Canon Kabushiki Kaisha

Nippon Reinz Co., Ltd.

Tohoku Steel Co., Ltd.

Fumio Kishi

Keisuke Yamamoto

Masato Yamanobe

Takeo Tsukamoto

Toshikazu Ohnishi

Sotomitsu Ikeda

Kazuya Miyazaki

Yasuhiro Hamamoto

Norio Kaneko

Hisaaki Kawade

Hiroshi Takagi

Takehiko Kawasaki

Taiko Motoi

Kenji Suzuki

Susumu Kozuki

Akira Fujii

Yoichi Ando

Masatake Akaike

Akira Shinmi

Takeshi Sawada

Koichi Tokuda

Takayuki Yagi

Tohru Den

Yoshiyuki Osada

Nobuo Kushibiki

Yoko Yoshinaga

Kazuaki Ohmi

Takao Kusaka

Hitoshi Oda

Michiyo Nishimura

Takashi Noma

Masanori Mitome

Fujio Iwatate

Masayoshi Tabata

Shigeki Yoshida

Kiyozumi Niizuma

Seijiro Kato

Jun Akimitsu

Takahiro Horiguchi

Eiichi Tahara

Atsuko Shinjou

Kazuaki Yokota

Atsuko Tanaka

Kumiko Uno

An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 &#x3bc;m, peaks of scattered light, of which 1) a peak (P) located in the vicinity of 1,580 cmis greater than a peak (P) located in the vicinity of 1,335 cmor 2) the half-width of a peak (P) located in the vicinity of 1,335 cmis not greater than 150 cm.

Method for manufacturing an electron-emitting device with first and second carbon films

Method for manufacturing an electric emitting device with first and second carbon films

An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 &#x3bc;m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cmis greater than a peak (P1) located in the vicinity of 1,335 cmor 2) the half-width of a peak (P1) located in the vicinity of 1,335 cmis not greater than 150 cm.

Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same

A method of fabricating an electron source constituted by a plurality of x-direction wirings arranged on a substrate, a plurality of y-direction wirings crossing the x-direction wirings, an insulating layer for electrically insulating the x- and y-direction wirings, and a plurality of conductive films each of which is electrically connected to the x- and y-direction wirings and has a gap, comprises a conductive film formation step of forming a plurality of conductive films to be connected to the pluralities of x- and y-direction wirings, a grouping step of dividing all the x-direction wirings into a plurality of groups, and a forming step of sequentially performing, for all the groups, a step of simultaneously applying a voltage to all wirings assigned to the same group, thereby forming gaps in the plurality of conductive films. The grouping step includes the steps of assigning a plurality of wirings to each group, and arranging wirings constituting a group between wirings constituting other groups.

Method of fabricating electron source and image forming apparatus

An image-forming apparatus includes an envelope, an electron source and an image-forming member arranged within the envelope, as well as an electron source drive circuit. An electroconductive member is arranged on the inner wall surface of the envelope between the electron source and the image-forming member. An electric current flow path A is formed as extending between the electroconductive member and the ground without passing through any of the electron source and the drive circuit. The electric current flow path A has a resistance lower than the resistance of another electric current flow path B extending between the electroconductive member and the ground by way of the electron source or the drive circuit.

Image-forming apparatus

An electron-emitting device includes a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 &mgr;m, peaks of scattered light, of which 1) a peak (P ) located in the vicinity of 1,580 cm is greater than a peak (P ) located in the vicinity of 1,335 cm or 2) the half-width of a peak (P ) located in the vicinity of 1,335 cm is not greater than 150 cm .

A method of manufacturing an electron source with electron emitting elements is provided. The method has a process of depositing a deposit substance in an area including at least an area of the electron emitting element from which area electrons are emitted. The depositing process is performed in an atmosphere of a gas containing at least a source material of the deposit substance, the gas having a mean free path allowing the gas to take a viscous flow state.

Electron source manufacturing method, and image forming apparatus method

An electron-emitting device includes a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 &mgr;m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm,is greater than a peak (P1) located in the vicinity of 1,335 cm,or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm,is not greater than 150 cm,.

An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1&mgr;m, peaks of scattered light, of which 1) a peak (P,) located in the vicinity of 1,580 cm,is greater than a peak (P,) located in the vicinity of 1,335 cm,or 2) the half-width of a peak (P,) located in the vicinity of 1,335 cm,is not greater than 150 cm,.

Method of manufacturing electron-emitting device electron source and image-forming apparatus

A metal gasket is composed of a plurality of metal sheets superimposed one above the other and including a plurality of joints. Each of the joints includes a plurality of cut lines defining inner side edges of the metal sheets, and a bent portion located between the cut lines and having outer side edges which are frictionally engaged with the inner side edges of the metal sheets. The joints are oriented in different directions to accommodate a shear force.

Method of making a metal gasket

Method of producing metal gasket

An electron emitting device includes a pair of device electrodes disposed at locations opposite to each other, a conductive thin film in contact with both the pair of device electrodes, and an electron emitting region formed in a part of the conductive thin film. The conductive thin film is composed of fine particles including a first metal element serving as a main constituent element and at least one second metal element. The second metal element is to precipitate at the surface of the conductive thin film and thus form a low work function material layer. When a voltage is applied between the pair of device electrodes, the second metal element moves from the inside of the conductive thin film to at least a part of the surface of the conductive thin film.

Electron emitting device having a conductive thin film formed of at

An electron-emitting device comprising a pair of device electrodes and an electroconductive film including an electron-emitting region is manufactured by a method comprising a process of forming an electroconductive film including steps of forming a pattern on a thin film containing a metal element on the basis of a difference of chemical state, and removing part of the thin film on the basis of the difference of chemical state.

Method of manufacturing electron-emitting device, electron source and

A metal oxide is provided which is represented by the compositional formula :

Substituted superconductive Bi-Sr-Ca-Cu oxide and Bi-Sr-Ca-Ln-Cu oxide

Growing community of inventors

Kanagawa-ken, Japan

Fumio Kishi