Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Fumihiko Koga

Tetsuji Yamaguchi

Taiichiro Watanabe

Hideaki Togashi

Shintarou Hirata

Keisuke Hatano

Ryosuke Nakamura

Keiji Tatani

Takashi Nagano

Yoshihiro Ando

Toshifumi Wakano

Yukio Kaneda

Shinichiro Izawa

Yusuke Sato

Nobuhiro Kawai

Yuji Uesugi

Hiroyuki Mori

Kenichi Murata

Masahiro Joei

Takuji Matsumoto

Yoshiharu Kudoh

Takeshi Yanagita

Yosuke Saito

Sozo Yokogawa

Hayato Wakabayashi

Yoshiki Ebiko

Iwao Yagi

Toyotaka Kataoka

Yuhi Yorikado

Satoshi Keino

Akira Furukawa

Keiji Mabuchi

Takashi Abe

Ryoji Suzuki

Nobuo Nakamura

Yorito Sakano

Kazunobu Ota

Kazuichiro Itonaga

Yasushi Tateshita

Kyosuke Ito

Shuji Manda

Suzunori Endo

Keiichi Nakazawa

Shinpei Fukuoka

Susumu Ooki

Naoyuki Miyashita

Norihiro Kubo

Yutaka Nishimura

Takahiro Toyoshima

Shingo Takahashi

Yoshihiko Nagahama

Yusaku Sugimori

Yusuke Moriyama

Yasuhisa Tochigi

Provided is a solid-state imaging device that includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

Solid-state imaging device and method of controlling solid-state imaging device

Provided is a solid-state image capturing element including a semiconductor substrate and first and second photoelectric conversion parts configured to convert light into electric charge. The first and the second photoelectric conversion parts each have a laminated structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film. The lower electrode of each of the first and the second photoelectric conversion parts is electrically connected with a common electric charge accumulation part through a common penetration electrode provided in common to the first and the second photoelectric conversion parts and penetrating through the semiconductor substrate, the common electric charge accumulation part being provided in common to the first and the second photoelectric conversion parts in the semiconductor substrate.

Solid-state image capturing element, solid-state image capturing device, and solid-state image capturing element reading method

There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.

Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus

An imaging element includes a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrodethat are stacked, in which the photoelectric conversion unit further includes a charge storage electrodearranged apart from the first electrodeand arranged to face the photoelectric conversion layerthrough an insulating layer, and when photoelectric conversion occurs in the photoelectric conversion layerafter light enters the photoelectric conversion layer, an absolute value of a potential applied to a partof the photoelectric conversion layerfacing the charge storage electrodeis a value larger than an absolute value of a potential applied to a regionof the photoelectric conversion layerpositioned between the imaging element and an adjacent imaging element.

Imaging element, stacked imaging element, and solid-state imaging apparatus

A light receiving element including: a semiconductor substrate; a photoelectric conversion unit (PD) in the semiconductor substrate that converts light into electric charges; a first electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; a first distribution gate on a front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the first electric charge accumulation unit; a second electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; and a second distribution gate on the front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the second electric charge accumulation unit, in which the first and second distribution gates each have a pair of buried gate portions.

Light receiving element and light receiving device

To provide a light receiving element including: a photoelectric conversion unit (PD) that is provided in a semiconductor substrate and converts light into a charge; a first charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit; a second charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit, in which each of the first and second charge accumulation units includes a stack of an electrode, a first insulating layer, and a semiconductor layer.

Light receiving element and light receiving apparatus

Provided are a light receiving element and an electronic apparatus that prevent generation of a false signal due to light emission caused by a circuit. The light receiving element includes a plurality of pixels. Each of the plurality of pixels includes: a photoelectric conversion layer that photoelectrically converts incident light; a signal reading circuit including an in-pixel transistor that is provided on a side opposite to a light incident side surface of the photoelectric conversion layer, amplifies signal charge generated by the photoelectric conversion layer, and reads the signal charge out of a pixel array; and a metal junction that bonds the photoelectric conversion layer and the signal reading circuit. The metal junction covers the in-pixel transistor when viewed from the light incident side surface of the photoelectric conversion layer.

Light receiving element and electronic apparatus

Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nphotoelectric conversion unit segment is formed of an ncharge storage electrode segment, an ninsulating layer segment and an nphotoelectric conversion layer segment. As n increases, the nphotoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nphotoelectric conversion unit segment.

Imaging element, stacked-type imaging element and solid-state imaging apparatus

A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.

Solid-state imaging device and method for manufacturing solid-state imaging device, and electronic device

An image processor according to the present disclosure includes: an image segmentation processing section to generate a plurality of first map data on the basis of first image map data including a plurality of pixel values, the plurality of first map data having arrangement patterns of pixel values different from each other and including pixel values located at positions different from each other; an interpolation processing section to generate a plurality of second map data by determining a pixel value at a position where no pixel value is present in each of the plurality of first map data with use of interpolation processing; and a synthesis processing section to generate third map data by generating, on the basis of pixel values at positions corresponding to each other in the plurality of second map data, a pixel value at a position corresponding to the positions.

Image processor, image processing method, and imaging device

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Solid-state imaging device, method for driving the same, and electronic device for improved auto-focusing accuracy

There is provided an imaging element includes a photoelectric conversion unit that includes a first electrode, a photoelectric conversion layer, and a second electrode, in which the photoelectric conversion unit further includes a charge storage electrode that has an opposite region opposite to the first electrode via an insulating layer, and a transfer control electrode that is opposite to the first electrode and the charge storage electrode via the insulating layer, and the photoelectric conversion layer is disposed above at least the charge storage electrode via the insulating layer.

Imaging element, stacked-type imaging element, and solid-state imaging apparatus

The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.

Solid-state imaging device, method of driving the same, and electronic apparatus

An imaging element has at least a photoelectric conversion section, a first transistor TR, and a second transistor TR, the photoelectric conversion section includes a photoelectric conversion layer, a first electrode, and a second electrode, the imaging element further has a first photoelectric conversion layer extension sectionA, a third electrode, and a fourth electrodeC, the first transistor TRincludes the second electrodethat functions as one source/drain section, the third electrode that functions as a gate section, and the first photoelectric conversion layer extension sectionA that functions as the other source/drain section, and the first transistor TR(TR) is provided adjacent to the photoelectric conversion section.

Imaging element, stacked imaging element, and solid-state imaging device

An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

Imaging device and solid-state image sensor

Growing community of inventors

Kanagawa, Japan

Fumihiko Koga