Kabushiki Kaisha Toshiba

Fumiko Yamaguchi

Hitoshi Higurashi

Akira Toriumi

Kiyoshi Kawamura

Alfred Hubler

According to the present invention, there is provided a correlation tunnel device capable of achieving a low power consumption without decreasing a drive force when a large-scale-integrated circuit is constituted. A correlation tunnel device according to the present invention comprises a first quantum dot structure including a first carrier confinement region having at least two discrete energy levels, a carrier conduction region adjacent to the first carrier confinement region, and a tunnel barrier arranged only between the first carrier confinement region and the conduction region, and a second quantum dot structure including a second carrier confinement region having at least two discrete energy levels, a carrier conduction region adjacent to the second carrier confinement region, and a tunnel barrier arranged only between the second carrier confinement region and the conduction region, wherein an energy level occupied by the carrier in the first carrier confinement region and an energy level occupied by the carrier in the second carrier confinement region have a correlation.

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Noda, Japan

Fumiko Yamaguchi