Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Mirise Technologies Corporation

Fumihito Tachibana

Yuji Nagumo

Masashi Uecha

In a manufacturing method of a semiconductor device, a wafer in which multiple semiconductor elements is formed and having a first surface and a second surface opposite to each other is prepared, and a groove is formed on the first surface of the wafer along a boundary between adjacent semiconductor elements in the multiple semiconductor elements. The wafer is attached to a support plate in such a manner that the first surface of the wafer faces the support plate, and a scribing blade is pressed against the second surface of the wafer along the boundary to form a vertical crack inside the wafer along the boundary. Then, a breaking blade is pressed against the wafer along the boundary to cleave the wafer along the boundary.

Method of forming grooves and vertical cracks in a wafer comprising individual semiconductor elements to separate the semiconductor elements by cleaving the wafer along the grooves and the vertical cracks

Growing community of inventors

Nisshin, Japan

Fumihito Tachibana