Hitachi, Ltd.

Hitachi Chemical Company, Ltd.

Fumio Kataoka

Fusaji Shoji

Hitoshi Yokono

Haruhiko Matsuyama

Jun Tanaka

Issei Takemoto

Keiko Isoda

Haruhiko Kikkawa

Isao Obara

Tokio Isogai

Hideo Sotokawa

Takashi Inoue

Eiji Matsuzaki

Makoto Kaji

Hitoshi Oka

Hideo Arima

Naoya Kitamura

Shunichiro Uchimura

Hideyasu Murooka

Masayuki Kyooi

Minoru Sugiura

Naoki Matsushima

Ryoichi Sudo

Daisuke Makino

Hidetaka Shigi

Asao Isobe

Tetsuya Yamazaki

Akio Fujiwara

Shigeru Koibuchi

Mitsumasa Kojima

Toshimasa Miura

Hidetaka Satou

Miharu Otani

Mitumasa Kojima

Mithumasa Kojima

Teruji Aizawa

Saori Matsuda

Shozi Ikeda

Shirou Akamatsu

Shogi Ikeda

A polyimide precursor having repeating units of the formula:

Photosensitive polyimide precursor and its use for pattern formation

A surface-protecting film is formed on the surface of the semiconductor element of a resin-sealed semiconductor device to prevent the peeling and cracking of the sealing member used in said device, by coating on said surface a polyimide precursor composition containing a polyimide precursor having a recurring unit constitution represented by the following general formula (1) and heat-curing the coated polyimide precursor composition:

Surface-protecting film and resin-sealed semiconductor device having said film

A surface-protecting film is formed on the surface of the semiconductor element of a resin-sealed semiconductor device to prevent the peeling and cracking of the sealing member used in said device, by coating on said surface a polyimide precursor composition containing a polyimide precursor having a recurring unit constitution represented by the following general formula (1) and heat-curing the coated polyimide precursor composition: ##STR1## wherein R.sup.1 is a trivalent or tetravalent aromatic group; R.sup.2 and R.sup.3 are each a tetravalent organic group having 4 or more carbon atoms; R.sup.4 is a bivalent organic group having 4 or more carbon atoms; X is a bivalent organic group containing at least one member selected from the group consisting of oxygen and nitrogen: Y is a monovalent organic group having 15 or less carbon atoms; n=5-100 and m=0-95 with a proviso that n+m=100; and p is 1 or 2).

Surface-protecting film and resin-sealed semiconductor device having

A polyimide precursor having repeating units of the formula: ##STR1## wherein R.sup.1 is a tetravalent organic group having 4 or more carbon atoms; R.sup.2 is a trivalent or tetravalent organic group having one or more aromatic rings; R.sup.3 is a monovalent organic group; A is a monovalent group showing acidity; and n is an integer of 1 or 2, is effective for preparing a highly sensitive negative-working photosensitive material developable with an alkaline aqueous solution in a short time with high resolution.

Photosensitve polymide precursor and its use for pattern formation

This invention relates to a wiring structure having metal wiring layers and polyimide layers. An object of this invention is to overcome problems caused by oxidation of a metal surface, such as an increase in the resistance of wiring and a reduction in insulation, by preventing a reaction between a metal of the wiring layers, such as copper, and carboxyl groups of polyamic acid which make up the polyimide layers. In the wiring structure according to the present invention, the polyimide layers have been formed by heating and curing a resin composition which comprises a polyimide precursor, an amine compound and an organic solvent.

Wiring structure with metal wiring layers and polyimide layers, and

The present invention provides the wiring structure having a wiring layer and insulation layer and the method of manufacturing the same, wherein at least a part of the wiring of said wiring layer comprises copper, and said insulation layer comprises the polyimide obtained by heating the polyimide precursor composition containing the polyimide precursor having the repeating unit which can be represented by the following general formula (Chemical formula 15). ##STR1## (In this formula, R.sup.1 is at least one type of quadrivalent organic group selected from among the Chemical formulae 16, while R.sup.2 is a bivalent organic group containing aromatic ring).

Wiring structures and method of manufacturing the same

A metalization structure uses a surface protective film formed of a polyimide that is produced by heating and dehydrating polyimide precursor has its molecular chain composed of recurring units represented by the following general formula (1) and recurring units represented by the following general formula (2): ##STR1## (where R.sup.1 is at least one tetravalent organic group selected from among ##STR2## R.sup.2 is at least one divalent organic group of a linear structure as selected from among ##STR3## and R.sup.3 is a divalent organic group of a crooked structure that has at least two aromatic rings).

