National Institute of Advanced Industrial Science and Technology

Nissan Motor Company Limited

Fuji Electric Co., Ltd.

Fumiki Kato

Yoshinori Murakami

Masahiro Aoyagi

Shinji Sato

Naoya Watanabe

Hidekazu Tanisawa

Hiroshi Sato

Kazuhiro Mitamura

Katsuya Kikuchi

Yui Takahashi

Tung Thanh Bui

Hiroki Takahashi

Motohiro Suzuki

Kenichi Koui

Thanh Tung Bui

Lai Na Ma

Shunsuke Nemoto

A semiconductor device includes a semiconductor chip provided inside with a p-n junction, an opaque sealing resin covering a surface of the semiconductor chip, and a functional region arranged between the semiconductor chip and the sealing resin and configured to prevent light, which is generated when a forward current flows through the p-n junction and has a particular wavelength causing deterioration of the sealing resin, from reaching the sealing resin.

Semiconductor device

An object of the present invention is to stabilize and strengthen the strength of a bonding part between a metal electrode on a semiconductor chip and metal wiring connected thereto using a simple structure. Provided is a semiconductor device including a metal layeron a surface of a metal electrodeformed on a semiconductor chip, the metal layerconsisting of a metal or an alloy different from a constituent metal of the metal electrode, metal wiringis connected to the metal layervia a bonding part, wherein the constituent metal of the metal layeris a metal or an alloy different from the constituent metal of the metal electrode, and the bonding parthas an alloy region harder than the metal wiring

Bonding pad structure of a semiconductor device

Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1). 

Through electrode, manufacturing method thereof, and semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device according to the present invention comprises:

Method of manufacturing semiconductor device and semiconductor device manufacturing apparatus

Growing community of inventors

Tsukuba, Japan

Fumiki Kato