Kabushiki Kaisha Toshiba

Fumio Nakata

Keitaro Shigenaka

Katsuyoshi Fukuda

Keijiro Hirahara

A multi-wavelength semiconductor image sensor comprises a p-type Hg Cd Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg Cd Te photo-absorbing layer deposited on the CdTe isolation layer, n regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.

Method of manufacturing a multi-wavelength semiconductor image sensor

Multi-wavelength semiconductor image sensor

Multi-wavelength semiconductor image sensor and method of manufacturing the same

A compound semiconductor device suitable for an infrared ray detector comprises a substrate composed of indium antimonide (InSb), a first conductive layer deposited on the substrate and composed of tin-indium antimonide represented by the formula Sn.sub.x (InSb).sub.1-x, where 0.05.ltoreq.x.ltoreq.0.3, a second conductive layer that is a semiconductor region (active region) formed on the first conductive layer, and electrode provided on the second conductive layer, and a surface protective film formed on the first conductive layer except for the electrode portions.

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Urayasu, Japan

Fumio Nakata