Semiconductor Energy Laboratory Co., Ltd.

Fumiko Terasawa

Yasuyuki Arai

Atsuo Isobe

Tamae Takano

A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.

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Atsugi, Japan

Fumiko Terasawa