Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Socionext Inc.

Fumihiro Kimura

Yoichi Matsumura

Junichi Shimada

Takeya Fujino

Nobuyuki Iwauchi

Yukiji Hashimoto

Masahiko Toyonaga

Takahiro Ichinomiya

Junichi Yano

Kiyohito Mukai

Mitsumi Ito

Masanori Tsutsumi

Takuya Yasui

Kazuhiro Satoh

Mitsumi Itou

Chie Kabuo

Hirofumi Miyashita

Noriko Koshita

Minako Fukumoto

Takako Ohashi

Tatsuo Gou

Hirofumi Taguchi

Wataru Satou

Masayuki Matsuda

Takayuki Araki

In a semiconductor device, a lower chip includes a first group of connection terminals provided on a straight region including a corner region and a region extending from the corner region along one side. An upper chip includes a second group of connection terminals. The upper chip and the lower chip are arranged so that the first group of connection terminals at least partially overlaps with the second group of connection terminals. The first group of connection terminals is at least partially electrically connected to the second group of connection terminals.

Semiconductor device

A semiconductor device including a plurality of cells having an antenna protection element and a cell other than the antenna protection element; and a first dummy pattern and a second dummy pattern arranged in a layer above the plurality of cells. Further, the first dummy pattern overlaps with the antenna protection element, the second dummy pattern overlaps with the cell other than the antenna protection element, and a first layout rule of the first dummy pattern is different from a second layout rule of the second dummy pattern.

Semiconductor device and semiconductor device layout designing method

A method for designing an interconnect structure of an interconnect layer in a semiconductor integrated circuit device includes the steps of: (a) inputting layout data of the semiconductor integrated circuit device; (b) controlling an air gap exclusion area based interconnects in the layout data; and (c) outputting layout data including the air gap exclusion area determined in the step (b).

Interconnect structure of semiconductor integrated circuit, and design method and device therefor

Verification of the pattern area ratio of a semiconductor integrated circuit device or the pattern occupancy ratio in a check window set for the semiconductor integrated circuit device is performed on an assumption that a dummy pattern defined by process conditions is placed in an unoccupied region of the semiconductor integrated circuit device or in an unoccupied region in at least one instance provided in the semiconductor integrated circuit device.

Area ratio/occupancy ratio verification method and pattern generation method

Prevention of coming off of the layer where the contacts are formed and the isolating film and breakage of the LSI is realized. To do this, a contact array is provided in which a plurality of contacts is formed so as to be aligned in the vertical and the horizontal directions. In the contact array, the contact formation spacing in both of the vertical and the horizontal directions is larger than the contact formation spacing determined by the manufacturing process. Consequently, the number of contacts formed in the contact array can be reduced to not more than the number of contacts that can be formed in the unit area determined by the process, so that prevention of coming off of the layer where the contacts are formed and the isolating film and breakage of the LSI can be realized.

Semiconductor integrated circuit and method of manufacturing the same

A standard cell for a plurality of power supplies comprises a first power line and a second power line electrically isolated from the first power line. An N well is arranged in spaced relation with the whole peripheral boundaries of the standard cell. In the case where the standard cells are arranged adjacently to each other in the direction along the power lines or in the direction orthogonal thereto, the N well in the standard cell for a plurality of power supplies is isolated from the N wells of the adjacent standard cells in the direction along the power lines or in the direction orthogonal thereto, as the case may be.

Standard cell for plural power supplies and related technologies

Where there are wirings with different film thicknesses or a sheet resistance in a non-scraped state of a wiring layer cannot be obtained as a result of the CPM technique, a wiring resistance according to a film thickness when an LSI is manufactured is acquired by automatic processing to reduce its difference from a real resistance, and accurate voltage drop analysis is carried out to reduce malfunction in a real chip. In a semiconductor circuit device with a plurality of kinds of film thicknesses in the same wiring layer, with a variation occurring in the wiring film thickness when wirings are formed on a silicon wafer, or a warp occurring in an upper layer because the stacking of lower layers is not uniform in the manufacturing process of the wiring, an error of the wiring resistance due to the difference in the film thickness or warp of the wiring is corrected to produce a virtual layout data.

Wiring resistance correcting method

The layout method of a semiconductor integrated circuit device according to the present invention includes a net list modification process for adding a cell to a flip-flop group directly connected to the clock source, a process for generating gated circuit division information which allocates the division number of the gated circuit and the drive ability of the cell so that the drive ability of the cell is selected and the delay value becomes uniform, a gated circuit division process for forming a cluster by dividing each of the gated circuits through clustering, a gated cell division process for allocating to each cluster the same number of gated cells as that of the formed clusters and a gated cell front stage CTS process in order to reduce the skew of the clock signal from the clock source via the gated cell to the flip-flop and to control the power consumption of the clock signal part.

Method of layout for LSI

The wire length of an LSI is estimated from a netlist describing connection information of the LSI and a cell library storing information as to cells used in the LSI design, with performing no rough placement and rough wiring by a layout system. Information necessary for wire length estimation is extracted from the netlist and the cell library. A net basic wire length is determined for each fan-out. In a net wire length estimating step, a net wire length for each fan-out is estimated by making reference to the determined net basic wire length and taking into account net expansion due to the cell distribution in a cell placement. Additionally, taking into account a terminal distribution and the aspect ratio of an estimation-target block, a correction on the estimated net wire length is made. From the corrected net wire length, the total wire length of the estimation-target block is estimated.

LSI wire length estimation and area estimation

Growing community of inventors

Nara, Japan

Fumihiro Kimura