Hitachi, Ltd.

Hitachi Microcomputer Engineering, Ltd.

Vlsi Engineering Corporation

Fumio Tsuchiya

Hideaki Takahashi

Minoru Fukuda

Toshimasa Kihara

June Sugiura

Kiyoshi Matsubara

Shiro Baba

Hideo Nakamura

Kouki Noguchi

Yoshimune Hagiwara

Takashi Tsukamoto

Shigeki Masumura

An electrically programmable read only memory is equipped with latch circuits for sequentially introducing series signals which are fed through external terminals. The converter includes sequentially operated switch elements and latch circuits in order to convert the series signals into parallel signals. The thus converter parallel signals are written simultaneously in a memory array via address decoder operated selection switch elements. According to this method, the writing operations into the memory array can be conducted at a high speed even when one writing operation is relatively long as a result of the parallel signal action.

Semiconductor memory

In a microprocessor, a minimum instruction code length is set to a predetermined number of bits (e.g. one byte) length. One feature of the invention is that an instruction set which can selectively expand the instruction code length at a unit of the predetermined number of bits is used. Another feature is that an operand addressing mode and a type of operation for an operand are designated by separate predetermined number of code bits which are coded in a common coding scheme so that an instruction decoder is shared by those codes.

Microprogram controlled microprocessor having a selectively expandable

An electrically programmable read only memory is equipped with latch circuits for sequentially introducing series signals which are fed through external terminals. The converter includes sequentially operated switch elements and latch circuits in order to convert the series signals into parallel signals. The thus converted parallel signals are written simultaneously in a memory array via address decoder operated selection switch elements. According to this method, the writing operations into the memory array can be conducted at a high speed even when one writing operation is relatively long as a result of the parallel signal action.

A data processing LSI constructing a microcomputer has an EPROM for changing a program. The EPROM can be accessed directly through the external terminals of the data processing LSI. The EPROM is statically operated when it is written with data by direct access. However, the statically operated EPROM consumes relatively high power. This power consumption by the EPROM is reduced by dynamically operating its read circuit, address decoder and so on. For example, the read circuit is constructed of a sense amplifier and a latch circuit, and the sense amplifier has its operation interrupted after the latch circuit has latched the read data. The address decoder is composed of a load MOSFET and address MOSFETs. The load MOSFET is caused to act as a precharge element in the dynamic operation and as an operation current feeding element in the static operation.

Semiconductor integrated circuit device with built-in memories

An electrically programmable read only memory is equipped with latch circuits for sequentially introducing series signals which are fed through external terminals. The converter includes sequentially operated switch elements and latch circuits in order to convert the series signals into parallel signals. The thus converted parallel signals are written simultaneously in a memory array via address decoder operated selection switch elements. According to this method, the writing operations into the memory array can be conducted at a high speed even when one writing operation is relatively long as a result of this parallel signal action.

A data processing LSI constructing a microcomputer has an EPROM for changing a program. The EPROM can be accessed directly through the external terminals of the data processing LSI. The EPROM is statically operated when it is written with data by direct access. However, the statically operated EPROM consumes relatively high power. This power consumption by the EPROM is reduced by dynamically operating its read circuit, address decoder and so on. For example, the read circuit is constructed of a sense amplifier and a latch circuit, and the sense amplifier has its operation interrupted after the latch circuit has latched the read data. The address decoder is composed of a load MOSFET and address MOSFETs. The load MOSFET is caused to act as a precharge element in the dynamic operation and as an opertion current feeding element in the static operation.

Growing community of inventors

Kodaira, Japan

Fumio Tsuchiya