Fujitsu Corporation

Fumihiko Taniguchi

Akira Takashima

Koji Honna

Hideharu Sakoda

Yoshikazu Kumagaya

Toshihisa Higashiyama

Masataka Mizukoshi

Yoshiharu Kato

Hirohisa Matsuki

Eiji Watanabe

Satoru Kawamoto

Eiji Yoshida

Kazuo Teshirogi

Haruo Kojima

Akira Okada

Tetsuya Hiraoka

Hidehiko Akasaki

Tadashi Uno

Hiroyuki Matsui

Hiroshi Onodera

Fumihiko Ando

Michio Hayakawa

Kunio Kodama

Kazunari Kosakai

Sachiko Nogami

Kouhei Orikawa

A fingerprint sensor apparatus can provide a normal fingerprint sensor function even when a mold flash is formed. The fingerprint sensor apparatus recognizes a pattern of a fingerprint by being contacted by a finger. A semiconductor chip has a surface on which a sensor part is formed. The semiconductor chip is encapsulated by a seal resin. The sensor part is exposed in a bottom of an opening formed in the seal resin part. A distance between an edge of the bottom of the opening and an edge of the sensor part is 0.3 mm to 0.1 mm.

Fingerprint sensor apparatus and manufacturing method thereof

The present invention relates to a semiconductor device having an MCP (Multi Chip Package) structure in which a plurality of semiconductor chips are mounted in the same package, a manufacturing method therefor and a semiconductor Substrate used therein. Atop a first semiconductor chip that is a memory chip is mounted a second Semiconductor chip that is a logic chip, with a first functional chip and a second functional chip that together form the first semiconductor chip being joined together via an unsliced scribe line. Additionally, a first functional chip and a second functional chip are given the same chip composition (32-bit memory) and respectively rotated 180 degrees relative to each other. These configurations are intended to improve performance, reduce costs and improve yield.

Multi chip package structure having a plurality of semiconductor chips mounted in the same package

A semiconductor device comprises: a semiconductor element; an external terminal used for an external connection; an interposer having the semiconductor element mounted on a first surface thereof and having the external terminal formed on a second surface thereof opposite to the first surface so as to electrically connect the semiconductor element and the external terminal; a resin sealing the semiconductor element on the first surface; and an interconnecting portion formed within the resin, the interconnecting portion having a first connecting part electrically connected to the external terminal and having a second connecting part exposed on an outer surface of the resin.

Semiconductor device having an interconnecting post formed on an interposer within a sealing resin

In a semiconductor device having a built-in contact-type sensor, a height of a surrounding part of a sensor part from the exposed surface of the sensor part is reduced. The semiconductor device has a semiconductor element having a built-in sensor. The semiconductor element has a circuit forming surface and a back surface opposite to the circuit forming surface. The contact-type sensor and electrodes are formed on the circuit forming surface. Back electrodes are formed on the back surface. Conductive members extend through the semiconductor device from the electrodes to the back electrodes. A protective film covers the circuit forming surface in a state where the surface of the contact-type sensor is exposed. External connection terminals are electrically connected to the back electrodes.

Semiconductor device having a built-in contact-type sensor and manufacturing method thereof

In a semiconductor element stacking structure, each electrode of each of the stacked semiconductor elements can be drawn out with a simple structure. A plurality of semiconductor elements are arranged in a stacked state, each of the semiconductor elements having a circuit forming surface on which electrodes are formed. A resin layer is formed on the circuit forming surface of each of the semiconductor elements. The resin layer has an outer configuration the same as that of each of the semiconductor elements. A plurality of bonding wires are embedded in the resin layer. One end of the each of the bonding wires is connected to respective one of the electrodes and the other end of each of the bonding wires is exposed on a side surface of the resin layer.

Semiconductor device having bonding wires serving as external connection terminals

A semiconductor device includes a semiconductor chip, solder balls, a printed wiring substrate on which the semiconductor chip is provided and which serves to electrically connect the semiconductor chip and the solder balls. When such a semiconductor device is mounted on a motherboard, at least one through-aperture is in advance formed on the printed wiring substrate oppositely to the semiconductor chip. After the solder balls are soldered to the motherboard, an under-filler is introduced from either of a space between the semiconductor chip and the printed wiring substrate or a space between the printed wiring substrate and the motherboard, thus flowing from one space into the other space via the through-aperture.

Semiconductor device and structure and method for mounting the same

A plurality of semiconductor devices can be mounted on a mounting board in a three-dimensional structure by stacking one on another with a simple structure. A semiconductor element is mounted on a first surface of an interposer. Electrode pads connected to the semiconductor element are arranged around the semiconductor element on the first surface of the interposer. Protruding electrodes are provided on the respective electrode pads. Through holes are formed in the interposer so as to extend from a second surface opposite to the first surface of the redistribution substrate to the respective electrode pads. The semiconductor element is encapsulated by a seal resin. Each of the protruding electrodes is higher than the sealed portion of the semiconductor element.

Semiconductor device having protruding electrodes higher than a sealed portion

A semiconductor device manufacturing method comprises the steps of forming solder bumps on an underlying metal film of a semiconductor device, and placing the semiconductor device and the solder layer in a reduced pressure atmosphere containing formic acid to form the solder bumps. Accordingly, the solder bumps can be formed without flux generating voids in the solder layer. Furthermore, the cleaning required after the solder bumps are formed can be omitted.

Method of manufacturing solder bumps and solder joints using formic acid

The semiconductor device includes a semiconductor chip, a tape for mounting the semiconductor chip thereto, an adhesive resin layer interposed between the semiconductor chip and the tape, and solder balls attached to the tape. The method of fabricating the semiconductor chip comprises the step of forming at least one hole in the tape, after fixing the semiconductor chip to the tape through the adhesive resin layer. Also, the TAB tape is made of polyimide having high water permeability.

Method of fabricating semiconductor having through hole

The semiconductor device includes a semiconductor chip, an FPC tape for mounting the semiconductor chip thereto, a mold resin for protecting the semiconductor chip, and metal balls provided on the FPC tape for connecting the semiconductor chip to a circuit board. The mold resin has the glass transition temperature not lower than 200.degree. C., the coefficient of linear expansion in the range from 13 to 18 ppm/.degree. C., and Young's modulus in the range from 1500 to 3000 kg/mm.sup.2, whereby warpage of the semiconductor device is mitigated. The semiconductor device can also include a buffer layer. The semiconductor device can be manufactured by collectively molding a plurality of semiconductor chips mounted to the FPC tape and by cutting the molded article into individual semiconductor packages.

Resin molded semiconductor device and method of manufacturing

A semiconductor device includes an insulating substrate; a semiconductor chip mounted on a front surface of the insulating substrate and provided with electrode pads; bonding pads provided on the front surface of the insulating substrate and electrically connected to the semiconductor chip by means of wires; ball bumps provided on a back surface of the insulating substrate in rows in a grid-like manner; electrode patterns provided in rows on the front surface of the insulating substrate so as to correspond to positions of the ball bumps, respectively, the electrode patterns being connected to the ball bumps through holes formed in the insulating substrate; and interconnection patterns electrically connecting the bonding pads and the electrode patterns. The bonding pads may be provided in a plurality of rows, each of the rows being provided between one of neighboring pairs of rows of the electrode patterns. Alternatively, the bonding pads may be provided in a staggered manner between one of neighboring pairs of rows of the electrode patterns.

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Kawasaki, Japan

Fumihiko Taniguchi