Sumitomo Chemical Company, Limited

Fumio Oi

Yasunori Uetani

Makoto Hanabata

Hirotoshi Nakanishi

Koji Kuwana

Takeshi Hioki

Yukio Hanamoto

Jun Tomioka

Haruyoshi Osaki

Haruyoshi Ozaki

Akihiro Furuta

Yukikazu Uemura

Takao Ninomiya

A positive resist composition which comprises a 1,2-quinone diazide compound and an alkali-soluble resin containing a polyphenol compound (I) of the general formula:

Radiation-sensitive positive resist composition comprising a 1,2-quinone

A positive resist composition which comprises, in admixture, a photosensitive 1,2-quinone diazide compound, an alkali-soluble resin to bind ingredients and polyphenol compound to control a dissolution rate in a developer represented by the formula: ##STR1## wherein R is C.sub.1-18 or hydrogen, the composition is sensitive to radiation and has good balance of sensitivity, resolving power and heat resistance.

Radiation-sensitive positive resist composition

A positive resist composition which comprises, in admixture, a photosensitive 1,2-quinone diazide compound, an alkali-soluble resin to bind ingredients and polyphenol compound to control a dissolution rate in a developer having a molecular weight of not more than 550 and represented by the general formula: ##STR1## wherein a, b, c, d, e, and f are the same or different and a number of 0-3, provided that d+f is not less than 1, and provided that if b, d and f are 1, then at least one of a, c, and e is not 0; R.sub.1, R.sub.2 and R.sub.3 are the same or different and a C.sub.1 -C.sub.18 alkyl group, a C.sub.1 -C.sub.18 alkoxy group, a carboxyl group or a halogen atom; R.sub.4 is a hydrogen atom, a C.sub.1 -C.sub.18 alkyl group or aryl group, wherein an amount of said 1,2-quinone diazide compound is from 5 to 100% by weight and an amount of said polyphenol compound is from 4 to 40% by weight based on the total weight of said alkali-soluble resin, wherein the resist composition is sensitive to radiation and has good balance of sensitivity, resolving power and heat resistance.

A positive resist composition which comprises in admixture an alkali-soluble resin and, as a sensitizer, first and second quinone diazide sulfonic acid esters of a phenol compound, wherein

Resist composition comprising a quinone diazide sulfonic diester and a

A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I): ##STR1## wherein Y.sub.1, Y.sub.2, Y.sub.3 and Y.sub.4 are the same or different and each a hydrogen atom, an alkyl group, a halogen atom or a hydroxyl group, provided that at least one of Y.sub.1, Y.sub.2, Y.sub.3 and Y.sub.4 is a hydroxyl group; Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5 and Z.sub.6 are the same or different and each a hydrogen atom, an alkyl, an aryl group, a halogen atom or a hydroxyl group, provided that at least one of Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5 and Z.sub.6 is a hydroxyl group; X is ##STR2## in which R.sub.1 and R.sub.2 are the same or different and each a hydrogen atom, an alkyl group, an alkenyl group, a cyclo-alkyl group, an alkoxy group or an aryl group, provided that when at least one of R.sub.1 and R.sub.2 is a hydrogen atom, an alkyl or aryl group is present at the ortho position to a hydroxyl group which is present at the ortho position to X provides a positive resist composition which has a high .gamma.-value.

Resist composition, novel phenol compound and quinone diazide sulfonic

A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I) or (II): ##STR1## wherein a, c and d are the same or different and a number of 0 to 3, provided that when a is 0 or 3, b is a number of 0 to 3 or when a is 1 or 2, b is 0, 1 or 2, and a+b and c+d are not less than 2; R and R' are the same or different and an alkyl group or an aryl group provides a positive resist composition having a high .gamma.-value.

Positive photoresist composition containing alkali-soluble resin and

A process for preparing a positive resist composition, which process includes the steps of condensation reacting a quinone diazide sulfonyl halogenide with a phenol compound, mixing a condensation reaction mixture with a solution of an alkali-soluble resin in a resist solvent and removing impurities from the mixture, whereby the overall processing time can be shortened.

Process for preparing a positive resist composition by mixing the

A quinone diazide sulfonic acid ester of a phenol compound of the general formula (I): ##STR1## wherein Y.sub.1 and Y.sub.2 are each a hydrogen atom, an alkyl group or a hydroxyl group, provided that at least one of Y.sub.1 and Y.sub.2 is a hydroxyl group; Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5, Z.sub.6 and Z.sub.7 are the same or different and each a hydrogen atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an aryl group or halogen atom, provided that at least two of Z.sub.1, Z.sub.2, Z.sub.3, Z.sub.4, Z.sub.5, Z.sub.6 and Z.sub.7 are hydroxyl groups; R.sub.1, R.sub.2 and R.sub.3 are the same or different and each a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group or an aryl group provides a positive resist composition having a high .gamma.-value.

Positive resist composition containing quinone diazide sulfonic acid

A novolak resin for a positive photoresist is provided herein, which resin is produced by the addition condensation reaction of a phenol with formaldehyde. This novolak resin has improved heat resistant and sensitivity properties and the thickness retention of the novolak resins are very high. The novolak resins are characterized in that the area ratio of the gel permeation chromatographic pattern (GPC) as measured by the use of a UV(254 nm) detector, is as follows: a range wherein the molecular weight, calculated as polystyrene, is from 150 to less than 500, not including a phenol and the unreacted monomer, is from 8 to 35%, hereinafter referred to as an A region, the range wherein the molecular weight calculated as polystyrene is from 500 to less than 5000 is from 0 to 30%, hereinafter referred to as a B region, and the range wherein the molecular weight calculated as polystyrene exceeds 5000 is from 35 to 92%, hereinafter referred to as the C region, and wherein the ratio of the B region to the A region is 2.50 or less.

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Ashiya, Japan

Fumio Oi