Showa Denko K.k.

Showa Denko Kabushiki Kaisha

Fumio Tsujino

Takanori Kido

Kagetaka Ichikawa

Masayuki Sanbayashi

Nobuo Uotani

The present invention can provide an abrasive composition for polishing a semiconductor device which composition contains water, microparticles of an abrasive, and a chelating agent, wherein the abrasive is cerium oxide; the microparticles of cerium oxide have an average particle size of 0.01-1.0 &mgr;m and which composition is used for suitably forming a shallow trench isolation structure in a well-controlled manner during planarization of a semiconductor device including element-isolated structure. The invention also provides a method for producing the semiconductor device by use of the abrasive composition.

Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same

A cerium oxide slurry for polishing comprising cerium oxide dispersed in water, wherein the slurry has a conductivity of about 30 c &mgr;S/cm or less when the cerium oxide concentration in the slurry is c wt. %. In order to adjust the conductivity to about 30 c &mgr;S/cm or less, cerium oxide is washed with deionized water.

Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry

A cerium oxide slurry for polishing comprising cerium oxide dispersed in water, wherein the slurry has a conductivity of about 30c &mgr;S/cm or less when the cerium oxide concentration in the slurry is c wt. %. In order to adjust the conductivity to about 30c &mgr;S/cm or less, cerium oxide is washed with deionized water.

A polishing-material composition, for polishing of LSI devices, which is a polishing-material composition comprising water and cerium oxide which has been surface-treated with a coupling agent, wherein the maximum value is no greater than about 5 &mgr;m and the average value is about 0.01-1.0 &mgr;m in the secondary particle size distribution of the cerium oxide. Also, a polishing method for LSI devices which employs the polishing-material composition.

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Shiojiri, Japan

Fumio Tsujino