Nlt Technologies, Ltd.

Tianma Japan, Ltd.

Tianma Micro-Electronics Co., Ltd.

Fuminori Tamura

Takayuki Ishino

Hiroyuki Sekine

Kazushige Takechi

Yoshikazu Hatazawa

Toru Ukita

Yusuke Yamamoto

Shuhei Nara

Hiroki Sugaya

An active matrix substrate includes a plurality of pixel electrodes; a plurality of switching elements that connect to each of the plurality of pixel electrodes; a plurality of pixel lines that connect to each of the plurality of switching elements; a plurality of connection lines that connect to each of the plurality of pixel lines; and a plurality of terminals that connect to each of the plurality of connection lines. An arrangement direction of the pixel lines and an arrangement direction of the terminals differ.

Active matrix substrate, liquid crystal display device, self-luminous display device, and imaging device

An image sensor includes: a switching element disposed on a substrate; a photoelectric conversion element connected to the switching element; a first protective film directly covering the photoelectric conversion element; and a first organic film formed at a layer above the switching element, the first organic film being in contact with the first protective film, wherein the first organic film covers a first end portion of the photoelectric conversion element, the first end portion being at least a part of an end portion of the photoelectric conversion element, wherein the first organic film has a first covering portion at an end of the first organic film, wherein the first covering portion covers the first end portion, wherein the first covering portion is inclined down towards the photoelectric conversion element, and wherein the first organic film covers only the first end portion of the photoelectric conversion element.

Image sensor

In manufacturing an image sensor for FPD having an oxide semiconductor TFT as a switching element, a large amount of hydrogen contained in raw gas is diffused in the oxide semiconductor at the time of forming a-Si photo diode (PD) which is a photoelectric conversion element, causing significant variation in the characteristic of TFT which may thereby not operate. In an image sensor in which an oxide semiconductor TFT and a-Si PD are formed on a substrate in this order, a gas barrier film is disposed between the oxide semiconductor TFT and the PD, and the drain terminal (drain metal) of the oxide semiconductor TFT is connected to one terminal (lower electrode) of the PD via connection wiring (bridge wiring) formed on a protective film arranged over the PD.

Image sensor and method of manufacturing the same

Provided are an image sensor and a method of manufacturing method of manufacturing the image sensor. The image sensor includes a substrate, photoelectric transducers and switching elements formed in layers on the substrate in this order. Each of the photoelectric transducers includes a hydrogenated amorphous silicon layer. Each of the switching elements includes an amorphous oxide semiconductor layer. The image sensor further includes a blocking layer arranged between the hydrogenated amorphous silicon layers of the photoelectric transducers and the amorphous oxide semiconductor layers of the switching elements, where the blocking layer suppresses penetration of hydrogen separated from the hydrogenated amorphous silicon layers.

Image sensor and manufacturing method thereof

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Kanagawa, Japan

Fuminori Tamura