Kabushiki Kaisha Toshiba

Fumio Sasaki

Ryoichi Ohara

Yoshitomo Sagae

Hisao Kawasaki

A semiconductor device concerning the embodiment includes a semiconductor layer which has a first surface and a second surface which is opposite to the first surface, an interlayer which is provided on the first surface and which consists of only metal whose standard oxidation-reduction potential is not lower than 0 (zero) V in an ionization tendency, and an electrode provided on the interlayer. The semiconductor device further includes an electrical conductive layer which covers an inside of a hole which is formed in the semiconductor layer so as to reach the interlayer the interlayer from the second surface, and which is electrically connected to the electrode via the interlayer which is exposed to a bottom of the hole.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a SOI substrate including a silicon substrate, an oxide layer on the silicon substrate, and a silicon layer on the oxide layer; a source region and a drain region formed in the silicon layer; and an acceptor-doped layer formed between the oxide layer and the silicon substrate, the acceptor-doped layer being doped with acceptors.

SOI substrate with acceptor-doped layer

A semiconductor device has a gate electrode including a leg part and a canopy part. A barrier layer is formed on a bottom face of the leg part of the gate electrode. In addition, on the lower surface of the barrier layer, a Schottky metal layer with an electrode width wider than the electrode width of the barrier layer is formed to have a Schottky junction with a semiconductor layer.

Semiconductor device

A semiconductor device receiving as input a radio frequency signal having a frequency of 500 MHz or more and a power of 20 dBm or more is provided. The semiconductor device includes: a silicon substrate; a silicon oxide film formed on the silicon substrate; a radio frequency interconnect provided on the silicon oxide film and passing the radio frequency signal; a fixed potential interconnect provided on the silicon oxide film and placed at a fixed potential; and an acceptor-doped layer. The acceptor-doped layer is formed in a region of the silicon substrate. The region is in contact with the silicon oxide film. The acceptor-doped layer is doped with acceptors.

Growing community of inventors

Kanagawa-ken, Japan

Fumio Sasaki