Hitachi-high-technologies Corporation

Hitachi, Ltd.

Hitachi High-tech Corporation

Fumihiro Sasajima

Osamu Komuro

Fumio Mizuno

Yoshihiro Kimura

Mitsuji Ikeda

Yoshinori Momonoi

Akihiro Miura

Muneyuki Fukuda

Hiroaki Mito

Hitoshi Namai

Maki Tanaka

Hidetoshi Morokuma

Yasuhiro Yoshida

Takashi Doi

Satoru Yamaguchi

Tatsuya Maeda

Noriaki Arai

Masayoshi Ishikawa

Osamu Nasu

Yoshimichi Sato

Masami Takano

Chie Shishido

Makoto Suzuki

Atsushi Miyamoto

Kei Sakai

Kazuhiro Ueda

Koichi Hayakawa

Mayuka Osaki

Katsumi Setoguchi

Saori Kato

An error cause estimation device comprising: a data pre-processing unit that uses data to be processed and generates training data that has an appropriate format for input to a machine learning model; and a model tree generation unit that generates error detection models that are training models for detecting errors and uses the training data as inputs therefor, and generates a model tree that expresses the relationship between error detection models by using a tree structure that has the error detection models as node therefor. Thus, it is possible to generate a training model that detects errors for each of a plurality of types of errors that occur, even when there has been no prior annotation of error causes.

Error factor estimation device and error factor estimation method

The present disclosure proposes a diagnostic system capable of properly identifying the cause of even an error for which multiple factors or multiple compound factors may be accountable. The diagnostic system according to the present disclosure is provided with a learning device for learning at least one of a recipe defining operations of an inspection device, log data describing states of the device, or specimen data describing characteristics of a specimen in association with error types of the device, and estimates the cause of the error by using the learning device (refer to FIG.).

Diagnostic system

A charged particle beam device is provided that performs proper beam adjustment while suppressing a decrease in MAM time, with a simple configuration without adding a lens, a sensor, or the like. The charged particle beam device includes: an optical element which adjusts a charged particle beam emitted from a charged particle source; an adjustment element which adjusts an incidence condition of the charged particle beam with respect to the optical element; and a control device which controls the adjustment element, wherein the control device determines a difference between a first feature amount indicating a state of the optical element based on the condition setting of the optical element, and a second feature amount indicating a state where the optical element reaches based on the condition setting and executes adjustment by the adjustment element when the difference is greater than or equal to a predetermined value.

Charged particle beam apparatus

A scanning electron microscope capable of properly determining a step of a step pattern formed on a sample regardless of combination of material of a groove of the step pattern and material of a projection of the step pattern, the scanning electron microscope includes a beam source, a detection unit having a first detection unit that detects a secondary electron emitted from the sample at an angle between an optical axis direction of the primary electron beam which is equal to or less than a predetermined value, and a second detection unit that detects a secondary electron emitted from the sample at an angle between the optical axis direction of the primary electron beam which is greater than the predetermined value, and a processing unit to obtain information on the step pattern using the information on a ratio between signals outputted from the first and the second detection unit.

Scanning electron microscope

The invention has an object to provide a charged particle beam device in which it is possible to perform proper beam adjustment while suppressing a decrease in MAM time, with a simple configuration without adding a lens, a sensor, or the like. In order to achieve the above object, according to the invention, there is provided a charged particle beam device including: an optical element which adjusts a charged particle beam emitted from a charged particle source; an adjustment element which adjusts an incidence condition of the charged particle beam with respect to the optical element; and a control device which controls the adjustment element, wherein the control device determines a difference between a first feature amount indicating a state of the optical element based on the condition setting of the optical element, and a second feature amount indicating a state where the optical element reaches based on the condition setting and executes adjustment by the adjustment element when the difference is greater than or equal to a predetermined value.

An object of the invention is to provide: a sample unevenness device that stably identifies unevenness formed on a sample, regardless of a pattern formation state or image acquisition conditions; and a computer program. As an aspect to achieve the above object, a device and computer program are proposed that obtain the area of a plurality of regions formed by a profile waveform of a given threshold or lower for a profile formed based on a detection signal obtained by scanning with a charged particle beam with respect to the sample; and determine either or both of that a site corresponding to a region with a relatively large area is a concave portion or that a space portion and a site corresponding to a space with a relatively small area is a convex portion or a line portion.

