Omron Corporation

Fumihito Kato

Takashi Kasai

Toshiyuki Takahashi

Masaki Munechika

Yasuhiro Horimoto

Hiroshi Imamoto

Fumihiko Sato

Shuichi Wakabayashi

Masayuki Inuga

A method for manufacturing a vibration sensor including forming a sacrifice layer at one part of a front surface of a semiconductor substrate of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate, forming a thin film protective film with a material having resistance to the etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer, forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer, opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate, forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layer isotropically by the etchant after the etchant reaches the front surface of the semiconductor substrate, and then etching the semiconductor substrate anisotropically by using crystal-oriented etching from a front side by the etchant spread to a space formed after the sacrifice layer is removed, and forming a holder for supporting the thin film on an upper surface of the semiconductor substrate by removing the thin film protective film partially.

Vibration sensor and method for manufacturing the vibration sensor

A vibration electrode plateis formed on the upper face of a silicon substratewith an insulating coat filminterposed in between. An opposing electrode plateis placed on the vibration electrode platewith an insulating coat film interposed in between, and acoustic holesare opened through the opposing electrode plate. Etching holesand, each having a semi-elliptical shape, are opened through the vibration electrode plateand the opposing electrode plateso as to face each other longitudinally. A concave sectionhaving a truncated pyramid shape is formed in the upper face of the silicon substrate, by carrying out an etching process through the etching holesand. The vibration electrode plateis held in the silicon substrateby a holding portionplaced between the etching holes

Capacitive vibration sensor and method for manufacturing same

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Kyoto, Japan

Fumihito Kato