Fujifilm Corporation

Fuji Photo Film Company, Limited

Fumihiko Mochizuki

Atsushi Tanaka

Hiroyuki Kobayashi

Masayuki Suzuki

Koji Takaku

Masahiro Takata

Shinya Ogikubo

Koichi Kimura

Mitsuyoshi Ichihashi

Tsutomu Sasaki

Masashi Ono

Shuji Takahashi

Hideaki Tanaka

Hirochika Nakamura

Yoshikazu Hishinuma

Kenichi Nakagawa

Seigo Nakamura

Koji Hironaka

Kohei Arakawa

Takahiro Sano

Takeshi Hama

Yasuhiro Aiki

Kenichiro Inoue

An object of the present invention is to provide a resonant sensor having excellent sensitivity and selectivity with respect to a component to be detected that is contained at a low concentration in the system. A resonant sensor of the present invention has a receiving layer that contains a polymer having a repeating unit represented by Formula (1). In Formula, Rrepresents an alkyl group. A plurality of R's may be the same as or different from each other. Rrepresents a hydrogen atom, an alkyl group, or an aryl group. 

Resonant sensor

A gas detection method using a gas detection element obtained by laminating a fixed support, a first electrode (), a dielectric sensor (), a second electrode (), and a gas adsorption film (), in this order, the method including: a step of applying a first signal resonantly driving the dielectric sensor () between electrodes of the first electrode () and the second electrode (), and detecting gas adsorbed on the gas adsorption film based on a change of a resonant frequency of the dielectric sensor; and a step of heating the dielectric sensor () by applying a second signal between the electrodes after the detection of gas and desorbing gas adsorbed in the gas adsorption film; a gas detection system capable of performing the method; and a gas desorption method appropriate for applying this gas detection method.

Gas detection method, gas detection system, and gas desorption method

There is provided a method of manufacturing a semiconductor element including: forming a semiconductor film of which a principal constituent is an oxide semiconductor; forming a first insulation film on a surface of the semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a second insulation film on a surface of the first insulation film, wherein a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (&#xb0; C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0&#x3c;Z&#x3c;L=8&#xd7;10&#xd7;T&#x2212;0.0092&#xd7;T+3.6&#xd7;T&#x2212;468&#xb1;0.1 is satisfied.

Semiconductor element manufacturing method

There is provided a method of fabricating a field effect transistor including: forming a first oxide semiconductor film on a gate insulation layer disposed on a gate electrode; forming a second oxide semiconductor film on the first oxide semiconductor film, the second oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment at over 300&#xb0; C. in an oxidizing atmosphere; forming a third oxide semiconductor film on the second oxide semiconductor film, the third oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a source electrode and a drain electrode on the third oxide semiconductor film.

Method for producing field effect transistor, field effect transistor, display device, image sensor, and X-ray sensor

There is provided an amorphous oxide semiconductor material including an amorphous oxide semiconductor including In, Ga and Zn, wherein when In:Ga:Zn=a:b:c denotes an element composition ratio of the oxide semiconductor, the element composition ratio is defined by the range of a+b=2 and b&#x3c;2 and c&#x3c;4b&#x2212;3.2 and c&#x3e;&#x2212;5b+8 and 1&#x2266;c&#x2266;2.

Amorphous oxide semiconductor material, field-effect transistor, and display device

A method of manufacturing an electronic device includes: preparing a film-attached substrate including a substrate, and an oxide semiconductor film containing In, Ga, and Zn and a metal film containing at least one of W or Mo provided in this order on the substrate; and wet-etching the metal film of the film-attached substrate using an etching liquid of which a main component is hydrogen peroxide under conditions such that an etching selection ratio between the metal film and the oxide semiconductor film (etching rate of the metal film/etching rate of the oxide semiconductor film) is 100 or higher.

Electronic device, method of manufacturing the same, display and sensor

A piezoelectric device includes a lower electrode, a piezoelectric film and an upper electrode laminated in this order on a support. An oxide film containing a material that forms a lower electrode is formed on a side surface of the piezoelectric film. The piezoelectric device is produced such that an upper electrode and a piezoelectric film are patterned by dry-etching through a mask formed on a side of the upper electrode of the piezoelectric device member and thereafter a side surface of the patterned piezoelectric film (a film adhered to a side wall) is oxidized to form an oxide film.

