Daikin Industries, Ltd.

Akita University

Nihon University

Fumihiro Kamiya

Tsuyoshi Noguchi

Mitsushi Itano

Takehiko Kezuka

Mitsutoshi Jikei

Kazuya Matsumoto

Takuya Arase

Shigeo Daimon

Makoto Suyama

Masayuki Tsuji

Yoshiyuki Shibuya

Tadashi Ino

Seiichi Hirano

Takashi Kanemura

Tadashi Kanbara

Shingo Nakamura

Ikuo Kitamura

Masato Tanaka

Nobukatsu Nemoto

Kunio Nishi

Yoshinari Taguchi

Sumito Yamakawa

Ikuo Kiatamura

Shushi Yamada

Tadatake Sakurada

Yoshiho Yanagida

A composition containing a fluorine-containing polymer and a silicon oxide represented by formula: SiO, where 0<x<2. In a preferred embodiment, the composition contains a cross-linking agent. Also disclosed is a crosslinked product which may be a sealing material obtained by crosslinking the composition.

Composition containing fluorine-containing polymer and crosslinked article

A composition including a composite particle and a fluorine-containing polymer, wherein the composite particle comprises a polymer and an inorganic particle dispersed in the polymer, and the polymer contains an acid group-containing monomer unit. Also disclosed is a molded article obtained from the composition.

Composition and molded article containing fluorine-containing polymer

A composition including a fluorine-containing polymer and a silicon-containing compound, wherein the phosphorus content in the composition is 20 ppm or less. Also disclosed is a molded article obtained from the composition, and a second composition containing a fluorine-containing polymer and a silicon-containing polymer, wherein a content of an amide solvent in the composition is less than 1000 ppm.

Composition and molded article

A composition having excellent scorch resistance and storage stability, the composition containing composite particles and a fluoropolymer, and the composite particles including a polymer and inorganic particles dispersed in the polymer.

Composition comprising fluoropolymer and molded article

The invention provides a novel polymer, a composition, and a molded article. The polymer contains a constitutional unit represented by the following formula (1): wherein Xand Xare the same as or different from each other, and are each a hydrogen atom, an alkyl group optionally containing a fluorine atom, or a phenyl group; Yis an oxygen atom or a sulfur atom; Rfis a hydrogen atom or an alkyl group optionally containing a fluorine atom; and a is an integer of 1 to 4.

Polymer, composition, and molded article

The invention provides a composition capable of providing a molded article that has excellent heat resistance and a small weight change against oxygen plasma exposure and fluorine plasma exposure during a semiconductor manufacturing step. The composition contains a fluorine-containing polymer and a hyperbranched polymer of a cage silsesquioxane with a specific structure.

The invention provides a composition capable of providing a molded article that has excellent heat resistance and a small weight change against both fluorine plasma exposure and oxygen plasma exposure during a semiconductor manufacturing step. The composition contains a fluorine-containing polymer and a cage silsesquioxane having a specific structure.

The present invention provides a resist-removing solution for low-k film and a cleaning solution for via holes or capacitors, the solutions comprising hydrogen fluoride (HF) and at least one member selected from the group consisting of organic acids and organic solvents. The invention also provides a method of removing resist and a method of cleaning via holes or capacitors by the use of the solutions.

Removing solution

The present invention provides a wafer treating solution in which at least one of C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.1 to 1000 ppm into a 20 to 60 wt % of hydrogen fluoride (HF), and the remainder is water (100 wt % in total), and a method for preparing a low concentration of wafer treating solution by adding water, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F or the like, into the above solution. The present invention also provides a wafer treating solution in which at least one of surfactants represented by C.sub.n H.sub.2n+1 ph(SO.sub.3 M)Oph(SO.sub.3 M) wherein ph is a phenylene group, n is 5 to 20, and M is a hydrogen or salt; C.sub.n H.sub.2n+1 phO(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein ph is a phenylene group, n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt; and C.sub.n H.sub.2n+1 O(CH.sub.2 CH.sub.2 O)mSO.sub.3 M wherein n is 5 to 20, m is 0 to 20, and M is a hydrogen or salt, is dissolved in 0.01 to 1000 ppm in at least one of HF, H.sub.2 O.sub.2, HNO.sub.3, CH.sub.3 COOH, NH.sub.4 F, HCl, H.sub.3 PO.sub.4 and an ammonium hydroxide represented by a formula:

Wafer treating solution and method for preparing the same

Wafer-cleaning solution and process for the production thereof

Coated acicular fine particulate materials, processes for preparing same

Acicular fine particles containing metallic iron, iron carbide and

Growing community of inventors

Osaka, Japan

Fumihiro Kamiya