Hitachi, Ltd.

Fumihiko Ishida

Norio Ohta

Yutaka Sugita

Keikichi Ando

Tadashi Ikeda

Yuzuru Hosoe

Norio Ota

The invention relates to a garnet film for an ion-implanted device characterized in that the quantity of Fe is increased and a predetermined quantity of Gd is added. The garnet film of the invention has a sufficiently high Curie temperature without sacrificing its other properties and hence is extremely suitable as a garnet film for an ion-implanted device.

Garnet film for ion-implanted magnetic bubble device

A magnetic garnet film for a magnetic bubble memory device in which parts of rare earth element and iron are replaced by predetermined quantities of Gd and Ge, respectively. The garnet film exhibits very small temperature-dependency of the bubble collapse field as well as high Curie temperature, whereby magnetic bubbles of very small diameter can be sustained and controlled with stability over a wide temperature range.

Garnet film for magnetic bubble device

A garnet film for a magnetic bubble domain device which comprises a predetermined quantity of Gd and a predetermined quantity of Ga. The garnet film has a temperature coefficient of not more than 0.2%/.degree.C. in respect of the bubble collapse field owing to the addition of Gd and Ga and is suitable for substaining small magnetic bubbles of a diameter of less than 2.5 .mu.m.

Film for a magnetic bubble domain device

A garnet single crystal film wherein part of iron ions at tetrahedral positions and octahedral positions are replaced by an appointed amount of the other ions is by far superior to prior art garnet films in that its saturation magnetization (4.pi.Ms) and its exchange stiffness coefficient (A) can be independently controlled to a desired value and a magnetic bubble domain having a small diameter can be easily formed.

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Hachioji, Japan

Fumihiko Ishida