Fuji Electric Co., Ltd.

Fumio Shigeta

Yoshitaka Nishimura

Fumihiko Momose

Kazumasa Kido

Haruo Nakazawa

Yoshihiro Kodaira

Kyohei Fukuda

Takahito Harada

A control terminalof a semiconductor device has a recessed portion. A resin caseis provided with a fixing memberengaging with and fixing a recessed portionof a control terminal. The fixing memberis constituted by a resin block portionhaving a step portion engaging with the recessed portion, a nut-housing portion, and a beam portionintegrated by linking the resin block portionand the nut-housing portion. A resin case main bodyto which the fixing memberis fixed is provided with a hollow portion enabling insertion of the resin block portion. The nut-housing portionof the fixing memberand the resin block portionare attached to the resin case main bodyfrom one direction.

Semiconductor device

An ultrasonic welding tool is used to bond end portions of an external connection terminal to circuit patterns of an insulating substrate, with a Vickers hardness not lower than. Bonding end portions are provided integrally with a bar in the external connection terminal. A bonding end portion located substantially in the lengthwise center of the bar is bonded first, then others are bonded alternately in order toward either end. Hardness of the bonding end portions is increased so that strength of the ultrasonic welding portions is increased, and displacement of the bonding end portion in either end from its regular position is suppressed to keep bonding strength high. Bonding strength of the ultrasonic welding portions between the external connection terminal and the circuit patterns of the insulating substrate can be increased so that long-term reliability can be secured in a semiconductor device.

Semiconductor device and method for manufacturing the same

A semiconductor device, and method of manufacturing the device, having a p type diffusion layer; a V-groove including a bottom surface parallel to the rear surface and exposing the p type diffusion layer and a tapered side surface rising from the bottom surface; a p type semiconductor layer on the rear surface surrounded by the tapered side surface of the V-groove; and a p type isolation layer formed on the side surface and electrically connecting the p type diffusion layer on the front surface and the p type semiconductor layer on the rear surface. The V-groove has a chamfered configuration around the intersection between a corner part of the side surface and the bottom surface of the V-groove. An object is to prevent performance degradation due to stress concentration at the corner part of a recessed part caused by thermal history in soldering.

Semiconductor device and method of manufacturing the same

Hardness of bonding end portions of an external connection terminal to be bonded to circuit patterns of an insulating substrate which is not lower than 90 in Vickers hardness is disclosed. An ultrasonic welding tool is used. In the external connection terminal in which the bonding end portions are provided integrally with a bar, one of the bonding end portion located substantially in the lengthwise center of the bar is first bonded, and the other bonding end portions are bonded alternately in order toward either end. The hardness of the bonding end portions is increased so that strength of the ultrasonic welding portions is increased. Since the external connection terminal including the bonding end portions is bonded in such a manner that the bonding end portion located substantially in the center is first bonded and the other bonding end portions are then bonded in order of increasing distance substantially from the central bonding end portion, displacement of the bonding end portion in either end from its regular position can be suppressed to keep bonding strength high. In this manner, the bonding strength of the ultrasonic welding portions between the external connection terminal and the circuit patterns of the insulating substrate can be increased so that long-term reliability can be secured in a semiconductor device.

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Okaya, Japan

Fumio Shigeta