Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Fumio Sato

Hiroshi Fukui

Hiroyuki Hoshiya

Moriaki Fuyama

Reiko Arai

Susumu Soeya

Masaaki Sano

Katsuya Mitsuoka

Masanori Sakai

Makoto Hayashi

Hiroshi Hozoji

Hiroyoshi Kokaku

Takahiro Nagano

Masatsugu Ogata

Masanori Segawa

Tsutomu Yatsuo

Masahisa Inagaki

Yoshitaka Kojima

Katsumi Mabuchi

Katsumi Ohsumi

Masateru Suwa

Jin Onuki

Toshiki Kahara

Kohki Tamura

Takuya Takahashi

Isao Masaoka

Akio Nishikawa

Masayoshi Naito

Toshiaki Arato

Masakiyo Izumiya

Kimihiko Akahori

Tomio Yasuda

Tomio Yoshida

Mitsuo Yanagi

Noboru Ebata

A magnetoresistive element includes a first antiferromagnetic film, a first magnetic film having a magnetization direction fixed by magnetic coupling with the first antiferromagnetic film, a second antiferromagnetic film, a second magnetic film having a magnetization direction fixed by magnetic coupling with the second antiferromagnetic film, a third magnetic film having a magnetization direction able to rotate in response to an applied magnetic field, a first nonmagnetic film disposed between the first magnetic film and the third magnetic film, and a second nonmagnetic film disposed between the second magnetic film and the third magnetic film. The third magnetic film is disposed between the first nonmagnetic film and the second nonmagnetic film, the first magnetic film is disposed between the first antiferromagnetic film and the first nonmagnetic film, and the second magnetic film is disposed between the second antiferromagnetic film and the second nonmagnetic film.

Magnetoresistive element

A magnetic storage/read system includes a recording medium having tracks, and a magnetic head, including a magnetoresistive element, which reads a magnetic field from the recording medium. The magnetic storage/read system satisfies a relationship of d&lE;(12.5&times;10,)/Tr where d is a height, expressed in &mgr;m, of the magnetoresistive element in a direction perpendicular to a plane of the recording medium, and Tr is a track density, expressed in tracks per inch, of the tracks of the recording medium. The magnetoresistive element may include a first antiferromagnetic film; a first magnetic film having a magnetization direction which is fixed by magnetic coupling with the first antiferromagnetic film; a second antiferromagnetic film; a second magnetic film having a magnetization direction which is fixed by magnetic coupling with the second antiferromagnetic film; a third magnetic film having a magnetization direction which is able to rotate in response to an applied magnetic field; a first nonmagnetic conductive film disposed between the first magnetic film and the third magnetic film; and a second nonmagnetic conductive film disposed between the second magnetic film and the third magnetic film; wherein the third magnetic film is disposed between the first nonmagnetic conductive film and the second nonmagnetic conductive film, the first magnetic film is disposed between the first antiferromagnetic film and the first nonmagnetic conductive film, and the second magnetic film is disposed between the second antiferromagnetic film and the second nonmagnetic conductive film.

Magnetic head including magnetoresistive element

A magnetic head includes a magnetoresistive element. The magnetoresistive element includes a first magnetic film having a fixed magnetization direction, a second magnetic film having a fixed magnetization direction, a third magnetic film having a rotatable magnetization direction, a first nonmagnetic film, and a second nonmagnetic film. The first magnetic film, the first nonmagnetic film, the third magnetic film, the second nonmagnetic film, and the second magnetic film are stacked in this order.

A magnetic storage/read system includes a recording medium for magnetically storing a signal and a magnetoresistive element which is driven relative to the recording medium. The magnetoresistive element may include a substrate, a first antiferromagnetic film, a first ferromagnetic film, a first nonmagnetic film, a soft magnetic film, a second nonmagnetic film, a second ferromagnetic film, and a second antiferromagnetic film, wherein the films are sequentially layered directly on the substrate with no intervening layer between any of the films. At least one of the first antiferromagnetic film and the second antiferromagnetic film may be made of nickel oxide. The first ferromagnetic film and the second ferromagnetic film have a first magnetization which is fixed in a predetermined direction, and the soft magnetic film has a second magnetization which is rotatable in response to a magnetic field from the recording medium such that an angle between a direction of the second magnetization and the predetermined direction in which the first magnetization is fixed varies in response to the magnetic field from the recording medium, thereby producing a magnetoresistive effect.

Magnetic storage/read system with read head including magnetoresistive

A resin composition having superior molding character, bonding character, moisture resistance, and heat resistance, for encapsulating of a semiconductor which contains:

Resin composition for encapsulating of semiconductor and semiconductor

A plant operational status monitoring supervisory system comprising; means for extracting information directly relating to water quality of an objective portion consecutively for a period of time by means of an electrochemical water quality sensor installed in an objective portion to monitor in-situ in a plant; means for evaluating water quality based on thus extracted information; means for comparing an obtained water quality evaluation result with a reference value for a predetermined plant operation procedure; and means for displaying or storing necessary portion out of said comparison results; is disclosed. An electrochemical reference electrode used in this system being provided with an electrolyte layer containing ion of the electrode member; a porous ceramic layer surrounding the same without permeating liquid; and electrode member electrochemically contacting with said elec-trolyte layer; and a terminal electrically contacting with said electrode member; and further having a long life in high temperature water, various status of high temperature water in objective portions and that of nearby constituent members in a plant are possible to be monitored online by means of this reference electrode. Further, because monitored data are processed by means of a neural network, the higher precision level of monitoring has been achieved.

Monitoring system for plant operation condition and its in-situ

A multi-emitter type semiconductor device, namely, a semiconductor device having an arrangement in which a majority of emitter regions are divided by a gate region and surrounded thereby. In the semiconductor device, a member adapted to apply an external control signal to a gate electrode takes the form of a closed-loop shape and the majority of emitter regions are arranged on both sides of the loop. This arrangement ensures that the individual emitter regions, even when the number of the emitter regions is increased to a great extent, can be applied with a uniform control signal, thereby preventing degradation of the turn-off characteristics.

Semiconductor devices of multi-emitter type

Disclosed is a process for producing a positive electrode for a non-aqueous electrolytic cell. Manganese dioxide is heat-treated at a temperature between 250.degree. and 400.degree. C. The heat-treated manganese dioxide is next mixed with a conducting agent and binder. The binder is suspended in water by means of non-ionic surface active agent, and the mixture is heat-treated at a temperature between 180.degree. and 350.degree. C. and then pressured molded into a positive electrode. This production process allows the provision of a positive electrode for a non-aqueous electrolytic cell of excellent discharge characteristics.

Process for producing a positive electrode for a non-aqueous

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Hitachi, Japan

Fumio Sato