Canon Kabushiki Kaisha

Fumihiro Inui

Masanori Ogura

Katsuhito Sakurai

Toru Koizumi

Daisuke Yoshida

Hiroki Hiyama

Masaru Fujimura

Tomoko Eguchi

Tetsuya Itano

Mineo Shimotsusa

Junji Iwata

Masahiro Kobayashi

Hideo Kobayashi

Yoichi Wada

Koichi Fukuda

Yusuke Onuki

Kohichi Nakamura

Hajime Ikeda

Takahiro Shirai

Kohei Okamoto

Yoshiaki Takada

Hidekazu Takahashi

Koichiro Iwata

Tomoyuki Noda

Yu Arishima

Yuichiro Hatano

Takeshi Ichikawa

Takanori Watanabe

Akira Okita

Mahito Shinohara

Hiroaki Sano

Kazuyuki Shigeta

Taro Kato

Takamasa Sakuragi

Hiraku Kozuka

Hiromasa Tsuboi

Yoshinobu Sekiguchi

Kazunari Kawabata

Takehiko Soda

Yasuharu Ota

Kazuhiro Morimoto

Hisashi Takado

Ginjiro Toyoguchi

Wataru Endo

Seiichiro Sakai

Toshiki Tsuboi

Hideyuki Ito

Provided is a photoelectric conversion device including: a first substrate having a first face; photodiodes arranged in the first substrate and each having a first region that generates signal charges by photoelectrically converting an incident light and a second region that receives the signal charges moving from the first region; a first isolation region arranged in the first substrate at a first depth and including a first portion extending in a first direction so as to isolate the second regions from each other; and a second isolation region arranged in the first substrate at a second depth deeper than the first depth from the first face, and including a second portion extending in a second direction intersecting the first direction in plan view so as to isolate the first regions from each other, and the first and second portions are partially overlapped with each other in plan view.

Photoelectric conversion device, imaging system, and mobile apparatus

A unit circuit includes a photoelectric conversion element, an output transistor including an input node and configured to output a signal based on a charge from the photoelectric conversion element, a reset transistor, and a first transistor connected to the input node and configured to change a capacitance of the input node. A first control signal supplied to a gate electrode of the first transistor has at least three types of voltages.

Photoelectric conversion device, imaging system, moving body, and stackable semiconductor device

A photoelectric conversion apparatus includes a semiconductor substrate, a floating diffusion, an amplifying transistor, first and second contact plugs, a wire, and a metal portion. The semiconductor substrate has a first plane and a second plane to be entered by light, and includes a photoelectric conversion element. The amplifying transistor includes a first gate electrode. The first contact plug is connected to the floating diffusion. The second contact plug is connected to the first gate electrode. The wire is configured to electrically connect the first gate electrode and the floating diffusion to each other. The metal portion, which is arranged between the first plane and a third plane, covers at least a part of the photoelectric conversion element in a planar view, and has an opening over which at least a part of the wire is superimposed in a planar view.

Photoelectric conversion apparatus having metal portion, imaging system, movable body, and semiconductor chip for stacking

A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.

Solid-state imaging device and manufacturing method therefor

An apparatus includes a photodiode including an anode and a cathode, a switch connected to a node of one of the anode and the cathode and to a power supply line via which a driving voltage is supplied, and functioning to switch a resistance value between the node and the power supply line, and a generation unit configured to generate a pulse signal for controlling switching of the switch. The apparatus is operable in one of two modes including a first mode and a second mode, the second mode being usable in a lower luminance condition than a luminance condition in the first mode. In an exposure period for acquiring one frame of signals, the number of pulse signals in the second mode is smaller than in the first mode.

Photoelectric conversion apparatus and photodetection system

A semiconductor apparatus includes a stack of first and second chips each having a plurality of pixel circuits arranged in a matrix form. The pixel circuit of the a-th row and the e1-th column is connected to the electric circuit of the p-th row and the v-th column. The pixel circuit of the a-th row and the f1-th column is connected to the electric circuit of the q-th row and the v-th column. The pixel circuit of the a-th row and the g1-th column is connected to the electric circuit of the r-th row and the v-th column. The pixel circuit of the a-th row and the h1-th column is connected to the electric circuit of the s-th row and the v-th column.

Semiconductor apparatus and equipment

An imaging device is provided in which a shield wiring is arranged between signal lines of a first set out of a plurality of signal lines, and, in which signal lines of a second set out of a plurality of signal lines are adjacent to each other.

Imaging device, imaging system, and moving object

Photoelectric conversion device includes stacked first and second substrates. The first substrate includes pixel array, first joint portion arranged in the pixel array and connected to pixels in the pixel array, and power supply pad connected to the first joint portion. The second substrate includes readout circuit to read signal from the pixel array via signal line, and second joint portion jointed to the first joint portion. The readout circuit includes limiter circuit to limit amplitude of potential of the signal line. Power supply terminal of the limiter circuit is connected to the second joint portion, and power supply potential applied to the power supply pad is supplied to the pixels and supplied to the power supply terminal of the limiter circuit via the first and second joint portions.

Photoelectric conversion device and equipment

Provided is a photoelectric conversion device including: a pixel including a plurality of photoelectric conversion units; and a select unit configured to control each of the plurality of photoelectric conversion units to be in an active state or an inactive state. The plurality of photoelectric conversion units has a first group including a first avalanche diode and a second group including a second avalanche diode. The select unit controls the second group to be in the inactive state in a first case of controlling the first group to be in the active state, and the select unit controls the first group to be in the inactive state in a second case of controlling the second group to be in the active state. The pixel has no photoelectric conversion unit which is in the active state in both the first case and the second case.

A photoelectric conversion apparatus includes a first substrate including a pixel array, a second substrate including a readout circuit configured to read out a signal from the pixel array, and a drive terminal to which a drive potential is externally applied. The readout circuit includes a first node to which the drive potential is supplied from the drive terminal via an electrically conductive line arranged in the pixel array, and a second node to which the drive potential is supplied from the drive terminal without going through the pixel array.

Photoelectric conversion apparatus and equipment

A method of driving a solid-state imaging device includes: setting voltage of an input node of an amplifier unit to a first voltage by using logarithmic compression to convert current generated by charges overflowing from a photoelectric conversion unit to the input node into voltage corresponding to the current, transferring charges from the photoelectric conversion unit to the input node, setting voltage of the input node to a second voltage by converting the charges into voltage corresponding to the charges, at the amplifier unit, outputting a first signal based on the first voltage and a second signal based on the second voltage, performing the logarithmic compression by using a diode connected to the input node, and acquiring, as a reference signal, an output of the amplifier unit when the input node is set to a third voltage defined in accordance with a threshold voltage of the diode.

Solid-state imaging device and method of driving solid-state imaging device

Growing community of inventors

Yokohama, Japan

Fumihiro Inui