Polyimide precursor, polyimide and metalization structure using said

Disclosed are a novel azide compound represented, for example, by the formula, ##STR1## wherein R.sub.f represents a fluoroalkyl or fluoroalkylpolyether group, ##STR2## wherein R represents a divalent organic group having an ester bond, and R.sub.f ' represents a fluoroalkylpolyether group, and a novel diacylhydrazine compound having a fluoroalkylpolyether group in the side chain and lubricants containing them. When this lubricant is coated onto the carbonaceous protective film of magnetic recording media and reacted by the action of light or heat, it strongly bonds or adheres to the protective film. Thus, the durability of the lubricant improves, as a result of which a high-density magnetic recording medium having a high reliability and long life can be obtained.

Diacylhydrazine photo-reactive compounds

A process for the fabrication of an interconnected multilayer board involves the steps of forming a metallic under-conductive layer on a base substrate, forming a windowed resist layer on the metallic under-conductive layer, filling windows of the resist layer with a conductor by plating thereby forming a conductor layer, forming another windowed resist layer on the conductor layer and filling windows of this resist layer with a conductor by plating, thereby forming a via-hole layer and to provide a two-level structure of the conductor layer and the via-hole layer. Thereafter, the resist layers and portions of the metallic under-conductor layer other than those in contact with a lower face of the conductor constituting the conductor layer are dissolved to form a two-level skeleton structure of conductor lines and spaces within the skeleton structure are filled with a varnish in a solventless form and the varnish is cured.

Process for fabricating an interconnected multilayer board

Described herein are interconnected mutilayer boards and their fabrication processes. Multilayer conductor lines of a skeleton structure are formed by conducting multilayer metallization while including all resist layers and metallic under-conductive layers and then removing the resist layers and metallic under-conductive layers at once. Spaces between the multilayer conductor lines of the skeleton structure are then filled with a solventless varnish so that insulating layers are formed. Modules making use of such interconnected multilayer boards and computers having such modules are also described.

Interconnected multilayer boards and fabrication processes thereof

The present invention provides a polyimide having all of small dielectric constant, small thermal expansion coefficient, high heat resistance, high glass transition temperature and high mechanical properties, a precursor of the polyimide, and processes for producing them. A polyimide precursor whose molecular chain comprises repeating units represented by the following general formula (1) and repeating units represented by the following general formula (2): ##STR1## wherein R.sup.1 is at least one kind of tetravalent organic group selected from the group consisting of ##STR2## R.sup.2 is at least one kind of divalent organic group having a linear structure which is selected from the group consisting of ##STR3## m is an integer of 1 to 4, and R.sup.3 is a divalent organic group having a non-linear structure which contains at least two aromatic rings.

Polyimide precursor, cured product thereof, and processes for producing

An organic silicon-terminated polyimide precursor having a very stable solution viscosity is produced by polycondensing 100 parts by weight of a mixture composed of 90 to 99.5% by mole of an organic diamine represented by the following general formula (I) and 10 to 0.5% by weight by mole of an organic silyl represented by the following general formula (II): ##STR1## wherein R.sup.1 and R.sup.2 are divalent organic groups; R.sup.3 and R.sup.4 are monovalent organic groups; m is 0, 1, 2, or 3, with an organic tetracarboxylic acid dianhydride represented by the following general formula (III) in a molar amount corresponding to the 100 parts by weight of the mixture of the organic diamine and the organic silyl represented by the said general formulae (I) and (II), respectively, in an organic polar solvent at 0.degree. to 40.degree. C., thereby obtaining a solution of organic silicon-terminated polyimide precursor, and heating the solution at 50.degree. to 80.degree. C.: ##STR2## wherein R.sup.5 is a tetravelent organic group. The polyimide having good adhesion and mechanical characteristics is obtained by further heating the precursor solution at 100.degree. to 450.degree. C.

Process for producing organic silicon-terminated polyimide precursor and

When a 4-halogenoorthophthalic acid salt is dissolved together with a base in an alkaline aqueous solution and the solution is heated in the presence of a catalyst comprising a noble metal supported on a carrier, a formic acid salt and a small amount of an aliphatic compound containing a hydroxyl group, a 3,3',4,4'-biphenyltetracarboxylic acid salt is obtained in a high yield.

Process for preparation of 3,3',4,4'-biphenyltetracarboxylic acid salts

A photosensitive polymer composition comprising (A) a poly(amic acid), (B) a compound or a mixture of compounds which can form a compound having two or more amino groups in the molecule, and (C) at least one compound having a boiling point of 150.degree. C. or higher at atmospheric pressure and selected from the group consisting of ##STR1## wherein R.sup.a, R.sup.b, R.sup.c, m and n are as defined in the specification, has good properties and does not produce cracks on a pattern at the time of development obtained from said composition.

Flexible photosensitive polymer composition with azide and/or amine

A light-sensitive polymer composition comprising a poly(amic acid), a special bisazide compound and an amine compound can give a film which has high sensitivity and in which portions exposed to light are not easily released by a developing solution at the time of development.

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Yokohama, Japan

Fumio Kataoka