Jsr Corporation

Fumihiro Toyokawa

Shin-ya Nakafuji

Gouji Wakamatsu

Hikaru Sugita

Tooru Kimura

Nakaatsu Yoshimura

Yousuke Konno

Takashi Okada

Takeshi Endo

Ryoji Tanaka

Yoshio Takimoto

Naoya Nosaka

Goji Wakamatsu

Takaomi Matsumoto

Hirofumi Senga

Yuushi Matsumura

Takumi Adachi

Takaaki Uno

Tomoaki Seko

Katsuhisa Mizoguchi

Masaki Moritsugu

Shingo Takasugi

Provided is a rubber material that is well-balanced in terms of tensile strength, low hysteresis loss property, wet grip property, and abrasion resistance. A hydrogenated conjugated diene-based polymer which is a hydrogenation product of a conjugated diene-based polymer including butadiene-derived structural units is produced by a method comprising a step of preparing a conjugated diene-based polymer having, at a side chain moiety thereof, a functional group capable of interacting with silica; and a step of hydrogenating the conjugated diene-based polymer so as to achieve a hydrogenation rate of 80 to 99% of butadiene-derived structural units included in the conjugated diene-based polymer.

Method for producing hydrogenated conjugated diene-based polymer, hydrogenated conjugated diene-based polymer, polymer composition, cross-linked polymer, and tire

A composition includes a compound including a partial structure represented by formula (1), and solvent. In the formula (1), Xand Xeach independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with the spiro carbon atom and the carbon atoms of the aromatic ring adjacent to Xor X; n1 and n2 are each independently an integer of 0 to 2; and the sum of k1 and k2 are each independently an integer of 1 to 8, wherein the sum of k1 and k2 is no less than 2 and no greater than 16. The compound is preferably represented by formula (2). The sum of k1 and k2 in the formula (1) is preferably no less than 3. 

Composition, method for producing patterned substrate, film and forming method thereof, and compound

A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.

Composition for forming a resist underlayer film, and pattern-forming method

A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R, Rand Reach independently represent a group represented by the formula (a). In the formula (a), Rrepresents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. Rrepresents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring. 

Composition for film formation, resist underlayer film and forming method thereof, pattern-forming method and compound

A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0&#xb0; C., and an organic solvent having a standard boiling point of no less than 150.0&#xb0; C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass.

Composition for forming resist underlayer film, and pattern-forming method

A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.

Method for forming resist under layer film, pattern forming method and composition for resist under layer film

This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300&#xb0; C. or higher to form a resist under layer film.

Pattern forming method

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Tokyo, Japan

Fumihiro Toyokawa