Piezoelectric device and method of production thereof

The piezoelectric device includes a substrate, a first electrode deposited on the substrate, a piezoelectric film deposited on top of at least a part of the first electrode by vapor phase deposition, a second electrode deposited on the piezoelectric film and having a water vapor transmission rate of not more than 1 g/m/day, and at least one protective film that covers at least peripheries of the second electrode and the piezoelectric film and which has an opening in a position corresponding to the piezoelectric film except the periphery thereof. The piezoelectric device has satisfactory moisture resistance and is capable of effectively preventing the ingress of moisture into the piezoelectric film.

Piezoelectric device and liquid-ejecting head

A small thin film movable element comprises; a movable portion supported elastically deformably and having a movable electrode at at least a portion of the movable portion; and a fixed electrode arranged to be opposed to the movable portion, wherein the movable portion is displaced by an electrostatic force in accordance with a voltage applied to the movable electrode and the fixed electrode, and wherein the voltage applied in displacing the movable portion falls in a range equal to or lower than a static pull-in voltage for bringing the movable portion into contact with a side of the fixed electrode against a resistance force generated in accordance with an amount of displacing the movable portion and equal to or higher than a minimum dynamic pull-in voltage for bringing the movable portion into contact with the side of the fixed electrode by being compounded with an inertia force generated in accordance with an operation of the movable portion.

Small thin film movable element, small thin film movable element array and method of driving small thin film movable element array

A small thin film movable element comprises: a movable portion supported elastically deformably and having a movable electrode at least a portion of the movable portion; and a fixed electrode arranged to be opposed to the movable portion, wherein the movable portion is displaced by an electrostatic force in accordance with a voltage applied to the movable electrode and the fixed electrode, and wherein the movable portion comprises a vibration applying unit that applies a vibration to the movable portion at least immediately before displacing operation of the movable portion.

Small thin film movable element, small thin film movable element array and method of driving small thin film movable element

A transition time is a time from a state where a movable portion has been rotationally displaced in the first direction and stopped to a state where driving portions apply the physical action forces to the movable portion to rotationally displace the movable portion in the second direction, which is different from the first direction, and the movable portion reaches a final displacement position. An elastic force value of the elastic supporting portion and the transition time have such a relationship that when the elastic force value of the elastic supporting portion is equal to a certain value, the transition time takes a local maximum value. The elastic force value of the elastic supporting portion is equal to or less than the certain value at which the transition time takes the local maximum value.

Micro-electro mechanical device, micro-electro mechanical device array, light modulation device, micro-electro mechanical light modulation device, micro-electro mechanical light modulation device array and image forming apparatus using the same

An optical functional film comprises a multilayer film formed by stacking a plurality of films. The plurality of films are formed by a same material and refractive indices of adjacent films are different.

Optical functional film, method of forming the same, and spatial light modulator, spatial light modulator array, image forming device and flat panel display using the same

A spatial light modulator for changing transmittance of incident light from a light source to perform light modulation, the spatial light modulator comprising: a plane substrate transparent for the incident light; a first electrode being provided on the plane substrate; a deformable member being provided above the plane substrate and containing a second electrode placed with a gap above said first electrode, the deformable member deforming in response to an electrostatic force occurring as voltage is applied to said first electrode and the second electrode; and an optical function film being formed on the deformable member, wherein the optical function film has incidence angle dependency that the transmittance of the incident light changes in response to an incidence angle of the incident light on the optical function film, and is inclinable relative to the plane substrate in response to the electrostatic force.

Spatial light modulator, spatial light modulator array, and image formation apparatus

A spatial light modulator has: a support substrate that has an electrode layer; and a movable thin film that has at least an electrode layer, and that is opposingly placed above the support substrate with being separated by a predetermined gap distance in a manner that the movable thin film is flexurally deformable toward the support substrate, and in which a predetermined driving voltage is applied between the electrode layer of the support substrate and the electrode layer of the movable thin film to cause the movable thin film to be deflected toward the support substrate by an electrostatic force acting between the electrode layers. A returning electrode is disposed on an side of the movable thin film opposite to the side which is opposed to the support substrate to apply an electrostatic force of attracting the movable thin film when a driving voltage is applied.

Spatial light modulator, spatial light modulator array, image forming device and flat panel display

A flat plate collimator and backlight system capable of improving the display characteristics of liquid crystal display devices are obtained. In order to achieve this end, a collimator is provided which comprises a cholesteric liquid crystal layer exhibiting a selective-reflection wavelength band with respect to perpendicularly-incident light in the wavelength range &lgr; to &lgr; (&lgr; <&lgr; ), and which satisfies the relation &lgr; <&lgr; with respect to the maximum-emission wavelength &lgr; in the emission spectrum of the light source with which the collimator is used in combination, and a backlight system employing this collimator and light source is provided.

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Kanagawa, Japan

Fumihiko Mochizuki