Pattern determination device and computer program

A charged particle radiation apparatus includes a control device that switches between a first charged particle beam and a second charged particle beam, the first charged particle beam being scanned to acquire an image and a waveform signal, the second charged particle beam being scanned over a sample before the scan of the first charged particle beam and used to charge the sample more than the first charged particle beam; wherein the control device is configured to acquire at least one of signal waveform data and image data about a pattern formed on the sample in accordance with a scan performed on the sample by the second charged particle beam, and to stop, when the acquired data has proved to be indicative of a predetermined state, the scan of the second charged particle beam.

Charged particle radiation apparatus

In measuring pattern with large process fluctuation, correct measurement cannot be carried out if noises, such as pattern that is not the subject to be measured, and dirt, are present in periphery of pattern to be measured in previously registered measurement region. Among the image data of sample, predetermined region aligned by pattern matching is set as region not to be measured that is excluded from subjects of pattern measurement. For example, in measuring pattern with large process fluctuation, only region including pattern with small process fluctuation is used in pattern matching, while in measuring the pattern, predetermined region, which was used in pattern matching and aligned, is set as region not to be measured. Stable pattern measurement can be easily carried out with respect to pattern with large process fluctuation, without being affected by region where measurement region and region not to be measured overlap with each other.

Pattern measuring method, pattern measuring apparatus, and program using same

An object of the present invention is to provide an edge detection technique and equipment which are capable of stably detecting an edge by suppressing the influence of noise even in the case where the image is obtained by charged particle radiation equipment, such as a scanning electron microscope and has a low S/N ratio. More specifically, the present invention is to propose a technique and equipment which are configured to determine a peak position (edge) on the basis of the following two edge extraction techniques. That is, the present invention is to propose a technique and equipment wherein at least two peaks are formed by using, as edge detection techniques, for example, one peak detection technique having a relatively high sensitivity and the other peak detection technique which is relatively less susceptible to the influence of noise than the one peak detection technique, and wherein a position where the peaks coincide with each other is determined as a true peak position (edge position).

Edge detection technique and charged particle radiation equipment

A pattern matching method for a scanning electron microscope comprises a step of performing pattern matching of only an upper layer pattern between an image () in which a pattern consisting of plural layers is represented and a template () in which the upper layer pattern of the plural layer pattern is selectively represented, thereby identifying the position of the pattern consisting of the plural layers. Then, information about the upper layer pattern is subtracted from the image (), thus extracting shape information () about the lower layer pattern. Consequently, stable positioning or selective information extraction on a certain layer is enabled regardless of the state of the depths of a pattern formed in three dimensions or of the charge state of a sample.

Pattern matching method and image processing device

Provided is a method for determining the magnification of a pattern searching template of a scanning electron microscope. The determining method comprises: acquiring a first image initially at a first magnification; then acquiring a second image which contains a pattern image displayed on the first image at a second magnification lower than the first magnification; making the size of the first image coincident with the size of a third image which cut out a portion of the second image; thereafter determining the correlation value between the first image and the third image; and setting the second magnification as the magnification of a pattern searching template, in the case where the correlation value is equal to or higher than a predetermined value. As a result, a condition for acquiring a search area can be properly set, when pattern recognition is performed by means of the template.

Pattern-searching condition determining method, and pattern-searching condition setting device

The present invention achieves the process of easily registering a template which is prepared for a size change in pattern matching for specifying a measurement point, and high-speed pattern matching by which adequate position accuracy can be obtained in measurement. The present invention includes means for automatically calculating the size and position of a positioning template different from a measurement point itself when the measurement point is designated, to display a template having the calculated size and position. The present invention further includes means for performing pattern matching by using all or some of a plurality of divided templates and extracting templates having a similar positional relationship to the original positional relationship.

Image processing system and scanning electron microscope

The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

Microstructured pattern inspection method

Information indicating the reason for a failure of template matching is provided. Difference information between a first image, which is referred to as a template, and a third image that is selected by the operator from a second image and that is larger than the template is displayed.

Growing community of inventors

Hitachinaka, Japan

Fumihiro Sasajima