Asml Netherlands B.v.

Kla Tencor Corporation

Fuming Wang

Everhardus Cornelis Mos

Frank Staals

Stefan Hunsche

Thomas Theeuwes

Roy Werkman

Jochem Sebastiaan Wildenberg

Maxim Pisarenco

Erik Johannes Maria Wallerbos

Davit Harutyunyan

Vahid Bastani

Cornelis Johannes Rijnierse

Tom Van Hemert

Hugo Thomas Looijestijn

Fei Jia

Wei Fang

Damon Floyd Kvamme

Kevin A Peterlinz

Hidong Kwak

Hermanus Adrianus Dillen

Abraham Slachter

Daniel R Hennigan

Koenraad Van Ingen Schenau

Marleen Kooiman

Marie-Claire Van Lare

Sudharshanan Raghunathan

Aiqin Jiang

Vadim Yourievich Timoshkov

Esen Salcin

Uri Greenberg

Luis Alberto Colina Santamaría Colina

Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.

Method for calibrating simulation process based on defect-based process window

A method for correcting metrology data of a patterning process. The method includes obtaining (i) metrology data of a substrate subjected to the patterning process and (ii) a quality metric (e.g., a focus index) that quantifies a quality of the metrology data of the substrate; establishing a correlation between the quality metric and the metrology data; and determining a correction to the metrology data based on the correlation between the quality metric and the metrology data.

Metrology data correction using image quality metric

A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method includes obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

Method for determining contribution to a fingerprint

A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method including: obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.

Methods and systems for performing single wavelength ellipsometry (SWE) measurements with reduced measurement spot size are presented herein. In one aspect, a pupil stop is located at or near a pupil plane in the collection optical path to reduce sensitivity to target edge diffraction effects. In another aspect, a field stop is located at or near an image plane conjugate to the wafer plane in the collection optical path to reduce sensitivity to undesired optical-structural interactions. In another aspect, a linear polarizer acting on the input beam of the SWE system includes a thin, nanoparticle based polarizer element. The nanoparticle based polarizer element improves illumination beam quality and reduces astigmatism on the wafer plane. The pupil and field stops filter out unwanted light rays before reaching the detector. As a result, measurement spot size is reduced and tool-to-tool matching performance for small measurement targets is greatly enhanced.

Single wavelength ellipsometry with improved spot size capability

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Santa Clara, CA, United States of America

Fuming Wang