direction against the surface; and application thereof are provided. The sheet includes crystal domains comprising colloidal crystals immobilized in resin. The Bragg reflection intensity resulting from crystal domains according to back reflection spectrum measurement to the sheet surface satisfies the following conditions (1) and (2). (1) When elevation angle from the sheet surface is in a range of at least 60&#xb0; and less than 90&#xb0; and measurement is performed at a predetermined azimuth angle on the sheet surface, intensity is not 0 and (2) when elevation angle from the sheet surface is in the range of at least 60&#xb0; and less than 90&#xb0; and azimuth dependency on the sheet surface is measured, the intensity exhibits a maximum value at the predetermined azimuth angle.

Sheet of colloidal crystals immobilized in resin, method of displaying structural color using same, method for detecting unevenness distribution or hardness distribution of subject using same, and structural color sheet

Provided are: a sheet of colloidal crystals immobilized in resin exhibiting intense structural color, enabled to be observed easily from a squarely facing direction against a surface; and use thereof. The sheet of the present invention, assuming a direction perpendicular to part of a surface of a target area including partially the sheet surface is set as a specified axis, satisfies: (1) The target area includes plural inclined back-reflecting crystal-domains crystal domains having colloid particles immobilized in resin and including crystal lattice planes capable of Bragg-back reflecting at least some of components in a visible wavelength range of incident light having greater than 0 incident angle with the specified axis; and (2) By defining an azimuth angle around the specified axis, the inclined back-reflecting crystal-domains are so oriented that intensity of reflected light caused by Bragg back reflection varies depending on the azimuth angle of the incident light.

An epoxy resin composition is provided which includes a polycrystalline structure comprised of a plurality of monocrystalline structures. The plurality of monocrystalline structures are respectively comprised of a plurality of silicon oxide colloidal particles regularly aligned in epoxy resin. The plurality of silicon oxide colloidal particles are not contacted with each other. The mean distance between the silicon oxide colloidal particles adjacent to each other is less than 330 nm. The mean particle size of the plurality of silicon oxide colloidal particles is less than 290 nm. The concentration of the plurality of silicon oxide colloidal particles is 10-50% by mass. A relative permittivity of 4 or more is ensured. A method for producing the epoxy resin composition is provided. Building materials, ornaments and optical materials, each using the epoxy resin composition, are also provided.

Epoxy resin composition, and method for producing the same

Provided is a lead-free piezoelectric material having a satisfactory and stable piezoelectric constant and electric insulation property in a wide practical temperature range. Provided is a piezoelectric material, including a perovskite-type metal oxide represented by the following general formula (1) as a main component, the piezoelectric material containing Mn in a content of 0.01 part by weight or more and 0.80 part by weight or less with respect to 100 parts by weight of the perovskite-type metal oxide: (LiNaKBaBi)(TiFe) O. . . (1), where 0.800&#x2266;&#x3b1;&#x2266;0.999, 0&#x2266;&#x3b2;&#x2266;0.150, 0.001&#x2266;&#x3b3;&#x2266;0.050, &#x3b1;+&#x3b2;+&#x3b3;=1, 0&#x2266;x&#x2266;0.050, 0.045&#x2266;y&#x2266;0.450, 0.045&#x2266;z&#x2266;0.450, 0.450&#x2266;x+y+z&#x2266;0.500, and 0.980&#x2266;a&#x2266;1.020.

Piezoelectric material, piezoelectric element, multilayered piezoelectric element, liquid ejection head, liquid ejection apparatus, ultrasonic motor, optical equipment, vibration apparatus, dust removing apparatus, imaging apparatus, and electronic equipment

Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Bismuth iron oxide powder, manufacturing method for the bismuth iron oxide powder, dielectric ceramics, piezoelectric element, liquid discharge head, and ultrasonic motor

The present invention provides an acrylic resin composition containing a polycrystal of colloidal particles of silicon oxide in an acrylic resin that is formed by curing an acrylic monomer liquid at room temperature and/or an acrylic oligomer liquid at room temperature, wherein a mean distance between the colloidal particles in the polycrystal is 140 to 330 nm. The size of the single crystal that constitutes the polycrystal can be controlled by adjusting the content of silicon oxide and/or the additive amount of impurities. An architectural material, a fashion accessory, and an optical material are provided that are formed by using the acrylic resin composition.

Acrylic resin composition, method of manufacturing the same, and architectural material, fashion accessory, and optical material formed using the same

Provided is a process for producing colloidal crystals from which a large single crystal reduced in lattice defects and unevenness can be easily produced at low cost without fail. The process for colloidal crystal production comprises: preparing a colloidal polycrystal dispersion in which colloidal crystals precipitate at a given temperature (preparation step); introducing into a vessel The colloidal polycrystal dispersion in the state of containing fine colloidal polycrystals precipitated (introduction step); and melting the colloidal polycrystals and then recrystallizing the molten polycrystals (recrystallization step). The crystals thus obtained have fewer lattice defects and less unevenness than the original polycrystals.

Process for producing colloidal crystal and colloidal crystal

There are disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula PbLa(ZrTi)O(where 0&#x2266;x&#x3c;1, 0.05&#x2266;y&#x2266;1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

Growing community of inventors

Daito, Japan

Fumio Uchida