Tama-tlo Corporation

Jjtech Co., Ltd.

Fumio Mizuno

Kanji Otsuka

Munekazu Takano

Yutaka Akiyama

Tamotsu Usami

Yuko Tanba

Tsuneo Ito

Saburo Yokokura

Disclosed is a semiconductor device wherein the switching speed of a transistor is increased. Specifically disclosed is a semiconductor device comprising a semiconductor layer formed on a part of an insulating layer, a first transistor formed on a lateral face of the semiconductor layer and having a first gate insulating film, a first gate electrode and two first impurity layers forming a source and a drain, and a second transistor formed on another lateral face of the semiconductor layer and having a second gate insulating film, a second gate electrode and two second impurity layers forming a source and a drain.

High-speed semiconductor device and method for manufacturing the same

The object of the invention is to provide a semiconductor device including signal-transmission interconnections preferable for transmitting high frequency signal and capability to adjust characteristics of the above signal-transmission interconnections. A semiconductor device according to the present invention consists of a signal-transmission interconnectionfor transmission of signals, a MOS capacitance elementhaving a gate electrode connected to the signal-transmission interconnection, a first voltage-applying interconnectionconnected to a source and a drain of the MOS capacitance elementand applying a voltage to the source and the drain of the MOS capacitance element, a second voltage-applying interconnectionconnected to a well of the MOS capacitance element, and applying a voltage to the well of said first MOS capacitance element. Jitters occurring in the signal-transmission interconnectioncan be adjusted by adjusting each of voltages of the first voltage-applying interconnectionand the second voltage-applying interconnection

Semiconductor device and method for adjusting characteristics thereof

Growing community of inventors

Hino, Japan

Fumio Mizuno