Hitachi, Ltd.

Ngk Insulators, Inc.

Other

Ricoh Company, Ltd.

Osaka University

Toyoda Gosei Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Sumitomo Electric Industries, Limited

Panasonic Corporation

The Tokyo Electric Power Company, Incorporated

Japan Synthetic Rubber Co., Ltd.

Kurita Water Industries Ltd.

Tomoegawa Paper Co., Inc.

Hitachi Engineering Co., Ltd.

Hitachi Plant Engineering Construction Co., Ltd.

Fumio Kawamura

Takatomo Sasaki

Makoto Iwai

Yusuke Mori

Yasuo Kitaoka

Hisashi Minemoto

Isao Kidoguchi

Katsuhiro Imai

Hiromi Furuya

Masashi Yoshimura

Makoto Kikuchi

Kyoji Tsutsui

Shiro Yamazaki

Masafumi Torii

Takanao Shimodaira

Hiroaki Matsui

Masaru Shimada

Tadafumi Tatewaki

Kiyomi Funabashi

Hideo Yusa

Masafumi Moriya

Kazuo Hosoda

Katsushi Sugiyama

Shiro Yamasaki

Yasuhito Takahashi

Koji Hirata

Katsuaki Kokubo

Katsuhisa Kamio

Masanori Morishita

Masafumi Ohta

Yohta Sakon

Shin Tamata

Ryu Hirota

Seiji Nagai

Koichi Chino

Hidekazu Umeda

Teruyuki Ohnuma

Shuhei Higashihara

Toshihiko Takahashi

Takayuki Sato

Tetsuo Fukasawa

Minoru Kawahara

Seiji Nakahata

Mikiya Ichimura

Shigeru Shimada

Jun Doi

Yamato Asakura

Masami Matsuda

Naohito Uetake

Yuji Takahashi

Tomoyuki Shimada

Yoshihiko Hotta

Hiroaki Kobayashi

Mitsuru Hashimoto

Naoki Shibata

Akihiko Ishibashi

Motoaki Utamura

Hisao Ono

Yoshiyuki Namizuka

Kazuyuki Suzuki

Katsumi Ohsumi

Atsushi Kutami

Katsumi Miyazaki

Osamu Yamada

Shunsuke Uchida

Susumu Horiuchi

Koji Kato

Yasuo Kobayashi

Koji Kawai

Shoji Maruyama

Hiroshi Hosaka

Mamoru Mizumoto

Yasuo Kawada

Tsutomu Baba

Masayoshi Miyamoto

Mitsuhisa Kanaya

Chikashi Ihara

Tomoya Iwahashi

Mamoru Imade

Yoshihiko Yamamura

Akira Watanabe

Masaharu Sakagami

Tatsuo Izumida

Kenji Motojima

Churyo Kodama

Akinori Sei

Yoshihiro Shimizu

Minoru Miki

Tetsuya Kawaguchi

Takeshi Hatakeyama

Kouichi Hiranaka

Kunichika Moroboshi

Masami Yanagisawa

Tomonori Fukui

Akira Sasahira

Masatake Kawashima

Taisuke Hirota

Yasuo Hirasawa

The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.

Nitride single crystal manufacturing apparatus

A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.

Process for producing a nitride single crystal and apparatus therefor

It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.

Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal

A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Group-III element nitride crystal producing method and group-III element nitride crystal

A nitride single crystal is produced on a seed crystal substratein a melt containing a flux and a raw material of the single crystal in a growing vessel. The meltin the growing vesselhas temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.

Method for manufacturing nitride single crystal

A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vesselset in a non-oxidizing atmosphere to thereby produce a solidified matter. The reaction vesseland the solidified matterare heated in a non-oxidizing atmosphere within a crystal growth apparatus to melt the solidified matter to thereby produce a solution. A single crystal is grown from the solution.

Process for producing single crystal

In the production of GaN through the flux method, deposition of miscellaneous crystals on the nitrogen-face of a GaN self-standing substrate and waste of raw materials are prevented. Four arrangements of crucibles and a GaN self-standing substrate are exemplified. In FIG.A, a nitrogen-face of a self-standing substrate comes into close contact with a sloped flat inner wall of a crucible. In FIG.B, a nitrogen-face of a self-standing substrate comes into close contact with a horizontally facing flat inner wall of a crucible, and the substrate is fixed by means of a jig. In FIG.C, a jig is provided on a flat bottom of a crucible, and two GaN self-standing substrates are fixed by means of the jig so that the nitrogen-faces of the substrates come into close contact with each other. In FIG.D, a jig is provided on a flat bottom of a crucible, and a GaN self-standing substrate is fixed on the jig so that the nitrogen-face of the substrate is covered with the jig. A flux mixture of molten gallium and sodium is charged into each crucible, and a GaN single crystal is grown on a gallium-face under pressurized nitrogen.

Method for producing group III nitride-based compound semiconductor

It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material.

Apparatus for producing nitride single crystal

A GaN single crystalis grown on a crystal growth surface of a seed crystal (GaN layer) through the flux method in a nitrogen (N) atmosphere at 3.7 MPa and 870&#xb0; C. employing a flux mixture including Ga, Na, and Li at about 870&#xb0; C. Since the back surface of the templateis R-plane of the sapphire substrate, the templateis readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the templateis gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystalis grown to a sufficient thickness, for example, about 500 &#x3bc;m or more, the temperature of the crucible is maintained at 850&#xb0; C. to 880&#xb0; C., whereby the entirety of the sapphire substrateis dissolved in the flux mixture.

Method for producing group III nitride-based compound semiconductor crystal

Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30&#xb0; with respect to the horizontal plane &#x3b1;. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.

Method for producing a semiconductor crystal

A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG., a non-polar surface can be grown.

GaN crystal producing method, GaN crystal, GaN crystal substrate, semiconductor device and GaN crystal producing apparatus

In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na&#x2014;Ga mixture. The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.

Method and apparatus for producing group III nitride based compound semiconductor

The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

Semiconductor substrate, electronic device, optical device, and production methods therefor

A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device

A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1&#xb0; C. or larger and 8&#xb0; C. or lower. Preferably, the substrate of seed crystal is vertically placed.

Method for manufacturing single crystal of nitride

Growing community of inventors

Shizuoka, Japan

Fumio Kawamura