Semiconductor Components Industries, LLC

Fumika Kuramae

Shanghui Larry Tu

Takeshi Ishiguro

Ryuji Omi

In one embodiment, a semiconductor structure comprises a multi-portioned guard ring that includes a first portion and a second portion formed in a region of semiconductor material. A conductive contact layer forms a first Schottky barrier with the region of semiconductor material. The conductive contact layer overlaps the second portion and forms a second Schottky barrier that has an opposite polarity to the first Schottky barrier. The conductive contact layer does not overlap the first portion, which forms a pn junction with the region of semiconductor material.

Schottky diode structure with multi-portioned guard ring and method of manufacture

In one embodiment, a high voltage semiconductor device is formed with a first dielectric layer and a charge stabilization layer comprising a flowable glass formed over the first dielectric layer.

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Fuchu, Japan

Fumika Kuramae